JPS62162854U - - Google Patents
Info
- Publication number
- JPS62162854U JPS62162854U JP5004486U JP5004486U JPS62162854U JP S62162854 U JPS62162854 U JP S62162854U JP 5004486 U JP5004486 U JP 5004486U JP 5004486 U JP5004486 U JP 5004486U JP S62162854 U JPS62162854 U JP S62162854U
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- semiconductor
- pressure sensor
- type gauge
- stress generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Description
第１図は本考案の一実施例を示す構成図、第２
図は第１図に示す剪断形ゲージを作る工程を示す
工程図、第３図は従来の半導体圧力センサの構成
を示す構成図である。
１０，２４……ダイヤフラム、１２，２６……
起歪部、１３，２７……固定部、１７，２８……
剪断形ゲージ、１９，２０……電源端、２２，２
３……出力端、２９……ｎ＋埋込層、３０……エ
ピタキシヤル層、３２，３４，３９……熱酸化膜
、３３，３６，３８……ｐ＋低抵抗リード、３５
……ポリシリコン、３７……ｎ＋低抵抗リード。
Fig. 1 is a configuration diagram showing one embodiment of the present invention;
The figure is a process diagram showing the process of making the shear type gauge shown in FIG. 1, and FIG. 3 is a configuration diagram showing the configuration of a conventional semiconductor pressure sensor. 10,24...Diaphragm, 12,26...
Strain part, 13, 27... Fixed part, 17, 28...
Shear type gauge, 19, 20...Power supply end, 22, 2
3... Output end, 29... n + buried layer, 30... epitaxial layer, 32, 34, 39... thermal oxide film, 33, 36, 38... p + low resistance lead, 35
...Polysilicon, 37...n + low resistance lead.
Claims (1)
のダイヤフラムの変形により生ずる剪断応力に応
答する剪断形ゲージを有する半導体圧力センサに
おいて、前記剪断形ゲージを前記ダイヤフラムの
厚さ方向に生ずる剪断応力に対して最大感度を有
するように配置したことを特徴とする半導体圧力
センサ。 In a semiconductor pressure sensor having a shear type gauge that responds to shear stress generated by a measurement pressure applied to a semiconductor diaphragm and deformation of the diaphragm, the shear type gauge has maximum sensitivity to the shear stress generated in the thickness direction of the diaphragm. A semiconductor pressure sensor characterized in that it is arranged so as to have.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5004486U JPS62162854U (en) | 1986-04-03 | 1986-04-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5004486U JPS62162854U (en) | 1986-04-03 | 1986-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62162854U true JPS62162854U (en) | 1987-10-16 |
Family
ID=30873036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5004486U Pending JPS62162854U (en) | 1986-04-03 | 1986-04-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62162854U (en) |
-
1986
- 1986-04-03 JP JP5004486U patent/JPS62162854U/ja active Pending