JPS6447062U - - Google Patents
Info
- Publication number
- JPS6447062U JPS6447062U JP14118487U JP14118487U JPS6447062U JP S6447062 U JPS6447062 U JP S6447062U JP 14118487 U JP14118487 U JP 14118487U JP 14118487 U JP14118487 U JP 14118487U JP S6447062 U JPS6447062 U JP S6447062U
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- semiconductor
- sensor
- outer shape
- bonding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の１実施例を説明する構成図、
第２図は本考案の第２の実施例を説明する構成図
、第３図は従来の半導体圧力センサの構成を示す
構成図である。
１０，１８…センサチツプ、１１…凹部、１２
，１９…ダイヤフラム、１３…ゲージ、１４…基
板、１６，１７，２０…ガラス接合層。
FIG. 1 is a configuration diagram illustrating one embodiment of the present invention,
FIG. 2 is a configuration diagram illustrating a second embodiment of the present invention, and FIG. 3 is a configuration diagram showing the configuration of a conventional semiconductor pressure sensor. 10, 18...sensor chip, 11...recess, 12
, 19...Diaphragm, 13...Gauge, 14...Substrate, 16, 17, 20...Glass bonding layer.
Claims (1)
ラム部に測定圧力に対応して抵抗値が変化するゲ
ージが形成された半導体のセンサチツプと、この
センサチツプと同一の結晶面で同一の結晶軸を有
する半導体の基板と、前記センサチツプとこの基
板とを接合する薄いガラス接合層とを有する半導
体圧力センサにおいて、前記ガラス接合層の外形
形状が前記ダイヤフラムの外形形状と相似である
ことを特徴とする半導体圧力センサ。 A semiconductor sensor chip has a thin diaphragm formed by forming a recess on the back side and a gauge whose resistance value changes in response to the measured pressure, and a semiconductor sensor chip that has the same crystal plane and the same crystal axis as this sensor chip. A semiconductor pressure sensor comprising a semiconductor substrate and a thin glass bonding layer for bonding the sensor chip and the substrate, characterized in that the outer shape of the glass bonding layer is similar to the outer shape of the diaphragm. sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14118487U JPS6447062U (en) | 1987-09-16 | 1987-09-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14118487U JPS6447062U (en) | 1987-09-16 | 1987-09-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6447062U true JPS6447062U (en) | 1989-03-23 |
Family
ID=31406031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14118487U Pending JPS6447062U (en) | 1987-09-16 | 1987-09-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6447062U (en) |
-
1987
- 1987-09-16 JP JP14118487U patent/JPS6447062U/ja active Pending