JPS5826237A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPS5826237A JPS5826237A JP12488881A JP12488881A JPS5826237A JP S5826237 A JPS5826237 A JP S5826237A JP 12488881 A JP12488881 A JP 12488881A JP 12488881 A JP12488881 A JP 12488881A JP S5826237 A JPS5826237 A JP S5826237A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- header
- sensor chip
- chip
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は半導体ストレンゲージを用いて圧力を検出す
る圧力センサ、特に絶対圧型圧力センサを取付は支持す
るパッケージに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pressure sensor that detects pressure using a semiconductor strain gauge, and particularly to a package for mounting and supporting an absolute pressure type pressure sensor.
よく知られているように、この種の圧力センサはシリコ
ンなどの半導体単結晶の一部に不純物を拡散してゲージ
抵抗を形成し、外部から与えられる圧力歪によるゲージ
抵抗の抵抗変化を測定して、その圧力値を得るもので、
機能的には絶対圧形と差圧形とがあり、この発明は絶対
圧形を対象としている。As is well known, this type of pressure sensor forms a gauge resistor by diffusing impurities into a part of a semiconductor single crystal such as silicon, and measures the change in resistance of the gauge resistor due to pressure strain applied from the outside. and obtain the pressure value.
Functionally, there are two types: absolute pressure type and differential pressure type, and this invention targets absolute pressure type.
@1図にこの種の圧力センサチップ(lO)の −
断面構造を示しである。すなわち、この#!1図におい
て、このチップ(10)は周囲に支持部(11)を形成
したシリコンダイアフラム(12)ト、シリコン台座(
13)とをロー材(17)により接着してなり、内部空
間(14)を税対真空とし、これによってダイアプラム
(12−)は外気圧によりへこませられ、またこのダイ
アプラム(12)の上部a一部に不純物拡散法でゲージ
抵抗(15)を形成すると共に、支持部(11)上にリ
ード引出し用の電極(16)、(16)を設けたもので
ある。Figure 1 shows the cross-sectional structure of this type of pressure sensor chip (lO). That is, this #! In Figure 1, this chip (10) has a silicon diaphragm (12) around which a support part (11) is formed, a silicon pedestal (
13) are bonded together with brazing material (17), and the internal space (14) is made into a vacuum, whereby the diaphragm (12-) is dented by external pressure, and the upper part of this diaphragm (12) is A gauge resistor (15) is formed in a part by an impurity diffusion method, and electrodes (16) for leading out leads are provided on the support part (11).
ところで、この絶対正形圧カセンサチツプ(10)をパ
ッケージするために、この圧力センサチップ(10)を
パッケージのヘラグーに直接、接着材あるいはロー材な
どで取付けるようにしている力ζこの取付は手段ではシ
リコンとヘッダー材料との熱膨張率の、差によって、ダ
イアプラムに自然発生的な歪が加えられてしまい、この
歪応力の値を補正しなければならず、しかもこの歪応力
は製造時に加えられる加熱あるいは冷却プロセスなどで
不規則に変動して、精密には制御することができず、量
産のための大きな障害となっている。By the way, in order to package this absolutely positive pressure sensor chip (10), the pressure sensor chip (10) is attached directly to the package head using adhesive or brazing material. The difference in coefficient of thermal expansion between the silicon and the header material imposes a naturally occurring strain on the diaphragm that must be compensated for, and this strain is due to the heating applied during manufacturing. Otherwise, it fluctuates irregularly during the cooling process, etc., and cannot be precisely controlled, which is a major obstacle to mass production.
そこで従来は第2図に示すように、前記した熱膨張率の
差によって生ずる応力を極力減少させるため、ヘッダー
(21)上に例えば面積が1〜2.5mビ、高さが0.
2〜0.5mm程度の微小なシリコン単結晶の支持台(
22)を介在させ、圧力センサチップ(10)とこれら
を、例えばAu −8i共晶半田(23)などにより接
着取付けするようにしており、このように微小な支持台
の介入によって、ヘッダー側で生ずる歪応力がチップ側
に及ぶことを極力少なくし得るのであるが、一方、この
手段では、圧力センサの基本材料であるところの、材料
的にもろいシリコン単結晶を種々加工しなければならず
、その加工が非常に困難であるという不都合があった。Conventionally, as shown in FIG. 2, in order to reduce the stress caused by the difference in thermal expansion coefficients as much as possible, the header (21) has an area of, for example, 1 to 2.5 m and a height of 0.0 m.
