JPS6155264B2 - - Google Patents
Info
- Publication number
- JPS6155264B2 JPS6155264B2 JP17204780A JP17204780A JPS6155264B2 JP S6155264 B2 JPS6155264 B2 JP S6155264B2 JP 17204780 A JP17204780 A JP 17204780A JP 17204780 A JP17204780 A JP 17204780A JP S6155264 B2 JPS6155264 B2 JP S6155264B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- thin
- diaphragm
- pressure transducer
- outer diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Description
【発明の詳細な説明】
本発明は圧力変換器、特に半導体自体を測定ダ
イアフラムとする圧力変換器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pressure transducer, in particular a pressure transducer whose measuring diaphragm is a semiconductor itself.
従来、差圧あるいは圧力の検出に用いられてい
る半導体の測定ダイアフラムはシリコン単結晶基
板の中央に肉厚の起歪部、周囲に肉厚の固定部を
形成した凹形のダイアフラムである。この測定ダ
イアフラムは固定部をガラスやシリコンおよび金
属等の支持部材を介して本体ケースに取り付けら
れており、また起歪部には拡散法やイオンインプ
ランテーシヨン法によりゲージ抵抗が形成され、
導体を介して外部に取り出される。ゲージ抵抗は
温度を少なくし、出力信号を大きくする為に、２
個又は４個形成され、周知のホイートストンブリ
ツジに結線されて用いられる。 Conventionally, a semiconductor measuring diaphragm used for detecting differential pressure or pressure is a concave diaphragm having a thick strain-generating portion formed in the center of a silicon single crystal substrate and a thick fixed portion formed around the periphery. This measurement diaphragm has a fixed part attached to the main body case via a support member made of glass, silicon, metal, etc., and a gauge resistance is formed in the strain-generating part by diffusion method or ion implantation method.
It is taken out to the outside via a conductor. Gauge resistance is 2 to reduce temperature and increase output signal.
It is used by forming two or four of them and connecting them to a well-known Wheatstone bridge.
このシリコンダイアフラム形の圧力変換器は
IC技術を応用できるので量産性に優れ、さらに
シリコン単結晶が理想的な弾性材料であるため
に、ヒステリシスがなく、再現性に優れている。
このような構造のシリコンダイアフラムではダイ
アフラムが比較的厚い場合には出力電圧は圧力に
対し非常に精度良く直線的に変化する。しかし、
低い圧力を測定し、高い感度を得る為にダイアフ
ラムを薄く形成した時、圧力と出力との関係は著
しく直線からはずれてしまうことが低圧力におけ
るシリコンダイアフラムの使用を困難なものにし
ていた。その上、従来の圧力変換器は、両方向か
らの圧力に対してその直線性に大きな差がある
為、低圧力測定のみならず、正逆両方向からの圧
力にも使用出来なかつた。 This silicon diaphragm type pressure transducer
Since it can apply IC technology, it has excellent mass production, and since silicon single crystal is an ideal elastic material, it has no hysteresis and has excellent reproducibility.
In a silicon diaphragm having such a structure, when the diaphragm is relatively thick, the output voltage changes linearly with respect to pressure with very high accuracy. but,
When diaphragms are made thin to measure low pressures and obtain high sensitivity, the relationship between pressure and output deviates significantly from a straight line, making it difficult to use silicon diaphragms at low pressures. Furthermore, conventional pressure transducers cannot be used not only for measuring low pressures but also for pressures from both forward and reverse directions, since there is a large difference in linearity with respect to pressures from both directions.
本発明の目的は低い圧力でも大きな出力を得る
ことが出来、かつ正逆両方向からの圧力に対して
も圧力との関係が直線的である高精度の圧力変換
器を提供するにある。 An object of the present invention is to provide a highly accurate pressure transducer that can obtain a large output even at low pressure and has a linear relationship with pressure even in both forward and reverse directions.
本発明は中央部および外周部を肉厚、その間を
薄肉に形成し、肉薄部にゲージ抵抗を設けた半導
体測定ダイアフラムとその保持台とからなり、半
導体測定ダイアフラムの肉薄部外径が５mm以上で
さらに望ましくは肉薄部の外径と内径の比を0.7
以上の形状で圧力を測定するようにしたものであ
る。 The present invention consists of a semiconductor measuring diaphragm having a thick central part and an outer peripheral part, and a thin part between them, and a holding stand for the semiconductor measuring diaphragm, in which a gauge resistor is provided in the thin part. More preferably, the ratio of the outer diameter to the inner diameter of the thin part is 0.7.
