JPH0259451U - - Google Patents
Info
- Publication number
- JPH0259451U JPH0259451U JP13735888U JP13735888U JPH0259451U JP H0259451 U JPH0259451 U JP H0259451U JP 13735888 U JP13735888 U JP 13735888U JP 13735888 U JP13735888 U JP 13735888U JP H0259451 U JPH0259451 U JP H0259451U
- Authority
- JP
- Japan
- Prior art keywords
- output
- pressure
- diaphragm
- diaphragms
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 230000002265 prevention Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の電気回路のブロツク図、第３図
は本考案の動作説明図、第４図は従来より一般に
使用されている従来例の構成説明図である。
１７……貫通孔、１８……ボデイ、１９……連
通孔、２１……接液ダイアフラム、２２……接液
室、２３……封入液、３１，３２……センサチツ
プ、４１，４２……ダイアフラム、５１，５２…
…半導体ピエゾ抵抗素子、６１……基板、６２…
…測定室、７１，７２……過大圧保護機構、８１
，８２……増幅回路、８３……出力判定器、８４
……信号処理回路。
FIG. 1 is an explanatory diagram of the main part of an embodiment of the present invention.
FIG. 2 is a block diagram of the electric circuit shown in FIG. 1, FIG. 3 is an explanatory diagram of the operation of the present invention, and FIG. 4 is an explanatory diagram of the configuration of a conventional example commonly used. 17...Through hole, 18...Body, 19...Communication hole, 21...Liquid contact diaphragm, 22...Liquid contact chamber, 23...Sealed liquid, 31, 32...Sensor chip, 41, 42...Diaphragm ,51,52...
...Semiconductor piezoresistive element, 61...Substrate, 62...
...Measurement chamber, 71, 72...Overpressure protection mechanism, 81
, 82...Amplification circuit, 83...Output determiner, 84
...Signal processing circuit.
Claims (1)
抗素子により該シリコンダイアフラムに加えられ
る差圧を電気信号に変換する半導体差圧測定装置
において、 シリコンよりなるセンサチツプと該センサチツ
プにそれぞれ設けられ所用の測定レンジを満足す
る少なくとも２個以上のダイアフラムと該ダイア
フラムにそれぞれ設けられたピエゾ抵抗素子と前
記ダイアフラムとそれぞれ測定室を構成する基板
と該基板に一端が固定され他端が前記ダイアフラ
ムに対向して設けられ該ダイアフラムに過大圧が
加わるのを防止する柱状の過大圧防止機構と、前
記それぞれのピエゾ抵抗素子の出力を判定してい
ずれか１個のピエゾ抵抗素子の出力を出力として
出力する出力判定器とを具備し前記センサチツプ
の外表面に高圧側の測定圧が加わり前記測定室に
低圧側の測定圧が加わるように構成されたことを
特徴とする半導体差圧測定装置。[Claims for Utility Model Registration] A semiconductor differential pressure measuring device that converts differential pressure applied to a silicon diaphragm into an electrical signal by a piezoresistive element formed on the silicon diaphragm, comprising: a sensor chip made of silicon; At least two or more diaphragms satisfying a desired measurement range; a piezoresistive element provided on each of the diaphragms; a substrate forming a measurement chamber with each of the diaphragms; one end fixed to the substrate and the other end attached to the diaphragm; Column-shaped overpressure prevention mechanisms are provided facing each other to prevent excessive pressure from being applied to the diaphragm, and the output of each of the piezoresistive elements is determined and the output of one of the piezoresistive elements is output as an output. 1. A semiconductor differential pressure measuring device, characterized in that the device is configured such that a high-pressure side measurement pressure is applied to the outer surface of the sensor chip and a low-pressure side measurement pressure is applied to the measurement chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13735888U JPH0259451U (en) | 1988-10-21 | 1988-10-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13735888U JPH0259451U (en) | 1988-10-21 | 1988-10-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0259451U true JPH0259451U (en) | 1990-05-01 |
Family
ID=31398709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13735888U Pending JPH0259451U (en) | 1988-10-21 | 1988-10-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0259451U (en) |
-
1988
- 1988-10-21 JP JP13735888U patent/JPH0259451U/ja active Pending
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