JPS6030554U - semiconductor pressure sensor - Google Patents
semiconductor pressure sensorInfo
- Publication number
- JPS6030554U JPS6030554U JP12191483U JP12191483U JPS6030554U JP S6030554 U JPS6030554 U JP S6030554U JP 12191483 U JP12191483 U JP 12191483U JP 12191483 U JP12191483 U JP 12191483U JP S6030554 U JPS6030554 U JP S6030554U
- Authority
- JP
- Japan
- Prior art keywords
- diffused resistor
- pressure sensor
- semiconductor pressure
- output
- wheatstone bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
図は本考案の一実施例を示し、第１図は断面図、第２図
は回路図である。
４ａ・・・・・・ダイヤフラム部、４ｂ・・・・・・周
囲環状基部、７・・・・・・第１拡散抵抗、１０・・・
・・・第２拡散抵抗。The figures show one embodiment of the present invention, with FIG. 1 being a sectional view and FIG. 2 being a circuit diagram. 4a...Diaphragm part, 4b...Surrounding annular base, 7...First diffused resistor, 10...
...Second diffusion resistance.
Claims (1)
対する信号を出力するためにホイートストンブリッジに
構成された第１拡散抵抗と、厚みの大なる周囲環状基部
に形成され、周囲温度に基づ°く信号を出力するために
ホイートストンブリッジに構成された第２拡散抵抗とを
備え、上記第１拡散抵抗および第２拡散抵抗は、はぼ同
一の温度特性を有することを特徴とする半導体圧力セン
サ。A first diffused resistor is formed in a thin diaphragm portion and configured as a Wheatstone bridge to output a signal corresponding to the pressure to be measured, and a first diffused resistor is formed in a thick surrounding annular base to output a signal corresponding to the measured pressure. and a second diffused resistor configured in a Wheatstone bridge for outputting a signal, wherein the first diffused resistor and the second diffused resistor have substantially the same temperature characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12191483U JPS6030554U (en) | 1983-08-04 | 1983-08-04 | semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12191483U JPS6030554U (en) | 1983-08-04 | 1983-08-04 | semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6030554U true JPS6030554U (en) | 1985-03-01 |
Family
ID=30278857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12191483U Pending JPS6030554U (en) | 1983-08-04 | 1983-08-04 | semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6030554U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010203784A (en) * | 2009-02-27 | 2010-09-16 | Mitsubishi Electric Corp | Semiconductor pressure sensor, and method of manufacturing the same |
| JP2018146297A (en) * | 2017-03-02 | 2018-09-20 | セイコーインスツル株式会社 | Pressure sensor |
-
1983
- 1983-08-04 JP JP12191483U patent/JPS6030554U/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010203784A (en) * | 2009-02-27 | 2010-09-16 | Mitsubishi Electric Corp | Semiconductor pressure sensor, and method of manufacturing the same |
| US8327712B2 (en) | 2009-02-27 | 2012-12-11 | Mitsubishi Electric Corporation | Semiconductor pressure sensor having symmetrical structure, and manufacturing method thereof |
| JP2018146297A (en) * | 2017-03-02 | 2018-09-20 | セイコーインスツル株式会社 | Pressure sensor |
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