JPS5796574A - Semiconductor pressure transducer - Google Patents

Semiconductor pressure transducer

Info

Publication number
JPS5796574A
JPS5796574A JP17204780A JP17204780A JPS5796574A JP S5796574 A JPS5796574 A JP S5796574A JP 17204780 A JP17204780 A JP 17204780A JP 17204780 A JP17204780 A JP 17204780A JP S5796574 A JPS5796574 A JP S5796574A
Authority
JP
Japan
Prior art keywords
section
pressure
thin section
larger
outside diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17204780A
Other languages
Japanese (ja)
Other versions
JPS6155264B2 (en
Inventor
Yukio Takahashi
Michitaka Shimazoe
Yoshitaka Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17204780A priority Critical patent/JPS5796574A/en
Publication of JPS5796574A publication Critical patent/JPS5796574A/en
Publication of JPS6155264B2 publication Critical patent/JPS6155264B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain large output even by low pressure by forming a gauge resistor to a thin section between a thick central section and an outer circumferential section, using the resistor as a semiconductor measuring diaphragm and shaping an outside diameter of the thin section in predetermined size or larger. CONSTITUTION:The measuring diaphragm 1 consisting of a substance such as N type silicon has a central rigid body 3 at the center, a thick section of a fixing section 4 on the outer circumference and the thin section 5 functioning as an annular strain causing section at the middle. A plurality of the P type gauge resistors 6 are shaped to the thin section in the diametrical direction of the <111> axial direction, along which sensitivity is maximized. The outside diameter of the thin section of the measuring diaphragm is made 5mm. or larger. The ratio of the outside diameter to an inside diameter of the thin section is made value such as 0.7 or larger. Accordingly, the relationship of pressure-electrical output is rectilinear within a wide pressure range up to low pressure from high pressure. The relationship of pressure and output is rectilinear to pressure in both forward and reverse directions.
JP17204780A 1980-12-08 1980-12-08 Semiconductor pressure transducer Granted JPS5796574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17204780A JPS5796574A (en) 1980-12-08 1980-12-08 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17204780A JPS5796574A (en) 1980-12-08 1980-12-08 Semiconductor pressure transducer

Publications (2)

Publication Number Publication Date
JPS5796574A true JPS5796574A (en) 1982-06-15
JPS6155264B2 JPS6155264B2 (en) 1986-11-27

Family

ID=15934544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17204780A Granted JPS5796574A (en) 1980-12-08 1980-12-08 Semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS5796574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436491A (en) * 1992-10-19 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Pressure sensor for high temperature vibration intense environment
JPH08334424A (en) * 1995-06-07 1996-12-17 Mitsubishi Electric Corp Semiconductor pressure detecting device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107310A (en) * 1987-10-20 1989-04-25 Matsushita Electric Ind Co Ltd Floating magnetic head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436491A (en) * 1992-10-19 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Pressure sensor for high temperature vibration intense environment
JPH08334424A (en) * 1995-06-07 1996-12-17 Mitsubishi Electric Corp Semiconductor pressure detecting device

Also Published As

Publication number Publication date
JPS6155264B2 (en) 1986-11-27

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