JPH0260837U - - Google Patents

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Publication number
JPH0260837U
JPH0260837U JP14041288U JP14041288U JPH0260837U JP H0260837 U JPH0260837 U JP H0260837U JP 14041288 U JP14041288 U JP 14041288U JP 14041288 U JP14041288 U JP 14041288U JP H0260837 U JPH0260837 U JP H0260837U
Authority
JP
Japan
Prior art keywords
chamber
sensor chip
liquid contact
measurement
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14041288U
Other languages
Japanese (ja)
Other versions
JPH073310Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14041288U priority Critical patent/JPH073310Y2/en
Publication of JPH0260837U publication Critical patent/JPH0260837U/ja
Application granted granted Critical
Publication of JPH073310Y2 publication Critical patent/JPH073310Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の要部構成説明図、
第2図は第1図の要部構成説明図、第3図乃至第
5図は第1図の動作説明図、第6図に本半導体差
圧測定装置を自動校正出来るように構成する場合
の一システム例、第7図は従来より一般に使用さ
れている従来例の構成説明図である。 1……センサチツプ、11……凹部、12……
ダイアフラム、13……半導体歪みゲージ、2…
…基板、21……第1測定室、22……貫通孔、
3……パイプ、4……ベース、5……ボデイ、5
1……第2測定室、52……凹部、53……連通
孔、6……接液ダイアフラム、61……接液室、
62……カバー、81……内部空所、82……圧
電ダイアフラム、83……連結孔、84……封入
液、91……本半導体差圧測定装置、92……圧
電ダイアフラム駆動部、93……圧力変換部、9
4……制御部。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
Fig. 2 is an explanatory diagram of the main part configuration of Fig. 1, Figs. 3 to 5 are explanatory diagrams of the operation of Fig. 1, and Fig. 6 is an illustration of the configuration of this semiconductor differential pressure measuring device so as to enable automatic calibration. One system example, FIG. 7, is a diagram illustrating the configuration of a conventional system that has been commonly used. 1...sensor chip, 11...recess, 12...
Diaphragm, 13...Semiconductor strain gauge, 2...
...Substrate, 21...First measurement chamber, 22...Through hole,
3...Pipe, 4...Base, 5...Body, 5
1... Second measurement chamber, 52... Recess, 53... Communication hole, 6... Wetted diaphragm, 61... Wetted chamber,
62...Cover, 81...Internal cavity, 82...Piezoelectric diaphragm, 83...Connecting hole, 84...Sealed liquid, 91...Semiconductor differential pressure measuring device, 92...Piezoelectric diaphragm drive unit, 93... ...Pressure converter, 9
4...Control unit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体よりなるセンサチツプと、該センサチツ
プに設けられセンサチツプにダイアフラムを形成
する凹部と、前記ダイアフラムに設けられた半導
体歪みゲージと、前記センサチツプに一面が固定
され前記凹部と第1測定室を構成する基板と、該
基板を貫通し前記第1測定室に連通する貫通孔と
、前記基板の他面に一端が接続され前記貫通孔と
連通し他端から一方の測定圧が導入されるパイプ
と、該パイプが固定されるベースと、該ベースに
一端が固定され該ベースと前記センサチツプと第
2測定室を構成するボデイと、該ボデイの他端に
設けられた凹部と、前記ボデイに設けられ該凹部
と接液室を構成し他方の測定圧を受圧する接液ダ
イアフラムと、前記ボデイに設けられ前記第2測
定室と前記接液室とを連通する連通孔と、前記ボ
デイに設けられた内部空所、該内部空所を2個の
室に分けるバイモルフ型の圧電ダイアフラムと、
前記内部空所と前記第2測定室と前記接液室とを
連結する連結孔と、前記内部空所と前記第2測定
室と前記接液室と前記連通孔と前記連通孔とを満
たす封入液とを具備してなる半導体差圧測定装置
A sensor chip made of a semiconductor, a recess provided in the sensor chip and forming a diaphragm on the sensor chip, a semiconductor strain gauge provided in the diaphragm, and a substrate having one surface fixed to the sensor chip and forming the recess and a first measurement chamber. , a through hole that penetrates the substrate and communicates with the first measurement chamber; a pipe that has one end connected to the other surface of the substrate, communicates with the through hole, and into which one measurement pressure is introduced from the other end; a base to which is fixed; a body having one end fixed to the base and forming a second measurement chamber with the base and the sensor chip; a recess provided at the other end of the body; and a recess provided in the body. A liquid contact diaphragm that constitutes a liquid contact chamber and receives the other measurement pressure; a communication hole provided in the body that communicates the second measurement chamber and the liquid contact chamber; and an internal cavity provided in the body. , a bimorph piezoelectric diaphragm that divides the internal cavity into two chambers;
a connection hole that connects the internal cavity, the second measurement chamber, and the liquid contact chamber; an enclosure that fills the internal cavity, the second measurement chamber, the liquid contact chamber, the communication hole, and the communication hole; A semiconductor differential pressure measuring device comprising:
JP14041288U 1988-10-27 1988-10-27 Semiconductor differential pressure measuring device Expired - Lifetime JPH073310Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14041288U JPH073310Y2 (en) 1988-10-27 1988-10-27 Semiconductor differential pressure measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14041288U JPH073310Y2 (en) 1988-10-27 1988-10-27 Semiconductor differential pressure measuring device

Publications (2)

Publication Number Publication Date
JPH0260837U true JPH0260837U (en) 1990-05-07
JPH073310Y2 JPH073310Y2 (en) 1995-01-30

Family

ID=31404556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14041288U Expired - Lifetime JPH073310Y2 (en) 1988-10-27 1988-10-27 Semiconductor differential pressure measuring device

Country Status (1)

Country Link
JP (1) JPH073310Y2 (en)

Also Published As

Publication number Publication date
JPH073310Y2 (en) 1995-01-30

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