The pressure is measured using the above shape.
本発明の一実施例を図面に基づいて説明する。 An embodiment of the present invention will be described based on the drawings.
第１図は圧力変換器の全体構造断面図でそのほ
ぼ中央にｎ形単結晶シリコンからなる測定ダイア
フラム１を有している。この測定ダイアフラム１
はその中央に中心剛体３、外周に固定部４の肉厚
部を有し、環状起歪部となる肉薄部５を形成して
いる。この肉薄起歪部５にはＰ形ゲージ抵抗６が
感度の最大となる〈111〉軸方向の径方向に沿つ
て複数個形成されている。これらの抵抗はホイー
トストンブリツジに組まれ差動的に出力を得るよ
うになつている。ここで測定ダイアフラムの寸法
形状は環状肉薄部の外径Ｄと内径ｄとの関係がＤ
＞５mmでかつｄ／Ｄ＞0.7となつている。 FIG. 1 is a sectional view of the overall structure of a pressure transducer, which has a measuring diaphragm 1 made of n-type single crystal silicon approximately in the center thereof. This measuring diaphragm 1
has a central rigid body 3 at its center, a thick part of a fixing part 4 on the outer periphery, and a thin part 5 which becomes an annular strain-generating part. A plurality of P-type gauge resistors 6 are formed in the thin strain-generating portion 5 along the radial direction of the <111> axis direction where the sensitivity is maximum. These resistors are assembled into a Wheatstone bridge so that output can be obtained differentially. Here, the dimensions and shape of the measurement diaphragm are such that the relationship between the outer diameter D and inner diameter d of the annular thin section is D.
>5 mm and d/D >0.7.
測定ダイアフラム１は中央に貫通穴を有するガ
ラス板１１と金属支持台１２を介して本体１５に
保持される。このガラス円板１１と金属支持台１
２はシリコンの熱膨張係数とほぼ同じ材質のもの
が用いられる。具体的にはガラス円板１１は硼珪
酸塩ガラスであり、金属支持台１２は鉄−ニツケ
ルあるいは鉄−ニツケル−コバルト合金である。
測定ダイアフラム１とガラス板１１およびガラス
板１１と金属支持台１２は陽極結合法により、金
属支持台１２と本体１５および本体１５とカバー
１６はアーク溶接によりそれぞれ接合される。 The measurement diaphragm 1 is held by a main body 15 via a glass plate 11 having a through hole in the center and a metal support 12. This glass disk 11 and metal support base 1
2 is made of a material having approximately the same coefficient of thermal expansion as silicon. Specifically, the glass disk 11 is made of borosilicate glass, and the metal support 12 is made of iron-nickel or iron-nickel-cobalt alloy.
The measurement diaphragm 1 and the glass plate 11, the glass plate 11 and the metal support 12 are joined by anodic bonding, and the metal support 12 and the main body 15, and the main body 15 and the cover 16 are joined by arc welding.
測定ダイアフラム１のゲージ抵抗６は、導体７
で接続され、ハーメチツクシール１７に支持され
た導体１８により外部に引出されている。 The gauge resistance 6 of the measuring diaphragm 1 is connected to the conductor 7
The conductor 18 is supported by a hermetic seal 17 and is led out to the outside.
以上のような構成になる圧力変換器では次のよ
うな効果を有する。 The pressure transducer configured as described above has the following effects.
