JPS645137U - - Google Patents
Info
- Publication number
- JPS645137U JPS645137U JP9985787U JP9985787U JPS645137U JP S645137 U JPS645137 U JP S645137U JP 9985787 U JP9985787 U JP 9985787U JP 9985787 U JP9985787 U JP 9985787U JP S645137 U JPS645137 U JP S645137U
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- substrate
- semiconductor
- sensor
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図、第３図は第１図の動作説明図、第４図は第１
図の製作説明図、第５図は本考案の他の実施例の
構成説明図、第６図は従来より一般に使用されて
いる従来例の構成説明図である。
１……受圧台、３……基板、３１……凹部、４
１……凹部、４２……ダイアフラム部、４３……
導圧室、５……ピエゾ抵抗ゲージ、６……センサ
チツプ、６１……絶縁溝。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
Fig. 3 is an explanatory diagram of the operation of Fig. 1, Fig. 4 is an explanatory diagram of the operation of Fig. 1.
FIG. 5 is a diagram for explaining the construction of another embodiment of the present invention, and FIG. 6 is a diagram for explaining the construction of a conventional example that has been commonly used. 1... Pressure receiving base, 3... Board, 31... Recess, 4
1... recessed part, 42... diaphragm part, 43...
Pressure chamber, 5... piezoresistance gauge, 6... sensor chip, 61... insulation groove.
Claims (1)
サチツプと、該センサチツプに設けられ該センサ
チツプにダイアフラム部を形成し前記基板と導圧
室を構成する凹部と、前記ダイアフラム部に設け
られたピエゾ抵抗ゲージとを具備する半導体圧力
センサにおいて、 前記センサチツプの側周面に設けられ力あるい
は熱の伝達を阻止するリング状の絶縁溝を具備し
たことを特徴とする半導体圧力センサ。[Claims for Utility Model Registration] A substrate, a sensor chip made of a semiconductor and provided on the substrate, a recess provided in the sensor chip and forming a diaphragm portion in the sensor chip and forming a pressure chamber with the substrate, and the diaphragm portion. A semiconductor pressure sensor comprising: a piezoresistance gauge provided on a semiconductor pressure sensor, comprising: a ring-shaped insulating groove provided on a side circumferential surface of the sensor chip to prevent transmission of force or heat;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9985787U JPS645137U (en) | 1987-06-29 | 1987-06-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9985787U JPS645137U (en) | 1987-06-29 | 1987-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS645137U true JPS645137U (en) | 1989-01-12 |
Family
ID=31327405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9985787U Pending JPS645137U (en) | 1987-06-29 | 1987-06-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS645137U (en) |
-
1987
- 1987-06-29 JP JP9985787U patent/JPS645137U/ja active Pending
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