JPS60125752U - semiconductor pressure sensitive element - Google Patents
semiconductor pressure sensitive elementInfo
- Publication number
- JPS60125752U JPS60125752U JP1336684U JP1336684U JPS60125752U JP S60125752 U JPS60125752 U JP S60125752U JP 1336684 U JP1336684 U JP 1336684U JP 1336684 U JP1336684 U JP 1336684U JP S60125752 U JPS60125752 U JP S60125752U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- sensitive element
- pressure sensitive
- semiconductor pressure
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の半導体感圧素子が使用された圧力センサ
を示す概略断面図、第２図は第１図に示される圧力セン
サに使用された従来の半導体感圧素子の構成を示す概略
断面図、第３図は本考案に係る半導体感圧素子の一例構
成を示す概略断面図である。
図中、３′は半導体感圧素子、４はダイアフラム部、５
は支持部、１１はゲージ抵抗領域、１２は絶縁層、１３
は電極部、２０は半導体層である。Fig. 1 is a schematic cross-sectional view showing a pressure sensor using a conventional semiconductor pressure-sensitive element, and Fig. 2 is a schematic cross-section showing the configuration of the conventional semiconductor pressure-sensitive element used in the pressure sensor shown in Fig. 1. 3 are schematic cross-sectional views showing an example structure of a semiconductor pressure-sensitive element according to the present invention. In the figure, 3' is a semiconductor pressure sensitive element, 4 is a diaphragm part, and 5 is a semiconductor pressure sensitive element.
11 is a gauge resistance region; 12 is an insulating layer; 13 is a support portion;
is an electrode portion, and 20 is a semiconductor layer.
Claims (1)
ム部の一方の平坦面側にゲージ抵抗領域が形成されると
ともに、上記一方の平坦面を被覆する酸化膜から成る絶
縁層が配され、該絶縁層上に上記半導体基体を形成する
半導体素材と同種の半導体素材による半導体層が配され
て、上記絶縁層を上記ダイアフラム部と上記半導体層で
挟むように構成されたことを特徴とする半導体感圧素子
。A gauge resistance region is formed on one flat surface side of a diaphragm portion formed to have a predetermined thickness on a semiconductor substrate, and an insulating layer made of an oxide film is disposed to cover the one flat surface, A semiconductor characterized in that a semiconductor layer made of the same type of semiconductor material as the semiconductor material forming the semiconductor substrate is disposed on the insulating layer, and the insulating layer is sandwiched between the diaphragm part and the semiconductor layer. Pressure sensitive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1336684U JPS60125752U (en) | 1984-02-02 | 1984-02-02 | semiconductor pressure sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1336684U JPS60125752U (en) | 1984-02-02 | 1984-02-02 | semiconductor pressure sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60125752U true JPS60125752U (en) | 1985-08-24 |
Family
ID=30497306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1336684U Pending JPS60125752U (en) | 1984-02-02 | 1984-02-02 | semiconductor pressure sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60125752U (en) |
-
1984
- 1984-02-02 JP JP1336684U patent/JPS60125752U/en active Pending
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