JPH0197232U - - Google Patents
Info
- Publication number
- JPH0197232U JPH0197232U JP19365787U JP19365787U JPH0197232U JP H0197232 U JPH0197232 U JP H0197232U JP 19365787 U JP19365787 U JP 19365787U JP 19365787 U JP19365787 U JP 19365787U JP H0197232 U JPH0197232 U JP H0197232U
- Authority
- JP
- Japan
- Prior art keywords
- thin
- generating portion
- strain
- pressure
- sensor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は第１図の平面図、第３図は従来より一般に使
用されている従来例の構成説明図、第４図は第３
図の平面図である。
１……センサアセンブリ、１１……センサチツ
プ、１１１……感圧部、１１１１……薄肉起歪部
、１１１２……ゲージ、１２……ガラス基板、２
……筐体部、３……絶縁溝。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
The figure is a plan view of Fig. 1, Fig. 3 is an explanatory diagram of the configuration of a conventional example commonly used in the past, and Fig. 4 is a plan view of Fig. 3.
FIG. DESCRIPTION OF SYMBOLS 1... Sensor assembly, 11... Sensor chip, 111... Pressure sensitive part, 1111... Thin strain generating part, 1112... Gauge, 12... Glass substrate, 2
...Housing part, 3...Insulation groove.
Claims (1)
該薄肉起歪部の表面近くに熱拡散あるいはイオン
注入により作成されたゲージとよりなる感圧部を
備える半導体からなるセンサチツプとを具備する
半導体圧力センサにおいて、 前記センサチツプの前記薄肉起歪部の外側に同
心閉曲線状に設けられた絶縁溝を具備したことを
特徴とする半導体圧力センサ。[Claims for Utility Model Registration] A semiconductor comprising a thin-walled strain-generating portion that generates stress in response to measurement pressure, and a pressure-sensitive portion consisting of a gauge made by thermal diffusion or ion implantation near the surface of the thin-walled strain-generating portion. 1. A semiconductor pressure sensor comprising: a sensor chip comprising: an insulating groove provided in a concentric closed curve shape on the outside of the thin strain-generating portion of the sensor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19365787U JPH0197232U (en) | 1987-12-21 | 1987-12-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19365787U JPH0197232U (en) | 1987-12-21 | 1987-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0197232U true JPH0197232U (en) | 1989-06-28 |
Family
ID=31484438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19365787U Pending JPH0197232U (en) | 1987-12-21 | 1987-12-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0197232U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007057491A (en) * | 2005-08-26 | 2007-03-08 | Tokai Rika Co Ltd | Sensor |
-
1987
- 1987-12-21 JP JP19365787U patent/JPH0197232U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007057491A (en) * | 2005-08-26 | 2007-03-08 | Tokai Rika Co Ltd | Sensor |
| JP4574496B2 (en) * | 2005-08-26 | 2010-11-04 | 株式会社東海理化電機製作所 | Sensor device |
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