JPS6122369U - semiconductor pressure sensor - Google Patents
semiconductor pressure sensorInfo
- Publication number
- JPS6122369U JPS6122369U JP10735184U JP10735184U JPS6122369U JP S6122369 U JPS6122369 U JP S6122369U JP 10735184 U JP10735184 U JP 10735184U JP 10735184 U JP10735184 U JP 10735184U JP S6122369 U JPS6122369 U JP S6122369U
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- semiconductor pressure
- single crystal
- crystal substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の一実施例になる半導体圧力センサの縦
断面図、第２図は上記半導体圧カセンサの斜視図である
。
図中、１・・・・・・シリコン単結晶基板、２・・・・
・・グイヤフラム、３・・・・・・半導体ケージ抵抗、
５・曲・電極、６・・・・・・ゲル状のシリコーン絶縁
材。FIG. 1 is a longitudinal sectional view of a semiconductor pressure sensor according to an embodiment of the present invention, and FIG. 2 is a perspective view of the semiconductor pressure sensor. In the figure, 1... silicon single crystal substrate, 2...
・・Guiaflam, 3・・・・Semiconductor cage resistor,
5. Curved electrode, 6... Gel-like silicone insulation material.
Claims (1)
ムを有するシリコン単結晶基板からなる半導体圧カセン
サにおいて、上記単結晶基板表面をゲル状のシリンーン
絶縁材で被覆することを特徴とする半導体圧カセンサ。A semiconductor pressure sensor comprising a silicon single crystal substrate having a diaphragm on which an impurity-diffused semiconductor gauge resistor is formed, characterized in that the surface of the single crystal substrate is covered with a gel-like silicone insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10735184U JPS6122369U (en) | 1984-07-16 | 1984-07-16 | semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10735184U JPS6122369U (en) | 1984-07-16 | 1984-07-16 | semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6122369U true JPS6122369U (en) | 1986-02-08 |
Family
ID=30666598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10735184U Pending JPS6122369U (en) | 1984-07-16 | 1984-07-16 | semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6122369U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57171344U (en) * | 1981-04-21 | 1982-10-28 | ||
| JPS6340819A (en) * | 1986-08-06 | 1988-02-22 | Olympia Kogyo Kk | Pulsating flow sensor for fluid |
-
1984
- 1984-07-16 JP JP10735184U patent/JPS6122369U/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57171344U (en) * | 1981-04-21 | 1982-10-28 | ||
| JPS6329313Y2 (en) * | 1981-04-21 | 1988-08-08 | ||
| JPS6340819A (en) * | 1986-08-06 | 1988-02-22 | Olympia Kogyo Kk | Pulsating flow sensor for fluid |
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