JPS627045U - - Google Patents

Info

Publication number
JPS627045U
JPS627045U JP9858085U JP9858085U JPS627045U JP S627045 U JPS627045 U JP S627045U JP 9858085 U JP9858085 U JP 9858085U JP 9858085 U JP9858085 U JP 9858085U JP S627045 U JPS627045 U JP S627045U
Authority
JP
Japan
Prior art keywords
pressure
semiconductor
conducting
semiconductor substrate
sensor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9858085U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9858085U priority Critical patent/JPS627045U/ja
Publication of JPS627045U publication Critical patent/JPS627045U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の構成説明図、第2
図は第1図の製作説明図、第3図は本考案の他の
実施例の構成説明図、第4図は従来より一般に使
用されている従来例の構成説明図である。 1…センサチツプ、11…ダイアフラム部、1
2…導圧室、2…ピエゾ抵抗ゲージ、5…導圧パ
イプ、7…半導体基板本体、71…ガラス薄膜、
72…半導体基板、73…導圧孔。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
The drawings are an explanatory diagram of the production of FIG. 1, FIG. 3 is an explanatory diagram of the construction of another embodiment of the present invention, and FIG. 4 is an explanatory diagram of the construction of a conventional example that has been commonly used. 1...sensor chip, 11...diaphragm part, 1
2... Pressure chamber, 2... Piezo resistance gauge, 5... Pressure guide pipe, 7... Semiconductor substrate body, 71... Glass thin film,
72...Semiconductor substrate, 73...Pressure hole.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 導圧室を有する半導体からなるセンサチツプと
、該センサチツプに取付けられ前記導圧室に圧力
を導入する導入孔を有する半導体基板本体と、前
記導圧孔に取付けられた導圧パイプとを具備する
半導体圧力センサにおいて、前記半導体基板本体
が片面にガラス薄膜が形成された少くとも二個の
半導体基板を該ガラス薄膜の一方を介して陽極接
合されることにより組み立てられたことを特徴と
する半導体圧力センサ。
A semiconductor comprising: a sensor chip made of a semiconductor having a pressure-conducting chamber; a semiconductor substrate main body having an introduction hole attached to the sensor chip for introducing pressure into the pressure-conducting chamber; and a pressure-conducting pipe attached to the pressure-conducting hole. A pressure sensor, characterized in that the semiconductor substrate body is assembled by anodic bonding of at least two semiconductor substrates each having a glass thin film formed on one side via one of the glass thin films. .
JP9858085U 1985-06-28 1985-06-28 Pending JPS627045U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9858085U JPS627045U (en) 1985-06-28 1985-06-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9858085U JPS627045U (en) 1985-06-28 1985-06-28

Publications (1)

Publication Number Publication Date
JPS627045U true JPS627045U (en) 1987-01-16

Family

ID=30966646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9858085U Pending JPS627045U (en) 1985-06-28 1985-06-28

Country Status (1)

Country Link
JP (1) JPS627045U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012002810A (en) * 2010-06-18 2012-01-05 General Electric Co <Ge> Sensor and sensor manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012002810A (en) * 2010-06-18 2012-01-05 General Electric Co <Ge> Sensor and sensor manufacturing method

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