JPS61199060U - - Google Patents
Info
- Publication number
- JPS61199060U JPS61199060U JP8350385U JP8350385U JPS61199060U JP S61199060 U JPS61199060 U JP S61199060U JP 8350385 U JP8350385 U JP 8350385U JP 8350385 U JP8350385 U JP 8350385U JP S61199060 U JPS61199060 U JP S61199060U
- Authority
- JP
- Japan
- Prior art keywords
- type
- gauge
- coefficients
- crystal axis
- shear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 4
- 238000005259 measurement Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第1図、第2図、第3図は、本考案の一実施例
の構成説明図で、第1図は平面図、第2図は側面
図、第3図は要部詳細図である。
1……ダイアフラム、2……n形剪断形ゲージ
、3……p形剪断形ゲージ、4……演算回路、5
……可変抵抗器、51……可変刷子。
FIGS. 1, 2, and 3 are explanatory diagrams of an embodiment of the present invention, in which FIG. 1 is a plan view, FIG. 2 is a side view, and FIG. 3 is a detailed view of the main parts. DESCRIPTION OF SYMBOLS 1...Diaphragm, 2...N-type shear type gauge, 3...P-type shear type gauge, 4...Arithmetic circuit, 5
...Variable resistor, 51...Variable brush.
Claims (1)
半導体単結晶からなるダイアフラムと、該ダイア
フラムに設けられ結晶軸が<110>方向に形成
されたn形剪断形ゲージと、前記ダイアフラムに
設けられ結晶軸が<100>方向に形成されたp
形剪断形ゲージと該p形剪断形ゲージの出力と前
記n形剪断形ゲージの出力の差を演算する演算回
路とを具備し、前記p形、n形剪断形ゲージへの
入力電流をip,in、ゲージ抵抗をRp,Rn
、感度係数をap,an、ピエゾ抵抗係数をπp
,πn、抵抗温度係数をαp,αn、該ピエゾ抵
抗係数πp,πnの温度係数をβp,βnとした
場合に、ip={Rnanπn(αn+βn)}
/{Rpapπp(αp+βp)}なるように構
成されてなる半導体圧力センサ。 a diaphragm made of a semiconductor single crystal that receives measurement pressure and whose crystal axis is in the (100) direction; an n-type shear type gauge provided on the diaphragm and whose crystal axis is oriented in the <110>direction; p whose crystal axis is in the <100> direction
the p-type shear-type gauge and an arithmetic circuit for calculating the difference between the output of the p-type shear-type gauge and the output of the n-type shear-type gauge ; , i n , gauge resistance as R p , R n
, the sensitivity coefficients are a p , a n , and the piezoresistance coefficient is π p
, π n , the resistance temperature coefficients are α p , α n , and the temperature coefficients of the piezoresistance coefficients π p , π n are β p , β n , then ip = {R n a n π n (α n +β n )}
/{R p a p π p (α p +β p )}.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8350385U JPH0526775Y2 (en) | 1985-06-03 | 1985-06-03 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8350385U JPH0526775Y2 (en) | 1985-06-03 | 1985-06-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61199060U true JPS61199060U (en) | 1986-12-12 |
JPH0526775Y2 JPH0526775Y2 (en) | 1993-07-07 |
Family
ID=30632192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8350385U Expired - Lifetime JPH0526775Y2 (en) | 1985-06-03 | 1985-06-03 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0526775Y2 (en) |
-
1985
- 1985-06-03 JP JP8350385U patent/JPH0526775Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0526775Y2 (en) | 1993-07-07 |