JPS6417470A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6417470A JPS6417470A JP17283987A JP17283987A JPS6417470A JP S6417470 A JPS6417470 A JP S6417470A JP 17283987 A JP17283987 A JP 17283987A JP 17283987 A JP17283987 A JP 17283987A JP S6417470 A JPS6417470 A JP S6417470A
- Authority
- JP
- Japan
- Prior art keywords
- titanium
- layer
- atoms
- silicon layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17283987A JPS6417470A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17283987A JPS6417470A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417470A true JPS6417470A (en) | 1989-01-20 |
Family
ID=15949290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17283987A Pending JPS6417470A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417470A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6774023B1 (en) * | 1992-05-30 | 2004-08-10 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide |
-
1987
- 1987-07-13 JP JP17283987A patent/JPS6417470A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6774023B1 (en) * | 1992-05-30 | 2004-08-10 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR950004410A (ko) | 반도체장치의 게이트형성방법 | |
JPS54116184A (en) | Manufacture for semiconductor device | |
JPS6417470A (en) | Semiconductor device | |
EP0124960A3 (en) | Semiconductor devices comprising silicides | |
JP3095452B2 (ja) | 半導体素子の製造方法 | |
JPH0319370A (ja) | 半導体装置 | |
JPS6417471A (en) | Semiconductor device | |
JPS5766671A (en) | Semiconductor device | |
JPS6441245A (en) | Manufacture of semiconductor device | |
JPS5687364A (en) | Semiconductor device | |
JPS6465875A (en) | Thin film transistor and manufacture thereof | |
KR100566310B1 (ko) | 반도체 소자의 금속 콘택 형성방법 | |
JPH01238144A (ja) | 半導体装置の製造方法 | |
KR960008567B1 (ko) | 실리사이드막 형성방법 | |
JPH0273669A (ja) | 半導体装置 | |
JPS57102052A (en) | Manufacture of semiconductor device | |
KR100256803B1 (ko) | 반도체 소자의 얇은 접합 형성방법 | |
JPS55107258A (en) | Electrode construction for semiconductor element | |
JPS6428842A (en) | Semiconductor device and manufacture thereof | |
JPS54134579A (en) | Mis semiconductor device | |
JPS63141360A (ja) | 半導体装置 | |
JPS56133869A (en) | Mos type semiconductor device and manufacture thereof | |
JPS5673453A (en) | Semiconductor device | |
JPS57117256A (en) | Semiconductor device | |
KR900010931A (ko) | 콘택부위의 불순물 확산방지방법 |