JPS5892746U - semiconductor pressure transducer - Google Patents

semiconductor pressure transducer

Info

Publication number
JPS5892746U
JPS5892746U JP18624881U JP18624881U JPS5892746U JP S5892746 U JPS5892746 U JP S5892746U JP 18624881 U JP18624881 U JP 18624881U JP 18624881 U JP18624881 U JP 18624881U JP S5892746 U JPS5892746 U JP S5892746U
Authority
JP
Japan
Prior art keywords
pressure transducer
substrate
semiconductor pressure
diaphragm
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18624881U
Other languages
Japanese (ja)
Other versions
JPS6246277Y2 (en
Inventor
山内　治男
Original Assignee
株式会社山武
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社山武 filed Critical 株式会社山武
Priority to JP18624881U priority Critical patent/JPS5892746U/en
Publication of JPS5892746U publication Critical patent/JPS5892746U/en
Application granted granted Critical
Publication of JPS6246277Y2 publication Critical patent/JPS6246277Y2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図ａおよびｂは従来の半導体圧力変換器の一例を示
す平面図および側断面図、第２図ａおよびｂは本考案の
一実施例を示す平面図および側断面図、第３図〜第８図
はそれぞれ本考案の他の実施例における静電接合用電極
を示す平面図、第９図ａおよびｂは本考案の更に他の実
施例を示す平・面図および断面図である。1A and 1B are a plan view and a side sectional view showing an example of a conventional semiconductor pressure transducer, FIGS. 2A and 2B are a plan view and a side sectional view showing an embodiment of the present invention, and FIGS. FIG. 8 is a plan view showing an electrostatic bonding electrode according to another embodiment of the present invention, and FIGS. 9a and 9b are a plan view and a sectional view showing still another embodiment of the present invention.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ピエゾ抵抗領域を有するダイヤフラムおよびこのダイヤ
フラム周縁部を支持する拘束部からなる半導体基板を前
記拘束部において高温で固体電解質として作用する絶縁
材からなる支持部に静電接合してなる半導体圧力変換器
において、前記基板、周縁部に設ける静電接合用電極も
しくはこれに接続して前記基板内に形彫する高導電性の
接続部を、当該基板と前記支持部との接合面全体に対し
てほぼ均等な分布となるように配置したことを特徴とす
る半導体圧力変換器。In a semiconductor pressure transducer, a semiconductor substrate consisting of a diaphragm having a piezoresistive region and a restraining part that supports the periphery of this diaphragm is electrostatically bonded to a supporting part made of an insulating material that acts as a solid electrolyte at high temperature in the restraining part. , an electrostatic bonding electrode provided on the peripheral edge of the substrate or a highly conductive connecting portion connected to the electrode and die-cut into the substrate is applied almost evenly over the entire bonding surface between the substrate and the supporting portion. A semiconductor pressure transducer characterized in that the pressure transducer is arranged so as to have a uniform distribution.
JP18624881U 1981-12-16 1981-12-16 semiconductor pressure transducer Granted JPS5892746U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18624881U JPS5892746U (en) 1981-12-16 1981-12-16 semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18624881U JPS5892746U (en) 1981-12-16 1981-12-16 semiconductor pressure transducer

Publications (2)

Publication Number Publication Date
JPS5892746U true JPS5892746U (en) 1983-06-23
JPS6246277Y2 JPS6246277Y2 (en) 1987-12-12

Family

ID=29988026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18624881U Granted JPS5892746U (en) 1981-12-16 1981-12-16 semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS5892746U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150480A (en) * 1983-02-04 1984-08-28 Toshiba Corp Semiconductor pressure conversion device
JP2013002942A (en) * 2011-06-16 2013-01-07 Honda Motor Co Ltd Force sensor chip

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131892A (en) * 1978-04-05 1979-10-13 Hitachi Ltd Semiconductor pressure converter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131892A (en) * 1978-04-05 1979-10-13 Hitachi Ltd Semiconductor pressure converter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150480A (en) * 1983-02-04 1984-08-28 Toshiba Corp Semiconductor pressure conversion device
JP2013002942A (en) * 2011-06-16 2013-01-07 Honda Motor Co Ltd Force sensor chip

Also Published As

Publication number Publication date
JPS6246277Y2 (en) 1987-12-12

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