JPS623038U - - Google Patents
Info
- Publication number
- JPS623038U JPS623038U JP9390185U JP9390185U JPS623038U JP S623038 U JPS623038 U JP S623038U JP 9390185 U JP9390185 U JP 9390185U JP 9390185 U JP9390185 U JP 9390185U JP S623038 U JPS623038 U JP S623038U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- pressure
- semiconductor
- thin film
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は半導体基板部３の加工説明図、第３図は第１
図の製作説明図である。
１……センサチツプ、１１……ダイアフラム部
、１２……導圧室、２……ピエゾ抵抗ゲージ、３
……半導体基板部、３１……半導体基板、３２…
…導圧孔、３３……ガラス薄膜。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
The figure is a processing explanatory diagram of the semiconductor substrate part 3, and FIG.
It is a manufacturing explanatory diagram of the figure. DESCRIPTION OF SYMBOLS 1...Sensor chip, 11...Diaphragm part, 12...Pressure chamber, 2...Piezo resistance gauge, 3
...Semiconductor substrate portion, 31...Semiconductor substrate, 32...
...Pressure hole, 33...Glass thin film.
Claims (1)
からなるセンサチツプと、該センサチツプに接合
され前記導圧室に圧力を導入する導入孔を有する
半導体基板部とを具備する半導体圧力センサにお
いて、一面が鏡面仕上げされかつ平面をなす半導
体基板と、前記鏡面に設けられたガラス薄膜と、
前記半導体基板に該ガラス薄膜側よりレーザー光
が照射されて形成された前記導圧孔とを備え前記
センサチツプに前記ガラス薄膜を介して陽極接合
された半導体基板部とを具備したことを特徴とす
る半導体圧力センサ。 A semiconductor pressure sensor comprising a sensor chip made of a semiconductor and having a sensor element and a pressure chamber, and a semiconductor substrate part bonded to the sensor chip and having an introduction hole for introducing pressure into the pressure chamber, one surface of which has a mirror finish. a flat semiconductor substrate; a glass thin film provided on the mirror surface;
The semiconductor substrate is characterized by comprising the pressure guiding hole formed by irradiating the semiconductor substrate with a laser beam from the glass thin film side, and a semiconductor substrate portion anodically bonded to the sensor chip via the glass thin film. Semiconductor pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9390185U JPS623038U (en) | 1985-06-21 | 1985-06-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9390185U JPS623038U (en) | 1985-06-21 | 1985-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS623038U true JPS623038U (en) | 1987-01-09 |
Family
ID=30651993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9390185U Pending JPS623038U (en) | 1985-06-21 | 1985-06-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS623038U (en) |
-
1985
- 1985-06-21 JP JP9390185U patent/JPS623038U/ja active Pending