JPS62197036U - - Google Patents
Info
- Publication number
- JPS62197036U JPS62197036U JP8644386U JP8644386U JPS62197036U JP S62197036 U JPS62197036 U JP S62197036U JP 8644386 U JP8644386 U JP 8644386U JP 8644386 U JP8644386 U JP 8644386U JP S62197036 U JPS62197036 U JP S62197036U
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- silicon
- hole
- pressure
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 claims 4
- 239000000463 material Substances 0.000 claims 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第1図は本考案の一実施例を示すもので、イは
第1のシリコンウエハの平面図、ロは第2のシリ
コンウエハの平面図、ハはイとロを接合し圧力セ
ンサを構成した断面図、第2図は他の実施例を示
す断面図イおよびX視図ロ、第3図イ,ロ、第4
図イ,ロは従来例を示す図である。
1……第1のシリコンウエハ、2……第2のシ
リコンウエハ、3……穴、4……ダイアフラム、
5……導圧溝、6……導圧孔、8……導圧管。
Figure 1 shows an embodiment of the present invention, in which A is a plan view of the first silicon wafer, B is a plan view of the second silicon wafer, and C is a pressure sensor formed by joining A and B. 2 is a sectional view A and an X view B showing other embodiments; FIGS. 3 A and B;
Figures A and B show conventional examples. 1... First silicon wafer, 2... Second silicon wafer, 3... Hole, 4... Diaphragm,
5... Pressure guiding groove, 6... Pressure guiding hole, 8... Pressure guiding pipe.
Claims (1)
ンウエハと、前記第1のシリコンウエハと同一材
質、同一厚さを有する第2のシリコンウエハから
なり、前記第1および第2のシリコンウエハの少
なくとも一方に、前記穴に圧力を導入するための
導圧溝を備えたことを特徴とするシリコン圧力セ
ンサ。 It consists of a first silicon wafer having a diaphragm at the bottom of the hole, and a second silicon wafer having the same material and the same thickness as the first silicon wafer, and at least one of the first and second silicon wafers. . A silicon pressure sensor comprising a pressure guiding groove for introducing pressure into the hole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8644386U JPS62197036U (en) | 1986-06-06 | 1986-06-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8644386U JPS62197036U (en) | 1986-06-06 | 1986-06-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62197036U true JPS62197036U (en) | 1987-12-15 |
Family
ID=30942752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8644386U Pending JPS62197036U (en) | 1986-06-06 | 1986-06-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62197036U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005091166A (en) * | 2003-09-17 | 2005-04-07 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
JP2013512422A (en) * | 2009-11-26 | 2013-04-11 | コンチネンタル オートモーティヴ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Sensor module and method for manufacturing sensor module |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522125A (en) * | 1978-08-04 | 1980-02-16 | Hitachi Ltd | Pressure sensor |
JPS5821131A (en) * | 1981-07-29 | 1983-02-07 | Toshiba Corp | Semiconductor pressure sensor |
-
1986
- 1986-06-06 JP JP8644386U patent/JPS62197036U/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522125A (en) * | 1978-08-04 | 1980-02-16 | Hitachi Ltd | Pressure sensor |
JPS5821131A (en) * | 1981-07-29 | 1983-02-07 | Toshiba Corp | Semiconductor pressure sensor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005091166A (en) * | 2003-09-17 | 2005-04-07 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
JP2013512422A (en) * | 2009-11-26 | 2013-04-11 | コンチネンタル オートモーティヴ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Sensor module and method for manufacturing sensor module |