JPS61162069U - - Google Patents
Info
- Publication number
- JPS61162069U JPS61162069U JP4543985U JP4543985U JPS61162069U JP S61162069 U JPS61162069 U JP S61162069U JP 4543985 U JP4543985 U JP 4543985U JP 4543985 U JP4543985 U JP 4543985U JP S61162069 U JPS61162069 U JP S61162069U
- Authority
- JP
- Japan
- Prior art keywords
- type
- gauge
- shear type
- shear
- crystal axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図、第２図、第３図は、本考案の一実施例
の構成説明図で、第１図は平面図、第２図は側面
図、第３図は要部詳細図である。
１……ダイアフラム、２……ｎ形せん断形ゲー
ジ、３……ｐ形せん断形ゲージ、４……演算回路
。
FIGS. 1, 2, and 3 are explanatory views of the configuration of an embodiment of the present invention, in which FIG. 1 is a plan view, FIG. 2 is a side view, and FIG. 3 is a detailed view of the main parts. 1...Diaphragm, 2...N-type shear type gauge, 3...P-type shear type gauge, 4...Arithmetic circuit.
Claims (1)
半導体単結晶からなるダイアフラムと、該ダイア
フラムに設けられ結晶軸が〈１１０〉方向に形成
されたｎ形せん断形ゲージと、前記ダイアフラム
に設けられ結晶軸が〈１００〉方向に形成された
ｐ形せん断形ゲージと該ｐ形せん断形ゲージの出
力と前記ｎ形せん断形ゲージの出力の差を演算す
る演算回路とを具備し、該ｐ形せん断形ゲージの
感度係数をａＰ、前記ｎ形、ｐ形せん断形ゲージ
のピエゾ抵抗係数をπｎ，πｐ、該ピエゾ抵抗係
数πｎ，πｐの温度係数をβｎ，βｐとした場合
に、前記ｎ形せん断形ゲージの感度係数ａｎをａ
ｎ＝｛（πｐ・βｐ）／（πｎ・βｎ）｝ａｐな
るように構成されてなる半導体圧力センサ。 a diaphragm made of a semiconductor single crystal that receives measurement pressure and whose crystal axis is in the (100) direction; an n-type shear type gauge provided on the diaphragm and whose crystal axis is oriented in the <110>direction; The p-type shear type gauge includes a p-type shear type gauge having a crystal axis oriented in the <100> direction, and an arithmetic circuit that calculates a difference between the output of the p-type shear type gauge and the output of the n-type shear type gauge, When the sensitivity coefficient of the shear type gauge is aP, the piezo resistance coefficients of the n-type and p-type shear type gauges are π n , π p , and the temperature coefficients of the piezo resistance coefficients π n , π p are β n , β p , the sensitivity coefficient a of the n-type shear type gauge is a
A semiconductor pressure sensor configured such that n = {(π p · β p )/(π n · β n )} a p .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4543985U JPH0526774Y2 (en) | 1985-03-28 | 1985-03-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4543985U JPH0526774Y2 (en) | 1985-03-28 | 1985-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61162069U true JPS61162069U (en) | 1986-10-07 |
| JPH0526774Y2 JPH0526774Y2 (en) | 1993-07-07 |
Family
ID=30558943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4543985U Expired - Lifetime JPH0526774Y2 (en) | 1985-03-28 | 1985-03-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526774Y2 (en) |
-
1985
- 1985-03-28 JP JP4543985U patent/JPH0526774Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526774Y2 (en) | 1993-07-07 |