JPS6411378A - Formation of josephson element - Google Patents

Formation of josephson element

Info

Publication number
JPS6411378A
JPS6411378A JP62166788A JP16678887A JPS6411378A JP S6411378 A JPS6411378 A JP S6411378A JP 62166788 A JP62166788 A JP 62166788A JP 16678887 A JP16678887 A JP 16678887A JP S6411378 A JPS6411378 A JP S6411378A
Authority
JP
Japan
Prior art keywords
josephson element
insulating layer
yttrium
barium
argon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62166788A
Other languages
English (en)
Inventor
Yukio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62166788A priority Critical patent/JPS6411378A/ja
Publication of JPS6411378A publication Critical patent/JPS6411378A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—After-treatment, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP62166788A 1987-07-06 1987-07-06 Formation of josephson element Pending JPS6411378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166788A JPS6411378A (en) 1987-07-06 1987-07-06 Formation of josephson element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166788A JPS6411378A (en) 1987-07-06 1987-07-06 Formation of josephson element

Publications (1)

Publication Number Publication Date
JPS6411378A true JPS6411378A (en) 1989-01-13

Family

ID=15837686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166788A Pending JPS6411378A (en) 1987-07-06 1987-07-06 Formation of josephson element

Country Status (1)

Country Link
JP (1) JPS6411378A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269981A (ja) * 1988-09-05 1990-03-08 Matsushita Electric Ind Co Ltd ジョセフソン素子の製造方法
EP0390704A2 (en) * 1989-03-31 1990-10-03 Sumitomo Electric Industries, Ltd. Tunnel junction type Josephson device and method for fabricating the same
EP0543585A2 (en) * 1991-11-15 1993-05-26 The Hokkaido Electric Power Company Inc. Process for forming an oxide film
US5367178A (en) * 1991-01-22 1994-11-22 Biomagnetic Technologies, Inc. High-TC microbridge superconductor device utilizing stepped edge-to-edge SNS junction
US5747427A (en) * 1991-11-15 1998-05-05 Hokkaido Electric Power Co., Inc. Process for forming a semiconductive thin film containing a junction
DE10122697A1 (de) * 2001-05-10 2002-09-26 Siemens Ag Schnurloser TV Internet Zugang

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269981A (ja) * 1988-09-05 1990-03-08 Matsushita Electric Ind Co Ltd ジョセフソン素子の製造方法
EP0390704A2 (en) * 1989-03-31 1990-10-03 Sumitomo Electric Industries, Ltd. Tunnel junction type Josephson device and method for fabricating the same
US5367178A (en) * 1991-01-22 1994-11-22 Biomagnetic Technologies, Inc. High-TC microbridge superconductor device utilizing stepped edge-to-edge SNS junction
EP0543585A2 (en) * 1991-11-15 1993-05-26 The Hokkaido Electric Power Company Inc. Process for forming an oxide film
EP0543585B1 (en) * 1991-11-15 1997-04-16 The Hokkaido Electric Power Company Inc. Process for forming an oxide film
US5747427A (en) * 1991-11-15 1998-05-05 Hokkaido Electric Power Co., Inc. Process for forming a semiconductive thin film containing a junction
DE10122697A1 (de) * 2001-05-10 2002-09-26 Siemens Ag Schnurloser TV Internet Zugang

Similar Documents

Publication Publication Date Title
JPS6486574A (en) Superconducting device
JPS6414814A (en) Manufacture of oxide superconductive thin film
JPS6451685A (en) Formation of superconducting circuit
JPS6411378A (en) Formation of josephson element
JPS6430117A (en) Formation of ceramic superconductor membrane
JPS6464379A (en) Superconducting transistor and its manufacture
JPS5629383A (en) Manufacture of tunnel-junction type josephson element
JP2540185B2 (ja) 半導体装置
JPS57126185A (en) Manufacture of josephson element
JPS6453474A (en) Superconducting transistor
JPS6463215A (en) High temperature superconductive material
KR910020957A (ko) 산화물 초전도체를 이용한 초전도 접합 형성 방법
JPH01150375A (ja) ジョセフソン素子の製造方法
JPS6455846A (en) Semiconductor device
JP2748522B2 (ja) 高温超伝導薄膜の製造方法
JPS6452327A (en) Superconductive material
JPS6459974A (en) Device for manufacturing superconducting material
JPS558036A (en) Electrode formation
JPS6450313A (en) Superconductor device
JPS6459973A (en) Manufacture of superconducting material
JPS6412430A (en) Manufacture of oxide superconductor
JPS6435971A (en) Superconductor device
JPS646322A (en) Thin film superconductor
JPS6452340A (en) Manufacture of superconductive fine wire
Musatenko et al. Interaction of YBa sub 2 Cu sub 3 O sub 7--x Ceramics With Substrates of SrTiO sub 3, MgO, and ZrO sub 2 at 1170-1470 K