JPS53109490A - Semiconductor strain gauge - Google Patents

Semiconductor strain gauge

Info

Publication number
JPS53109490A
JPS53109490A JP2504577A JP2504577A JPS53109490A JP S53109490 A JPS53109490 A JP S53109490A JP 2504577 A JP2504577 A JP 2504577A JP 2504577 A JP2504577 A JP 2504577A JP S53109490 A JPS53109490 A JP S53109490A
Authority
JP
Japan
Prior art keywords
strain gauge
semiconductor strain
plane
diaphragm
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2504577A
Other languages
Japanese (ja)
Other versions
JPS5923118B2 (en
Inventor
Masanori Tanabe
Satoshi Shimada
Motohisa Nishihara
Kazuji Yamada
Yasumasa Matsuda
Michitaka Shimazoe
Yoshitaka Matsuoka
Yukio Takahashi
Katsuya Katogi
Mitsuo Ai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2504577A priority Critical patent/JPS5923118B2/en
Priority to DE2809549A priority patent/DE2809549C2/en
Priority to US05/883,589 priority patent/US4173900A/en
Publication of JPS53109490A publication Critical patent/JPS53109490A/en
Publication of JPS5923118B2 publication Critical patent/JPS5923118B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the strain gauge having a wide variety of permissible temperature range, by taking the (110) plane of crystal as the diaphragm plane and by making the distance from the center of diaphragm different for the strain gauge element toward radial and tangent direction.
COPYRIGHT: (C)1978,JPO&Japio
JP2504577A 1977-03-07 1977-03-07 semiconductor strain gauge Expired JPS5923118B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2504577A JPS5923118B2 (en) 1977-03-07 1977-03-07 semiconductor strain gauge
DE2809549A DE2809549C2 (en) 1977-03-07 1978-03-06 A method of manufacturing a semiconductor pressure sensor and a semiconductor pressure sensor
US05/883,589 US4173900A (en) 1977-03-07 1978-03-06 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2504577A JPS5923118B2 (en) 1977-03-07 1977-03-07 semiconductor strain gauge

Publications (2)

Publication Number Publication Date
JPS53109490A true JPS53109490A (en) 1978-09-25
JPS5923118B2 JPS5923118B2 (en) 1984-05-30

Family

ID=12154936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2504577A Expired JPS5923118B2 (en) 1977-03-07 1977-03-07 semiconductor strain gauge

Country Status (1)

Country Link
JP (1) JPS5923118B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006029931A (en) * 2004-07-15 2006-02-02 Hitachi Ltd Construction structure defect sensor
JP2008082907A (en) * 2006-09-28 2008-04-10 Hitachi Ltd Device for measuring mechanical quantity
JP2017500545A (en) * 2013-12-11 2017-01-05 メレクシス・テクノロジーズ・ナムローゼフェンノートシャップ Semiconductor pressure sensor
US10317297B2 (en) 2013-12-11 2019-06-11 Melexis Technologies Nv Semiconductor pressure sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006029931A (en) * 2004-07-15 2006-02-02 Hitachi Ltd Construction structure defect sensor
JP2008082907A (en) * 2006-09-28 2008-04-10 Hitachi Ltd Device for measuring mechanical quantity
JP4710779B2 (en) * 2006-09-28 2011-06-29 株式会社日立製作所 Mechanical quantity measuring device
JP2017500545A (en) * 2013-12-11 2017-01-05 メレクシス・テクノロジーズ・ナムローゼフェンノートシャップ Semiconductor pressure sensor
US10317297B2 (en) 2013-12-11 2019-06-11 Melexis Technologies Nv Semiconductor pressure sensor

Also Published As

Publication number Publication date
JPS5923118B2 (en) 1984-05-30

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