A micro silicon single crystal support stand of about 2 to 0.5 mm (
22), and the pressure sensor chip (10) and these are adhesively attached using, for example, Au-8i eutectic solder (23), and by the intervention of a minute support stand, the header side This method makes it possible to minimize the strain stress that occurs on the chip side, but on the other hand, this method requires various processing of the brittle silicon single crystal, which is the basic material of the pressure sensor. There was a disadvantage that the processing was very difficult.
、なお第2図中、(24)は圧力導入パイプ付キャップ
、(25)は外部入出力リード、(26)は電極(16
)とリード(25)とを接続するAu線である。In Fig. 2, (24) is a cap with pressure introduction pipe, (25) is an external input/output lead, and (26) is an electrode (16).
) and the lead (25).
この発明は従来のこのような実情に鑑み、前記したシリ
コン単結晶支持台の介在が、ヘッダー(21)Ifから
の微小凸部の突出と同義である点ニ着目し、この微小凸
起上に圧力センサチップ(す)を接着取付けすることで
、前記支持台を加工せずに同様の目的を達成させるよう
にしたものである。In view of these conventional circumstances, the present invention focuses on the fact that the interposition of the silicon single crystal support is synonymous with the protrusion of minute protrusions from the header (21) If, By attaching the pressure sensor chip(s) with adhesive, the same purpose can be achieved without processing the support base.
以下、この発明の一実施例につき、第3図を参照して詳
細に説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to FIG.
この@3図実施例において、前記@2図従来例と同一符
号は同一または相当部分を示しており、この実施例では
ヘッダー(31)の中央部に、前記支持台(22)に代
わるところの、同様に面積が1〜2.5 m7F1′、
高さが0.2〜0.5mm程度の微小凸部(31m )
を一体的に突出させ、この微小凸部(31m)上にAu
−81共晶半田(23)などで前記圧力センサチップ(
10)を接着取付けしたものである。In this example shown in Fig. @3, the same reference numerals as in the conventional example shown in Fig. @2 indicate the same or corresponding parts. , similarly the area is 1 to 2.5 m7F1',
Microscopic protrusions with a height of about 0.2 to 0.5 mm (31 m)
is integrally protruded, and the Au
-81 eutectic solder (23) etc. to the pressure sensor chip (
10) is attached with adhesive.
従ってこの実施例構成にあっても、前記#!2図従来例
の場合と同様にヘッダー(31)側で生ずる歪応力がチ
ップ(10)側に影響するのを充分に避けることができ
る。Therefore, even in this embodiment configuration, the above #! As in the case of the conventional example shown in FIG. 2, it is possible to sufficiently prevent the strain stress generated on the header (31) side from affecting the chip (10) side.
以上詳述したようにこの発明によるときは、従来のシリ
コン単結晶支持台に代えて、ヘッダーに微小凸部を一体
的に突出させ、この微小凸部上に圧力センサチップな接
着取付けするようにしたから、別途支持台を加工する必
要がなぐ、額小凸部の形成はヘッダーと一体的であるた
めに容易であり、また接着取付けについても従来と同様
の作業形態ですみ、ヘッダー側の歪応力がセンサ側に達
するのを極力阻止できて、圧力センサチップ自身の本来
有している特性を充分に活用し得て、外部圧力を正確に
測定できるものである。As detailed above, according to the present invention, instead of the conventional silicon single crystal support, a minute convex portion is integrally protruded from the header, and a pressure sensor chip is adhesively mounted on the minute convex portion. Therefore, there is no need to process a separate support base, the formation of the small convex part on the forehead is easy as it is integrated with the header, and the adhesive installation can be done in the same way as before, reducing distortion on the header side. It is possible to prevent stress from reaching the sensor side as much as possible, to fully utilize the inherent characteristics of the pressure sensor chip itself, and to accurately measure external pressure.
第1図は絶対圧影圧カセンサチツプの概要構造を示す断
面図、第2図は従来例による絶対圧膨圧カセンサチツプ
のパッケージを示す断面図、第3図はこの発明の一実施
例を適用した同上パッケージを示す断面図である。
(lO)・・・・圧カセ/サチッグ、(12)・・・・
シリコンダイアフラム、(13)・ ・・・シリコン台
座、(15)・e・・ゲージ抵抗、(16)φ・・・電
i、’(31)・・・・ヘッダー、(31m)・・・・
微小凸部。
代理人 S 舒 信 −(外1名)FIG. 1 is a cross-sectional view showing the general structure of an absolute pressure sensor chip, FIG. 2 is a cross-sectional view showing a package of a conventional absolute pressure sensor chip, and FIG. 3 is the same as the same to which an embodiment of the present invention is applied. It is a sectional view showing a package. (lO)...pressure case/sachig, (12)...
