JPS6363737U - - Google Patents
Info
- Publication number
- JPS6363737U JPS6363737U JP15792786U JP15792786U JPS6363737U JP S6363737 U JPS6363737 U JP S6363737U JP 15792786 U JP15792786 U JP 15792786U JP 15792786 U JP15792786 U JP 15792786U JP S6363737 U JPS6363737 U JP S6363737U
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- semiconductor substrate
- semiconductor
- diaphragm
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は従来より一般に使用されている従来例の構成
説明図、第３図は従来より一般に使用されている
他の構成説明図、第４図は従来より一般に使用さ
れている別の従来例の構成説明図である。
１……センサチツプ、１１……ダイアフラム部
、１２……導圧室、２……ピエゾ抵抗ゲージ、３
……半導体基板、７……接合層。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
The figure is an explanatory diagram of the configuration of a conventional example commonly used in the past, FIG. 3 is an explanatory diagram of another configuration commonly used in the past, and FIG. 4 is the configuration of another conventional example commonly used in the past. It is an explanatory diagram. DESCRIPTION OF SYMBOLS 1...Sensor chip, 11...Diaphragm part, 12...Pressure chamber, 2...Piezo resistance gauge, 3
... Semiconductor substrate, 7... Bonding layer.
Claims (1)
プに設けられダイアフラムを形成する凹部と、前
記ダイアフラムに設けられたピエゾ抵抗ゲージと
、前記センサチツプに取付けられ前記凹部と導圧
室を構成する半導体基板と、該半導体基板上に１
０μｍ以下の厚さにスパツタで形成された低融点
ガラスよりなりガラスの融点以上で該半導体基板
と前記センサチツプとを接合する接合層とを具備
してなる半導体圧力センサ。 A sensor chip made of a semiconductor, a recess provided on the sensor chip and forming a diaphragm, a piezoresistance gauge provided on the diaphragm, a semiconductor substrate attached to the sensor chip and forming a pressure chamber with the recess, and the semiconductor substrate. 1 on top
A semiconductor pressure sensor comprising: a bonding layer made of low melting point glass sputtered to a thickness of 0 μm or less and bonding the semiconductor substrate and the sensor chip at a temperature above the melting point of the glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15792786U JPS6363737U (en) | 1986-10-15 | 1986-10-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15792786U JPS6363737U (en) | 1986-10-15 | 1986-10-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6363737U true JPS6363737U (en) | 1988-04-27 |
Family
ID=31080931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15792786U Pending JPS6363737U (en) | 1986-10-15 | 1986-10-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6363737U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535981A (en) * | 1976-07-06 | 1978-01-19 | Toyoda Chuo Kenkyusho Kk | Method of producing semiconductor device |
| JPS53125880A (en) * | 1977-04-08 | 1978-11-02 | Toyoda Chuo Kenkyusho Kk | Pressure converter |
| JPS61230382A (en) * | 1985-04-05 | 1986-10-14 | Yokogawa Electric Corp | Semiconductor pressure sensor |
-
1986
- 1986-10-15 JP JP15792786U patent/JPS6363737U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535981A (en) * | 1976-07-06 | 1978-01-19 | Toyoda Chuo Kenkyusho Kk | Method of producing semiconductor device |
| JPS53125880A (en) * | 1977-04-08 | 1978-11-02 | Toyoda Chuo Kenkyusho Kk | Pressure converter |
| JPS61230382A (en) * | 1985-04-05 | 1986-10-14 | Yokogawa Electric Corp | Semiconductor pressure sensor |