JPS58173254U - semiconductor pressure transducer - Google Patents
semiconductor pressure transducerInfo
- Publication number
- JPS58173254U JPS58173254U JP6947182U JP6947182U JPS58173254U JP S58173254 U JPS58173254 U JP S58173254U JP 6947182 U JP6947182 U JP 6947182U JP 6947182 U JP6947182 U JP 6947182U JP S58173254 U JPS58173254 U JP S58173254U
- Authority
- JP
- Japan
- Prior art keywords
- pressure transducer
- semiconductor pressure
- conductive film
- insulating film
- transducer according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来例を示す図、第２図、第３図は本考案の実
施例を示す図である。
１・・・・・・基板、２・・・・・・ゲージ抵抗素子、
３・・・・・・シリコン膜、４・・・・・・電極穴、５
・・・・・・電極、１１・・・・・・金属膜、１２・・
・・・・電極部穴。FIG. 1 is a diagram showing a conventional example, and FIGS. 2 and 3 are diagrams showing an embodiment of the present invention. 1... Board, 2... Gauge resistance element,
3...Silicon film, 4...Electrode hole, 5
...Electrode, 11...Metal film, 12...
...Electrode hole.
Claims (1)
シリコン単結晶基板上の少なくとも一部に第１絶縁膜、
導電膜、第２絶縁膜が積層されたことを特徴とする半導
体圧力変換器。 ２ 実用新案登録請求の範囲第１項において該導電膜が
該第１絶縁膜及び該第２絶縁膜のいずれの上にも形成さ
れたことを特徴とする半導体圧力変換器。 ３ 実用新案登録請求の範囲第１項において該導電膜が
ゲージ抵抗素子用電極及びシールド用導電膜からなるこ
とを特徴とする半導体圧力変換器。 ４ 実用新案登録請求の範囲第２項および第３項におい
て前記シールド用導電膜の膜厚と前記ゲ−ジ抵抗素子電
極の膜厚が異なることを特徴とする半導体圧力変換器。 ′５ 実用新案登録請求の範囲第４項において該シール
ド用導電膜の少なくとも一部上に該第２絶縁膜が積層さ
れていることを特徴とする半導体圧力変換器。[Claims for Utility Model Registration] 1. A first insulating film on at least a portion of a silicon single crystal substrate having a strain-sensitive portion and on which a gauge resistance element is selectively formed;
A semiconductor pressure transducer characterized in that a conductive film and a second insulating film are laminated. 2. A semiconductor pressure transducer according to claim 1, characterized in that the conductive film is formed on both the first insulating film and the second insulating film. 3. A semiconductor pressure transducer according to claim 1, characterized in that the conductive film comprises an electrode for a gauge resistance element and a conductive film for a shield. 4 Utility Model Registration A semiconductor pressure transducer according to claims 2 and 3, characterized in that the thickness of the shield conductive film is different from the thickness of the gauge resistance element electrode. '5 The semiconductor pressure transducer according to claim 4 of the utility model registration, characterized in that the second insulating film is laminated on at least a portion of the shielding conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6947182U JPS58173254U (en) | 1982-05-14 | 1982-05-14 | semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6947182U JPS58173254U (en) | 1982-05-14 | 1982-05-14 | semiconductor pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58173254U true JPS58173254U (en) | 1983-11-19 |
Family
ID=30079199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6947182U Pending JPS58173254U (en) | 1982-05-14 | 1982-05-14 | semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58173254U (en) |
-
1982
- 1982-05-14 JP JP6947182U patent/JPS58173254U/en active Pending
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