Silicon diaphragm, (13)...Silicon pedestal, (15)...e...Gauge resistor, (16)φ...Electric i,'(31)...Header, (31m)...
Microscopic protrusions. Agent S Shu Xin - (1 other person)
Claims (1)
ヘッダー面には一体的に微小凸部を形成させ、この微小
凸部上に前記圧力センサチップのシリコン台座を接着取
付けしたことを特徴とする圧力センナ。[Claims] A silicon diaphragm forming a gauge resistor. and a pressure sensor chip consisting of a silicon pedestal,
A pressure sensor characterized in that a minute convex portion is integrally formed on the header surface, and a silicon pedestal of the pressure sensor chip is adhesively attached onto the minute convex portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12488881A JPS5826237A (en) | 1981-08-07 | 1981-08-07 | Pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12488881A JPS5826237A (en) | 1981-08-07 | 1981-08-07 | Pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5826237A true JPS5826237A (en) | 1983-02-16 |
Family
ID=14896573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12488881A Pending JPS5826237A (en) | 1981-08-07 | 1981-08-07 | Pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5826237A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60201228A (en) * | 1984-03-27 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPS60201227A (en) * | 1984-03-26 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPS60201229A (en) * | 1984-03-27 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPS60201226A (en) * | 1984-03-27 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
US5249469A (en) * | 1988-05-17 | 1993-10-05 | Jonsson & Billquist Development Ab | Pressure gauge |
US5986316A (en) * | 1997-11-26 | 1999-11-16 | Denso Corporation | Semiconductor type physical quantity sensor |
WO2019123853A1 (en) * | 2017-12-20 | 2019-06-27 | 株式会社鷺宮製作所 | Pressure sensor |
-
1981
- 1981-08-07 JP JP12488881A patent/JPS5826237A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60201227A (en) * | 1984-03-26 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPH0542607B2 (en) * | 1984-03-26 | 1993-06-29 | Yokogawa Electric Corp | |
JPS60201228A (en) * | 1984-03-27 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPS60201229A (en) * | 1984-03-27 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPS60201226A (en) * | 1984-03-27 | 1985-10-11 | Yokogawa Hokushin Electric Corp | Pressure sensor |
JPH0542609B2 (en) * | 1984-03-27 | 1993-06-29 | Yokogawa Electric Corp | |
JPH0542610B2 (en) * | 1984-03-27 | 1993-06-29 | Yokogawa Electric Corp | |
JPH0542608B2 (en) * | 1984-03-27 | 1993-06-29 | Yokogawa Electric Corp | |
US5249469A (en) * | 1988-05-17 | 1993-10-05 | Jonsson & Billquist Development Ab | Pressure gauge |
US5986316A (en) * | 1997-11-26 | 1999-11-16 | Denso Corporation | Semiconductor type physical quantity sensor |
WO2019123853A1 (en) * | 2017-12-20 | 2019-06-27 | 株式会社鷺宮製作所 | Pressure sensor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH04258176A (en) | Semiconductor pressure sensor | |
JPH08178778A (en) | Semiconductor pressure detector | |
JP2005210131A (en) | Packaging method and structure of semiconductor chip | |
JPH1130559A (en) | Pressure sensor | |
JPS58146827A (en) | Semiconductor type pressure sensor | |
JPS6073325A (en) | Semiconductor pressure sensor | |
JPS5826237A (en) | Pressure sensor | |
JPH0138256B2 (en) | ||
US4400682A (en) | Pressure sensor | |
JPH11304612A (en) | Semiconductor pressure detector | |
JPH0269630A (en) | Semiconductor pressure sensor | |
JPH02196938A (en) | Pressure sensor | |
JPH07280679A (en) | Pressure sensor | |
JPH0566979B2 (en) | ||
JPS63228038A (en) | Semiconductor pressure transducer | |
JP2616952B2 (en) | Semiconductor pressure sensor | |
JP2000046667A (en) | Semiconductor pressure sensor element | |
JPS59174728A (en) | Semiconductor type pressure sensor | |
JPH04350530A (en) | Semiconductor pressure sensor | |
JPH0547393Y2 (en) | ||
JPH0567168B2 (en) | ||
JPS6188121A (en) | Pressure transducer | |
JPS61245036A (en) | Semiconductor pressure detector | |
JPH03194432A (en) | Semiconductor pressure sensor | |
JPS6393163A (en) | Semiconductor pressure sensor |