JPS6196347U - - Google Patents
Info
- Publication number
- JPS6196347U JPS6196347U JP18204184U JP18204184U JPS6196347U JP S6196347 U JPS6196347 U JP S6196347U JP 18204184 U JP18204184 U JP 18204184U JP 18204184 U JP18204184 U JP 18204184U JP S6196347 U JPS6196347 U JP S6196347U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- diaphragm
- pressure gauges
- semiconductor
- output voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例のセンサ部の構成を
示す構成図、第２図はせん断応力ゲージの構成を
示す構成図、第３図は不純物濃度に対する各係数
の特性を示す特性図、第４図は第１図に示すせん
断応力ゲージを用いて被測定圧力に対応した出力
電圧を得るブロツク図、第５図は本考案の他の実
施例のダイヤフラムの要部平面図、第６図は第５
図に示す垂直応力ゲージを用いて被測定圧力に対
応した出力電圧を得るブロツク図である。
１…ダイヤフラム、２…凹部、３…起歪部、４
…固定部、５…連通孔、６…基板、７…ガラス薄
膜、８，９…電源端、１０，１１…出力端、Ｇｓ
１，Ｇｓ２…せん断応力ゲージ、Ｇｖ１，Ｇｖ２
…垂直応力ゲージ、Ｐ…被測定圧力、ＰＣＣ…演
算回路、Ｖｓ…定電圧。
FIG. 1 is a configuration diagram showing the configuration of a sensor section of an embodiment of the present invention, FIG. 2 is a configuration diagram showing the configuration of a shear stress gauge, and FIG. 3 is a characteristic diagram showing the characteristics of each coefficient with respect to impurity concentration. Fig. 4 is a block diagram of obtaining an output voltage corresponding to the pressure to be measured using the shear stress gauge shown in Fig. 1, Fig. 5 is a plan view of the main part of a diaphragm of another embodiment of the present invention, and Fig. is the fifth
FIG. 2 is a block diagram of obtaining an output voltage corresponding to a measured pressure using the vertical stress gauge shown in the figure. DESCRIPTION OF SYMBOLS 1... Diaphragm, 2... Recessed part, 3... Strain-generating part, 4
... Fixed part, 5... Communication hole, 6... Substrate, 7... Glass thin film, 8, 9... Power supply end, 10, 11... Output end, Gs
1 , Gs 2 ... shear stress gauge, Gv 1 , Gv 2
...Vertical stress gauge, P...Pressure to be measured, PCC...Arithmetic circuit, Vs ...Constant voltage.
Claims (1)
フラムに印加される被測定圧力を検出する半導体
圧力変換器において、前記ダイヤフラムの起歪部
上に形成された不純物濃度の異なる少くとも２個
の圧力ゲージと、前記圧力ゲージを定電圧で駆動
したときの前記圧力ゲージの出力電圧Ｅ１および
Ｅ２の任意の圧力印加の状態での基準温度におけ
る前記各圧力ゲージの出力の比ｂと前記各圧力ゲ
ージのピエゾ抵抗係数の温度係数の比ａとを用い
てＥ０＝（Ｅ２−ａｂＥ１）／（１−ａ）なる出
力電圧Ｅ０を演算する演算手段とを具備し、前記
被測定圧力に対応した出力電圧を出力することを
特徴とした半導体圧力変換器。 In a semiconductor pressure transducer having a semiconductor single crystal diaphragm and detecting a measured pressure applied to the diaphragm, at least two pressure gauges having different impurity concentrations formed on a strain-generating portion of the diaphragm; Ratio b of the output voltages of the pressure gauges E1 and E2 when the pressure gauges are driven with a constant voltage at a reference temperature under any pressure application state and the piezoelectricity of each of the pressure gauges. a calculation means for calculating an output voltage E 0 of E 0 =(E 2 -abE 1 )/(1-a) using the ratio a of the temperature coefficient of the resistance coefficient; A semiconductor pressure transducer characterized by outputting an output voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18204184U JPH041472Y2 (en) | 1984-11-30 | 1984-11-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18204184U JPH041472Y2 (en) | 1984-11-30 | 1984-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6196347U true JPS6196347U (en) | 1986-06-20 |
| JPH041472Y2 JPH041472Y2 (en) | 1992-01-20 |
Family
ID=30739577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18204184U Expired JPH041472Y2 (en) | 1984-11-30 | 1984-11-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH041472Y2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013205403A (en) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | Pressure sensor and microphone |
| JP2015064375A (en) * | 2014-12-04 | 2015-04-09 | 株式会社東芝 | Pressure sensor and microphone |
| JP2017058340A (en) * | 2015-09-18 | 2017-03-23 | Smc株式会社 | Pressure sensor and method for manufacturing the same |
| US10067021B2 (en) | 2015-09-18 | 2018-09-04 | Smc Corporation | Pressure sensor having resistive bodies |
-
1984
- 1984-11-30 JP JP18204184U patent/JPH041472Y2/ja not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013205403A (en) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | Pressure sensor and microphone |
| US9759618B2 (en) | 2012-03-29 | 2017-09-12 | Kabushiki Kaisha Toshiba | Pressure sensor and microphone |
| US10082430B2 (en) | 2012-03-29 | 2018-09-25 | Kabushiki Kaisha Toshiba | Pressure sensor and microphone |
| JP2015064375A (en) * | 2014-12-04 | 2015-04-09 | 株式会社東芝 | Pressure sensor and microphone |
| JP2017058340A (en) * | 2015-09-18 | 2017-03-23 | Smc株式会社 | Pressure sensor and method for manufacturing the same |
| US10048147B2 (en) | 2015-09-18 | 2018-08-14 | Smc Corporation | Pressure sensor including a thin-film diaphragm provided with plural resistive bodies printed in a straight line and manufacturing method therefor |
| US10067021B2 (en) | 2015-09-18 | 2018-09-04 | Smc Corporation | Pressure sensor having resistive bodies |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH041472Y2 (en) | 1992-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5289721A (en) | Semiconductor pressure sensor | |
| JPH0634455A (en) | Force conversion element and pressure detection circuit using same | |
| JPS6196347U (en) | ||
| JPH0526774Y2 (en) | ||
| JPH0533017Y2 (en) | ||
| JPH0438273Y2 (en) | ||
| RU2818501C1 (en) | Integral pressure transducer | |
| JPH0526775Y2 (en) | ||
| JPS63124638U (en) | ||
| JPH0511479Y2 (en) | ||
| JPS6398665U (en) | ||
| SU1580190A1 (en) | Integrated pressure transducer | |
| JPH0269745U (en) | ||
| JPS6410664U (en) | ||
| JPH02254764A (en) | Silicon pressure sensor | |
| JPS6398666U (en) | ||
| JPH0514186Y2 (en) | ||
| JPH0786617A (en) | Semiconductor pressure sensor | |
| JPH043243Y2 (en) | ||
| JPS62162854U (en) | ||
| JPS61205155U (en) | ||
| JPS60183456U (en) | pressure sensor | |
| JPH0834315B2 (en) | Semiconductor pressure sensor | |
| JPS6166958U (en) | ||
| JPH0213753U (en) |