JPS61192460U - - Google Patents
Info
- Publication number
- JPS61192460U JPS61192460U JP7584585U JP7584585U JPS61192460U JP S61192460 U JPS61192460 U JP S61192460U JP 7584585 U JP7584585 U JP 7584585U JP 7584585 U JP7584585 U JP 7584585U JP S61192460 U JPS61192460 U JP S61192460U
- Authority
- JP
- Japan
- Prior art keywords
- covered
- pressure sensor
- piezoresistive element
- silicon
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の平面図、第３図は第１図の工程
図、第４図は本考案の他の実施例の要部構成説明
図、第５図は本考案の別の実施例の要部構成説明
図、第６図は従来より一般に使用されている従来
例の構成説明図、第７図は第６図の平面図、第８
図は第６図の要部詳細図である。
１…支持台、２…ダイアフラム、２１…基準室
、３…剪断形ゲージ、３１…パシベーシヨン膜、
３１１…酸化シリコン膜、３１２…窒化膜、３１
３…ＰＳＧ膜、３１４…コンタクト穴、３１５…
ポリシリコン膜、３２…電極、３３…低抵抗層。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
Fig. 2 is a plan view of Fig. 1, Fig. 3 is a process diagram of Fig. 1, Fig. 4 is an explanatory diagram of the main part configuration of another embodiment of the present invention, and Fig. 5 is another embodiment of the present invention. FIG. 6 is an explanatory diagram of the configuration of the main part of the example, FIG. 6 is an explanatory diagram of the configuration of the conventional example commonly used, FIG.
The figure is a detailed view of the main part of FIG. 6. DESCRIPTION OF SYMBOLS 1... Support stand, 2... Diaphragm, 21... Reference chamber, 3... Shear type gauge, 31... Passivation membrane,
311...Silicon oxide film, 312...Nitride film, 31
3...PSG film, 314...contact hole, 315...
Polysilicon film, 32...electrode, 33...low resistance layer.
Claims (1)
れ外表面が酸化シリコン膜で覆われた半導体圧力
センサにおいて、前記ピエゾ抵抗素子が設けられ
ている側の前記シリコン半導体表面がＰＳＧ膜で
覆われたことを特徴とする半導体圧力センサ。 A semiconductor pressure sensor in which a piezoresistive element is formed on a silicon semiconductor substrate and the outer surface is covered with a silicon oxide film, characterized in that the silicon semiconductor surface on the side where the piezoresistive element is provided is covered with a PSG film. Semiconductor pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7584585U JPS61192460U (en) | 1985-05-22 | 1985-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7584585U JPS61192460U (en) | 1985-05-22 | 1985-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61192460U true JPS61192460U (en) | 1986-11-29 |
Family
ID=30617443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7584585U Pending JPS61192460U (en) | 1985-05-22 | 1985-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61192460U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001281085A (en) * | 2000-03-28 | 2001-10-10 | Toyoda Mach Works Ltd | Semiconductor, pressure sensor and manufacturing method thereof |
-
1985
- 1985-05-22 JP JP7584585U patent/JPS61192460U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001281085A (en) * | 2000-03-28 | 2001-10-10 | Toyoda Mach Works Ltd | Semiconductor, pressure sensor and manufacturing method thereof |