第１の効果は高い圧力から低い圧力まで非常に
広い圧力範囲で圧力−電気出力の関係が直線的に
なることである。圧力−電気出力の直線性は測定
ダイアフラムの形状を中央と外周部に肉厚部に持
ち、その間を環状肉薄部にて形成することで大巾
に改善できる。しかしながら我々の実験結果によ
れば直線性の特性は環状肉薄部の寸法形状に大き
く依存し、環状肉薄部の寸法を変えることにより
大きく変わる。実際には環状肉薄部の外径Ｄが５
mm以上で、その内径ｄとの関係ｄ／Ｄの比が大き
い程良い特性となる。特に肉薄部の板厚が20μｍ
と薄くなるとその膜応力により、直線性の悪化す
るにもかかわらず、ｄ／Ｄ＞0.7以上の時、従来
の形状に比べ1/20以下になり、又第２図に示す如
く、ｄ／Ｄ＝0.6の時に比べてもその特性は1/3以
下に改善される。さらにこの特性は第３図の実験
結果からも明らかなように環状肉薄部外径Ｄにも
依存し、Ｄ＞５mm以上の時、良好な直線性を示
す。 The first effect is that the relationship between pressure and electrical output becomes linear over a very wide pressure range from high pressure to low pressure. The linearity of the pressure-electrical output can be greatly improved by shaping the measuring diaphragm so that it has thick sections at the center and outer periphery, and an annular thin section between them. However, according to our experimental results, the linearity characteristics largely depend on the dimensions and shape of the annular thin section, and can be greatly changed by changing the dimensions of the annular thin section. Actually, the outer diameter D of the annular thin part is 5
mm or more, and the larger the ratio d/D with respect to the inner diameter d, the better the characteristics. In particular, the thickness of the thin part is 20μm.
Even though the linearity deteriorates due to the film stress when it becomes thinner, when d/D > 0.7, it becomes less than 1/20 of the conventional shape, and as shown in Figure 2, d/D Even when compared to when = 0.6, the characteristics are improved to less than 1/3. Furthermore, as is clear from the experimental results shown in FIG. 3, this characteristic also depends on the outer diameter D of the thin annular portion, and when D>5 mm or more, good linearity is exhibited.
以上は正側から圧力を加えた時（ゲージ抵抗面
側から圧力を加えた時）の特性であるが、本発明
構造の圧力変換器の他の特徴である逆側（ゲージ
抵抗面と反対面側）から圧力を加えた時のｄ／Ｄ
依存性、Ｄ依存性を同上第２図、第３図中に点線
で示す。この時Ｄ依存性が大きくあらわれるが、
やはりＤ＞５mm以上としておけば、良好な直線性
が得られることがわかる。 The above are the characteristics when pressure is applied from the positive side (when pressure is applied from the gauge resistance side), but another feature of the pressure transducer of the structure of the present invention is from the opposite side (the side opposite to the gauge resistance side). d/D when pressure is applied from the side)
The dependence and D dependence are shown by dotted lines in FIGS. 2 and 3. At this time, D dependence appears greatly,
It can be seen that good linearity can be obtained if D>5 mm or more.
以上本発明によれば、低い圧力でも大きな出力
を得ることが出来、かつ正逆両方向からの圧力に
対しても圧力と出力との関係が直線的である高精
度の圧力変換器を得ることができる。 As described above, according to the present invention, it is possible to obtain a high-precision pressure transducer that can obtain a large output even at low pressure and has a linear relationship between pressure and output even when pressure is applied in both forward and reverse directions. can.
第１図は本発明の一実施例になる半導体圧力変
換器の全体構造断面図、第２図は本発明構造での
環状肉薄部の外径および内径の比を変えた時の正
圧および逆圧での実験結果を示す図で実線が正
圧、点線が逆圧のデータ、第３図は環状肉薄部の
外径および内径比を0.7とした時の外径を変えた
場合の実験結果で実線が正圧、点線が逆圧の時を
示す図である。
１……測定ダイアフラム、３……中心剛体、４
……固定部、５……肉薄起歪部、６……ゲージ抵
抗、７……導体、１１……ガラス円板、１２……
金属支持台、１５……本体、１６……カバー、１
７……ハーメチツクシール、１８……導体。
Fig. 1 is a sectional view of the overall structure of a semiconductor pressure transducer according to an embodiment of the present invention, and Fig. 2 shows positive pressure and reverse pressure when the ratio of the outer diameter and inner diameter of the annular thin section in the structure of the present invention is changed. The solid line shows the data for positive pressure, the dotted line shows the data for reverse pressure, and Figure 3 shows the experimental results when the outer diameter of the annular thin section was changed when the outer diameter and inner diameter ratio was set to 0.7. It is a figure which shows the time when a solid line is positive pressure, and a dotted line is reverse pressure. 1...Measuring diaphragm, 3...Center rigid body, 4
... Fixed part, 5 ... Thin strain part, 6 ... Gauge resistor, 7 ... Conductor, 11 ... Glass disk, 12 ...
