JPS61205155U - - Google Patents
Info
- Publication number
- JPS61205155U JPS61205155U JP8992185U JP8992185U JPS61205155U JP S61205155 U JPS61205155 U JP S61205155U JP 8992185 U JP8992185 U JP 8992185U JP 8992185 U JP8992185 U JP 8992185U JP S61205155 U JPS61205155 U JP S61205155U
- Authority
- JP
- Japan
- Prior art keywords
- lead
- piezo
- pressure sensor
- semiconductor substrate
- resistance layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の平面図、第３図は第１図の工程
図、第４図は本考案の他の実施例の構成説明図、
第５図は第４図の平面図、第６図は本考案の別の
実施例の構成説明図で、第７図は第６図の平面図
、第８図は第６図の動作説明図、第９図、第１０
図、第１１図、第１２図は従来より一般に使用さ
れている従来例の構成説明図で、第９図は側断面
図、第１０図は平面図、第１１図は要部詳細説明
図、第１２図は動作説明図である。
１……支持台、２……ダイアフラム、２１……
基準室、３……剪断形ゲージ、３１……パシベー
シヨン膜、３１１……酸化シリコン膜、３１２…
…窒化膜、３２……リード、３３……電極、３４
……応力緩衝層、３５……導電体部。
FIG. 1 is an explanatory diagram of the main part of an embodiment of the present invention.
FIG. 2 is a plan view of FIG. 1, FIG. 3 is a process diagram of FIG. 1, and FIG. 4 is a structural explanatory diagram of another embodiment of the present invention.
5 is a plan view of FIG. 4, FIG. 6 is an explanatory diagram of the configuration of another embodiment of the present invention, FIG. 7 is a plan view of FIG. 6, and FIG. 8 is an explanatory diagram of the operation of FIG. 6. , Figure 9, Figure 10
11 and 12 are explanatory diagrams of the configuration of a conventional example that has been generally used in the past, where FIG. 9 is a side sectional view, FIG. 10 is a plan view, and FIG. FIG. 12 is an explanatory diagram of the operation. 1...Support stand, 2...Diaphragm, 21...
Reference chamber, 3... Shear type gauge, 31... Passivation film, 311... Silicon oxide film, 312...
...Nitride film, 32...Lead, 33...Electrode, 34
... Stress buffer layer, 35 ... Conductor part.
Claims (1)
とピエゾ抵抗素子のリード取出し抵抗層が形成さ
れシリコン半導体基板表面がパシベーシヨン膜で
覆われている半導体圧力センサにおいて、前記ピ
エゾ抵抗素子と前記リード取出し抵抗層の外表面
が平坦な平面に構成されたことを特徴とする半導
体圧力センサ。 In a semiconductor pressure sensor in which a piezoresistive element and a lead-out resistance layer of the piezo-resistance element are formed on a surface portion of a silicon semiconductor substrate, and the silicon semiconductor substrate surface is covered with a passivation film, the outside of the piezo-resistance element and the lead-out resistance layer is A semiconductor pressure sensor characterized by having a flat surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8992185U JPS61205155U (en) | 1985-06-14 | 1985-06-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8992185U JPS61205155U (en) | 1985-06-14 | 1985-06-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61205155U true JPS61205155U (en) | 1986-12-24 |
Family
ID=30644454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8992185U Pending JPS61205155U (en) | 1985-06-14 | 1985-06-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61205155U (en) |
-
1985
- 1985-06-14 JP JP8992185U patent/JPS61205155U/ja active Pending