JPS5758367A - Manufacture of pressure sensor - Google Patents
Manufacture of pressure sensorInfo
- Publication number
- JPS5758367A JPS5758367A JP13357880A JP13357880A JPS5758367A JP S5758367 A JPS5758367 A JP S5758367A JP 13357880 A JP13357880 A JP 13357880A JP 13357880 A JP13357880 A JP 13357880A JP S5758367 A JPS5758367 A JP S5758367A
- Authority
- JP
- Japan
- Prior art keywords
- gauges
- strain
- diaphragm
- manufacture
- outside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000007935 neutral effect Effects 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
PURPOSE:To manufacture a pressure sensor effectively by a method wherein the output sensitivity coefficients of pressure sensitive elements are regulated by making the diameter of diaphragm to be changed fixing the arranged positions of strain gauges as they are. CONSTITUTION:The thin film strain gauge consisted of a titanium diaphragm having 0.04mm. thickness and being preformed with insulating film coating treatment and gold germanium having 0.4mm. thickness and 0.16mm. breadth is provided. The two strain guages 1, 3 are arranged inside of a neutral circle of strain, and the two strain gauges 2, 4 are arranged outside. The gauges 2, 4 are arranged respectively on the prolonged line in the lengthy direction of the gauges 1, 3 at the position of distance between the centers in the lengthy direction. When the diameter of diaphragm is made to be changed within the range wherein the gauges 2, 4 remain outside of the neutral circle 13' as they are, and are not to be protruded outside of a diaphragm 14', the temperature coefficient of output sensitivity can be regulated freely.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13357880A JPS5758367A (en) | 1980-09-24 | 1980-09-24 | Manufacture of pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13357880A JPS5758367A (en) | 1980-09-24 | 1980-09-24 | Manufacture of pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5758367A true JPS5758367A (en) | 1982-04-08 |
Family
ID=15108081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13357880A Pending JPS5758367A (en) | 1980-09-24 | 1980-09-24 | Manufacture of pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758367A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61269033A (en) * | 1985-05-23 | 1986-11-28 | Tokai Rika Co Ltd | Diaphragm |
| US6150917A (en) * | 1995-02-27 | 2000-11-21 | Motorola, Inc. | Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825556A (en) * | 1971-08-03 | 1973-04-03 |
-
1980
- 1980-09-24 JP JP13357880A patent/JPS5758367A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825556A (en) * | 1971-08-03 | 1973-04-03 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61269033A (en) * | 1985-05-23 | 1986-11-28 | Tokai Rika Co Ltd | Diaphragm |
| JPH0570773B2 (en) * | 1985-05-23 | 1993-10-05 | Tokai Rika Co Ltd | |
| US6150917A (en) * | 1995-02-27 | 2000-11-21 | Motorola, Inc. | Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method |
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