JPS63178353U - - Google Patents
Info
- Publication number
- JPS63178353U JPS63178353U JP7081587U JP7081587U JPS63178353U JP S63178353 U JPS63178353 U JP S63178353U JP 7081587 U JP7081587 U JP 7081587U JP 7081587 U JP7081587 U JP 7081587U JP S63178353 U JPS63178353 U JP S63178353U
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- silicon substrate
- measurement pressure
- pressure sensor
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の１実施例を示す構成図、第２
図は第１図に示す半導体圧力センサを作る工程を
示す工程図、第３図は従来の半導体圧力センサの
構成を示す縦断面図、第４図は第３図に示す半導
体圧力センサを作る工程を示す工程図、第５図は
第３図に示す半導体圧力センサの問題点を説明す
る説明図である。
１０，２７……ダイヤフラム、１１……凹部、
１２……起歪部、１４，２４……ゲージ、１７…
…基板、１８，２９……筐体、２１……シリコン
基板、２２……貫通孔、２３……多結晶シリコン
基板、２５，２６，３１……酸化膜、３２……多
結晶シリコン層。
Figure 1 is a configuration diagram showing one embodiment of the present invention;
The figure is a process diagram showing the process of making the semiconductor pressure sensor shown in Fig. 1, Fig. 3 is a vertical cross-sectional view showing the configuration of a conventional semiconductor pressure sensor, and Fig. 4 is the process of making the semiconductor pressure sensor shown in Fig. 3. FIG. 5 is an explanatory diagram illustrating problems with the semiconductor pressure sensor shown in FIG. 3. 10, 27...diaphragm, 11...recess,
12... Strain generating part, 14, 24... Gauge, 17...
... Substrate, 18, 29 ... Housing, 21 ... Silicon substrate, 22 ... Through hole, 23 ... Polycrystalline silicon substrate, 25, 26, 31 ... Oxide film, 32 ... Polycrystalline silicon layer.
Claims (1)
ン基板と、多結晶シリコン基板の一方の面と他方
の面に酸化膜が形成されたダイアフラムと、この
ダイアフラムの一方の酸化膜上の所定位置に形成
され前記測定圧力の印加により抵抗値が変化する
ピエゾ抵抗素子と、このダイアフラムの他方の面
と前記シリコン基板とを接合したことを特徴とす
る半導体圧力センサ。 A silicon substrate with a through hole for introducing measurement pressure, a diaphragm with an oxide film formed on one side and the other side of the polycrystalline silicon substrate, and a diaphragm formed at a predetermined position on one of the oxide films of this diaphragm. A semiconductor pressure sensor characterized in that a piezoresistive element whose resistance value changes upon application of the measurement pressure, and the other surface of the diaphragm and the silicon substrate are bonded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7081587U JPH0533018Y2 (en) | 1987-05-12 | 1987-05-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7081587U JPH0533018Y2 (en) | 1987-05-12 | 1987-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63178353U true JPS63178353U (en) | 1988-11-18 |
| JPH0533018Y2 JPH0533018Y2 (en) | 1993-08-23 |
Family
ID=30912794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7081587U Expired - Lifetime JPH0533018Y2 (en) | 1987-05-12 | 1987-05-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0533018Y2 (en) |
-
1987
- 1987-05-12 JP JP7081587U patent/JPH0533018Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533018Y2 (en) | 1993-08-23 |