JPS61205154U - - Google Patents
Info
- Publication number
- JPS61205154U JPS61205154U JP8991985U JP8991985U JPS61205154U JP S61205154 U JPS61205154 U JP S61205154U JP 8991985 U JP8991985 U JP 8991985U JP 8991985 U JP8991985 U JP 8991985U JP S61205154 U JPS61205154 U JP S61205154U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- semiconductor
- conducting
- sensor
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は第１図の製作説明図、第３図は従来より一般
に使用されている従来例の構成説明図である。
１……センサチツプ、１１……ダイアフラム部
、１２……導圧室、２……ピエゾ抵抗ゲージ、３
……半導体基板、３１……導圧孔、４……低融点
ガラス、７……導圧パイプ、７１……陽極接合。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
The drawings are a manufacturing explanatory diagram of FIG. 1, and FIG. 3 is an explanatory diagram of the configuration of a conventional example that has been commonly used. DESCRIPTION OF SYMBOLS 1...Sensor chip, 11...Diaphragm part, 12...Pressure chamber, 2...Piezo resistance gauge, 3
... Semiconductor substrate, 31 ... Pressure conduction hole, 4 ... Low melting point glass, 7 ... Pressure conduction pipe, 71 ... Anodic bonding.
Claims (1)
、該センサチツプに取付けられ前記導圧室に圧力
を導入する導入孔を有する半導体基板と、前記導
圧孔に取付けられた導圧パイプとを具備する半導
体圧力センサにおいて、前記導圧パイプがガラス
材よりなり前記導圧孔に陽極接合されたことを特
徴とする半導体圧力センサ。 A semiconductor pressure sensor comprising a sensor chip made of a semiconductor and having a pressure-conducting chamber, a semiconductor substrate having an introduction hole attached to the sensor chip and introducing pressure into the pressure-conducting chamber, and a pressure-conducting pipe attached to the pressure-conducting hole. 1. A semiconductor pressure sensor, wherein the pressure guiding pipe is made of a glass material and is anodically bonded to the pressure guiding hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8991985U JPS61205154U (en) | 1985-06-14 | 1985-06-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8991985U JPS61205154U (en) | 1985-06-14 | 1985-06-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61205154U true JPS61205154U (en) | 1986-12-24 |
Family
ID=30644452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8991985U Pending JPS61205154U (en) | 1985-06-14 | 1985-06-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61205154U (en) |
-
1985
- 1985-06-14 JP JP8991985U patent/JPS61205154U/ja active Pending