JPS6398666U - - Google Patents
Info
- Publication number
- JPS6398666U JPS6398666U JP19503386U JP19503386U JPS6398666U JP S6398666 U JPS6398666 U JP S6398666U JP 19503386 U JP19503386 U JP 19503386U JP 19503386 U JP19503386 U JP 19503386U JP S6398666 U JPS6398666 U JP S6398666U
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- diaphragm
- measurement pressure
- pressure sensor
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の１実施例を示す構成図、第２
図は第１図に示す半導体圧力センサを作る工程を
示す工程図、第３図は従来の半導体圧力センサの
構成を示す縦断面図、第４図は第３図に示す半導
体圧力センサを作る工程を示す工程図、第５図は
第３図に示す半導体圧力センサの問題点を説明す
る説明図である。
１０，２７……ダイヤフラム、１１……凹部、
１２……起歪部、１４，２４……ゲージ、１７…
…基板、１８，２９……筐体、２１……シリコン
基板、２２……貫通孔、２３……多結晶シリコン
基板、２５，２６，３１……酸化膜、３２……多
結晶シリコン層、Ｓ……単結晶化層。
Figure 1 is a configuration diagram showing one embodiment of the present invention;
The figure is a process diagram showing the process of making the semiconductor pressure sensor shown in Fig. 1, Fig. 3 is a vertical cross-sectional view showing the configuration of a conventional semiconductor pressure sensor, and Fig. 4 is the process of making the semiconductor pressure sensor shown in Fig. 3. FIG. 5 is an explanatory diagram illustrating problems with the semiconductor pressure sensor shown in FIG. 3. 10, 27...diaphragm, 11...recess,
12... Strain generating part, 14, 24... Gauge, 17...
... Substrate, 18, 29 ... Housing, 21 ... Silicon substrate, 22 ... Through hole, 23 ... Polycrystalline silicon substrate, 25, 26, 31 ... Oxide film, 32 ... Polycrystalline silicon layer, S ...Single crystallized layer.
Claims (1)
ン基板と、多結晶シリコン基板の一方の面の所定
位置が単結晶化されて単結晶化層とされここに前
記測定圧力の印加により抵抗値が変化するピエゾ
抵抗素子が形成され他方の面に酸化膜が形成され
たダイアフラムと、このダイアフラムの他方の面
と前記シリコン基板とを接合したことを特徴とす
る半導体圧力センサ。 A silicon substrate with a through hole for introducing measurement pressure, and a predetermined position on one side of a polycrystalline silicon substrate are single-crystallized to form a single-crystal layer, and the resistance value changes upon application of the measurement pressure. 1. A semiconductor pressure sensor comprising: a diaphragm on which a piezoresistive element is formed and an oxide film formed on the other surface; and the other surface of the diaphragm is bonded to the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19503386U JPS6398666U (en) | 1986-12-18 | 1986-12-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19503386U JPS6398666U (en) | 1986-12-18 | 1986-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6398666U true JPS6398666U (en) | 1988-06-25 |
Family
ID=31152547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19503386U Pending JPS6398666U (en) | 1986-12-18 | 1986-12-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6398666U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121478A (en) * | 1984-11-19 | 1986-06-09 | Sanyo Electric Co Ltd | Manufacture of semiconductor pressure sensor |
-
1986
- 1986-12-18 JP JP19503386U patent/JPS6398666U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121478A (en) * | 1984-11-19 | 1986-06-09 | Sanyo Electric Co Ltd | Manufacture of semiconductor pressure sensor |