Metal support stand, 15...Main body, 16...Cover, 1
7... Hermetic seal, 18... Conductor.
Claims (1)
し、この肉薄部に複数のゲージ抵抗を設けた半導
体結晶から成る測定ダイアフラムと、この測定ダ
イアフラムの外周肉厚部に接合される支持部材と
を備え、前記測定ダイアフラムの肉薄部の外径を
５mm以上としたことを特徴とする半導体圧力変換
器。 ２ 特許請求の範囲第１項記載において、前記肉
薄部の内径ｄと外径Ｄとの比ｄ／Ｄが0.7以上で
あることを特徴とする半導体圧力変換器。[Scope of Claims] 1. A measurement diaphragm made of semiconductor crystal, which has a thick center and outer circumference and a thin thickness between them, and a plurality of gauge resistors provided in the thin sections, and is bonded to the thick outer circumference of the measurement diaphragm. 1. A semiconductor pressure transducer comprising: a supporting member having a thin wall, and an outer diameter of a thin portion of the measuring diaphragm being 5 mm or more. 2. The semiconductor pressure transducer according to claim 1, wherein the ratio d/D of the inner diameter d and the outer diameter D of the thin portion is 0.7 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17204780A JPS5796574A (en) | 1980-12-08 | 1980-12-08 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17204780A JPS5796574A (en) | 1980-12-08 | 1980-12-08 | Semiconductor pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5796574A JPS5796574A (en) | 1982-06-15 |
| JPS6155264B2 true JPS6155264B2 (en) | 1986-11-27 |
Family
ID=15934544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17204780A Granted JPS5796574A (en) | 1980-12-08 | 1980-12-08 | Semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5796574A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107310A (en) * | 1987-10-20 | 1989-04-25 | Matsushita Electric Ind Co Ltd | Floating magnetic head |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132545A (en) * | 1992-10-19 | 1994-05-13 | Mitsubishi Electric Corp | Pressure detector |
| JP3323032B2 (en) * | 1995-06-07 | 2002-09-09 | 三菱電機株式会社 | Design method of semiconductor pressure detector |
-
1980
- 1980-12-08 JP JP17204780A patent/JPS5796574A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107310A (en) * | 1987-10-20 | 1989-04-25 | Matsushita Electric Ind Co Ltd | Floating magnetic head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5796574A (en) | 1982-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1078217A (en) | Force transducing cantilever beam and pressure transducer incorporating it | |
| US5926692A (en) | Method of manufacturing a support structure for a semiconductor pressure transducer | |
| US3739315A (en) | Semiconductor transducers having h shaped cross-sectional configurations | |
| JPH0565015B2 (en) | ||
| US4527428A (en) | Semiconductor pressure transducer | |
| JPH0425735A (en) | Semicondcutor diaphragm for measuring pressure and differential pressure | |
| JPS5855732A (en) | Electrostatic capacity type pressure sensor | |
| US3402609A (en) | Semiconductor mechanical-to-electrical transducer | |
| JPS6051051B2 (en) | Micro pressure measurement transducer | |
| JPS63308529A (en) | Capacitive pressure converter | |
| JPS5952727A (en) | Semiconductor pressure sensor | |
| US3455165A (en) | Pressure sensitive devices | |
| JPS6155264B2 (en) | ||
| JPH0269630A (en) | Semiconductor pressure sensor | |
| JPH0419495B2 (en) | ||
| JPS6199383A (en) | Capacity type displacement sensor | |
| JP2512220B2 (en) | Multi-function sensor | |
| JPS5845533A (en) | Pressure detector | |
| JPS63196081A (en) | Semiconductor-type pressure detector | |
| JPH06102128A (en) | Semiconductor composite function sensor | |
| CN212988661U (en) | MEMS pressure chip | |
| JPH10142086A (en) | Semiconductor pressure sensor, its manufacturing method, and differential pressure transmitter using the same | |
| JPS59217374A (en) | Semiconductor strain converter | |
| JP3120388B2 (en) | Semiconductor pressure transducer | |
| RU2316743C2 (en) | Pressure measuring device |