JPS6144541U - Semiconductor capacitive pressure sensor - Google Patents
Semiconductor capacitive pressure sensorInfo
- Publication number
- JPS6144541U JPS6144541U JP13034084U JP13034084U JPS6144541U JP S6144541 U JPS6144541 U JP S6144541U JP 13034084 U JP13034084 U JP 13034084U JP 13034084 U JP13034084 U JP 13034084U JP S6144541 U JPS6144541 U JP S6144541U
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- fixed electrode
- capacitive pressure
- semiconductor capacitive
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図、第２図は従来より一般に使用されている従来例
の構成説明図で、第１図は平面図、第２図は側断面図、
第３図は第２図の要部拡大図、第４図は第１図の動作説
明図、第５図は本考案の一実施例の構成説明図である。
１・・・半導体基板、１１・・・圧力導入孔、１２・・
・増幅器からのリード、１３・・・絶縁膜、１４・・・
パッド、２・・・エビタキシャル成長層、３・・・増幅
器、４・・・絶縁カバー、４１・・・空隙、４２・・・
凹部、４３・・・盲穴、５・・・固定電極、６・・・リ
ード、７１．７２・・・リード層、８１．８２・・・外
部端子。Figures 1 and 2 are explanatory diagrams of the configuration of a conventional example that has been commonly used. Figure 1 is a plan view, Figure 2 is a side sectional view,
3 is an enlarged view of the main part of FIG. 2, FIG. 4 is an explanatory diagram of the operation of FIG. 1, and FIG. 5 is an explanatory diagram of the configuration of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 11... Pressure introduction hole, 12...
・Lead from amplifier, 13... Insulating film, 14...
Pad, 2...Evitaxial growth layer, 3...Amplifier, 4...Insulating cover, 41...Gap, 42...
Recessed portion, 43...Blind hole, 5...Fixed electrode, 6...Lead, 71.72...Lead layer, 81.82...External terminal.
Claims (1)
アフラムに対抗して固定電極板に固定電極が設けられ該
固定電極の電極リードと前記増巾器のリードとが接合部
において接続される半導体容量形圧カセンサにおいて、
前記接合部分における固定電極板又は半導体基板の肉厚
を薄くしたことを特徴とする半導体容量形圧カセンサ。A semiconductor capacitive type pressure sensor in which an amplifier and a diaphragm are formed on a semiconductor substrate, a fixed electrode is provided on a fixed electrode plate opposite to the diaphragm, and an electrode lead of the fixed electrode and a lead of the amplifier are connected at a joint part. At Kasensa,
A semiconductor capacitive pressure sensor characterized in that the thickness of the fixed electrode plate or the semiconductor substrate at the joint portion is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13034084U JPS6144541U (en) | 1984-08-28 | 1984-08-28 | Semiconductor capacitive pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13034084U JPS6144541U (en) | 1984-08-28 | 1984-08-28 | Semiconductor capacitive pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6144541U true JPS6144541U (en) | 1986-03-24 |
Family
ID=30688952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13034084U Pending JPS6144541U (en) | 1984-08-28 | 1984-08-28 | Semiconductor capacitive pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144541U (en) |
-
1984
- 1984-08-28 JP JP13034084U patent/JPS6144541U/en active Pending
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