JPH0485243U - - Google Patents
Info
- Publication number
- JPH0485243U JPH0485243U JP12811890U JP12811890U JPH0485243U JP H0485243 U JPH0485243 U JP H0485243U JP 12811890 U JP12811890 U JP 12811890U JP 12811890 U JP12811890 U JP 12811890U JP H0485243 U JPH0485243 U JP H0485243U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sensor chip
- diaphragm
- metal
- attached
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の製作説明図、第３図から第５図
は第１図の動作説明図、第６図から第１０図はそ
れぞれ本考案の他の実施例の要部構成説明図、第
１１図は従来より一般に使用されている従来例の
構成説明図、第１２図は第１１図の動作説明図で
ある。
１……センサチツプ、１１……凹部、１２……
ダイアフラム、１３……半導体ピエゾ抵抗ゲージ
、１４……基準室、２１……基板、２２……陽極
接合、２３……支持部、２４……陽極接合、２５
，３１，４１，５１……段差部、６１……シリコ
ンウエハー、７１……溝、Ａ……マイナス電極、
Ｂ……プラス電極。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
Fig. 2 is a manufacturing explanatory diagram of Fig. 1, Figs. 3 to 5 are explanatory diagrams of the operation of Fig. 1, and Figs. 6 to 10 are illustrations of main part configurations of other embodiments of the present invention. , FIG. 11 is an explanatory diagram of the configuration of a conventional example commonly used, and FIG. 12 is an explanatory diagram of the operation of FIG. 11. 1...sensor chip, 11...recess, 12...
Diaphragm, 13...Semiconductor piezo resistance gauge, 14...Reference chamber, 21...Substrate, 22...Anodic bonding, 23...Support part, 24...Anodic bonding, 25
, 31, 41, 51... step portion, 61... silicon wafer, 71... groove, A... negative electrode,
B...Positive electrode.
Claims (1)
と、 前記ダイアフラムに設けられた半導体ピエゾ抵
抗ゲージと、 前記センサチツプに一面側が陽極接合され前記
凹部と基準室を構成する可動イオンを有するガラ
ス材よりなる基板と、 該基板の他面側に一面が陽極接合され金属より
なる筒状の支持部と、 前記基板の外周部に設けられ前記センサチツプ
と基板との陽極接合の際あるいは前記基板と前記
支持部との陽極接合の際にマイナス電極が支持部
材の軸方向に取付けられる段差部と、 前記支持部の他端が取付けられる金属よりなる
ハウジングと を具備してなる圧力測定装置。[Claims for Utility Model Registration] A sensor chip made of a semiconductor, a recess forming a diaphragm in the sensor chip, a semiconductor piezoresistance gauge provided on the diaphragm, and one side of which is anodically bonded to the sensor chip, connecting the recess and a reference chamber. a substrate made of a glass material having movable ions; a cylindrical support part made of metal and one side of which is anodically bonded to the other side of the substrate; and an anode between the sensor chip and the substrate provided on the outer periphery of the substrate. A stepped portion to which a negative electrode is attached in the axial direction of the support member during bonding or anodic bonding between the substrate and the support portion, and a housing made of metal to which the other end of the support portion is attached. pressure measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12811890U JPH081467Y2 (en) | 1990-11-30 | 1990-11-30 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12811890U JPH081467Y2 (en) | 1990-11-30 | 1990-11-30 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0485243U true JPH0485243U (en) | 1992-07-24 |
| JPH081467Y2 JPH081467Y2 (en) | 1996-01-17 |
Family
ID=31875592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12811890U Expired - Lifetime JPH081467Y2 (en) | 1990-11-30 | 1990-11-30 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH081467Y2 (en) |
-
1990
- 1990-11-30 JP JP12811890U patent/JPH081467Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH081467Y2 (en) | 1996-01-17 |
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