JPH0178928U - - Google Patents
Info
- Publication number
- JPH0178928U JPH0178928U JP1987174898U JP17489887U JPH0178928U JP H0178928 U JPH0178928 U JP H0178928U JP 1987174898 U JP1987174898 U JP 1987174898U JP 17489887 U JP17489887 U JP 17489887U JP H0178928 U JPH0178928 U JP H0178928U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- chip
- metal thin
- sensor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の製作説明図、第３図は本考案の
別の実施例の要部構成説明図、第４図は本考案の
他の実施例の要部構成説明図、第５図は従来より
一般に使用されている従来例の構成説明図である
。
１……センサアセンブリ、１１……センサチツ
プ、１１１……感圧部、１１１１……薄肉起歪部
、１１１２……ゲージ、１１１３……アンプ部、
３……アンプチツプ、３１……リード、４……基
板部、４１……基板、４１１……導圧孔、４２…
…金属薄膜、４３……ガラス薄膜、５１……ガラ
ス層、５２……シリコンチツプ。
FIG. 1 is an explanatory diagram of the main part of an embodiment of the present invention.
Fig. 2 is an explanatory diagram of the production of Fig. 1, Fig. 3 is an explanatory diagram of the main part configuration of another embodiment of the present invention, Fig. 4 is an explanatory diagram of the main part composition of another embodiment of the present invention, and Fig. 5 The figure is a diagram illustrating the configuration of a conventional example that has been commonly used. DESCRIPTION OF SYMBOLS 1... Sensor assembly, 11... Sensor chip, 111... Pressure sensitive part, 1111... Thin strain generating part, 1112... Gauge, 1113... Amplifier part,
3... Amplifier chip, 31... Lead, 4... Board portion, 41... Board, 411... Pressure conductive hole, 42...
...Metal thin film, 43...Glass thin film, 51...Glass layer, 52...Silicon chip.
Claims (1)
該薄肉起歪部の表面近くに熱拡散あるいはイオン
注入により作成されたゲージとよりなる感圧部を
備える半導体からなるセンサチツプと、該センサ
チツプに近接して設けられ前記ゲージの出力信号
を増幅するアンプチツプと、該アンプチツプと前
記センサチツプと熱膨張係数が近くセラミツクス
よりなる基板と該基板の一面に設けられた金属薄
膜と該金属薄膜表面に形成されたガラス薄膜とか
らなり該ガラス薄膜を介して前記センサチツプと
前記アンプチツプとに陽極接合により接合される
基板部とを具備してなる半導体圧力センサ。 A sensor chip made of a semiconductor, comprising a thin-walled strain-generating part that generates stress in response to measurement pressure, and a pressure-sensitive part made of a gauge made by thermal diffusion or ion implantation near the surface of the thin-walled strain-generating part; an amplifier chip disposed in close proximity to amplify the output signal of the gauge; a substrate made of ceramics having a coefficient of thermal expansion close to that of the amplifier chip and the sensor chip; a metal thin film provided on one surface of the substrate; and a metal thin film formed on the surface of the metal thin film. 1. A semiconductor pressure sensor comprising: a substrate part made of a thin glass film and bonded to the sensor chip and the amplifier chip by anodic bonding via the glass thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987174898U JPH0178928U (en) | 1987-11-16 | 1987-11-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987174898U JPH0178928U (en) | 1987-11-16 | 1987-11-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0178928U true JPH0178928U (en) | 1989-05-26 |
Family
ID=31466728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987174898U Pending JPH0178928U (en) | 1987-11-16 | 1987-11-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0178928U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9463436B2 (en) | 2011-05-24 | 2016-10-11 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing microparticulate anatase or rutile titanium oxide dispersion and component having photocatalytic thin film on surface |
-
1987
- 1987-11-16 JP JP1987174898U patent/JPH0178928U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9463436B2 (en) | 2011-05-24 | 2016-10-11 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing microparticulate anatase or rutile titanium oxide dispersion and component having photocatalytic thin film on surface |