JPS61188368U - - Google Patents
Info
- Publication number
- JPS61188368U JPS61188368U JP7302885U JP7302885U JPS61188368U JP S61188368 U JPS61188368 U JP S61188368U JP 7302885 U JP7302885 U JP 7302885U JP 7302885 U JP7302885 U JP 7302885U JP S61188368 U JPS61188368 U JP S61188368U
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- silicon
- semiconductor substrate
- semiconductor
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- -1 nitrogen ions Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の平面図、第３図は第１図の工程
図、第４図は第１図の動作説明図、第５図は本考
案の他の実施例の構成説明図、第６図、第７図は
本考案の別の実施例の構成説明図で、第６図は側
断面図、第７図は平面図、第８図、第９図、第１
０図は従来より一般に使用されている従来例の構
成説明図で、第８図は測断面図、第９図は平面図
、第１０図は要部詳細説明図である。
１……支持台、２……ダイアフラム、２１……
基準室、３……剪断形ゲージ、３１……パシベー
シヨン膜、３１１……酸化シリコン膜、３１２，
３１３……窒化膜、３２……電極、３３……低抵
抗層、３４……応力緩衝層、４……回路部分、５
……チツプ、１０……本考案装置。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
2 is a plan view of FIG. 1, FIG. 3 is a process diagram of FIG. 1, FIG. 4 is an explanatory diagram of the operation of FIG. 1, and FIG. 5 is an explanatory diagram of the configuration of another embodiment of the present invention. 6 and 7 are configuration explanatory diagrams of another embodiment of the present invention, in which FIG. 6 is a side sectional view, FIG. 7 is a plan view, FIG. 8, FIG. 9, and FIG.
FIG. 0 is an explanatory diagram of the configuration of a conventional example that has been generally used, FIG. 8 is a cross-sectional view, FIG. 9 is a plan view, and FIG. 10 is a detailed explanatory diagram of the main parts. 1... Support stand, 2... Diaphragm, 21...
Reference chamber, 3... Shear type gauge, 31... Passivation film, 311... Silicon oxide film, 312,
313...Nitride film, 32...Electrode, 33...Low resistance layer, 34...Stress buffer layer, 4...Circuit part, 5
... Chip, 10 ... Device of the present invention.
Claims (1)
素子が形成され前記シリコン半導体基板表面がパ
シベーシヨン膜で覆われている半導体圧力センサ
において、前記半導体基板表面のシリコンと窒素
イオンとを直接反応させて形成された窒化膜と、
前記パシベーシヨン膜の外表面に前記ピエゾ抵抗
素子に少くとも対向して設けられ前記シリコン半
導体と同材料よりなる応力緩衝層とを具備したこ
とを特徴とする半導体圧力センサ。 (2) 前記応力緩衝層が所定電位に保たれたこと
を特徴とする実用新案登録請求の範囲第１項記載
の半導体圧力センサ。[Claims for Utility Model Registration] (1) A semiconductor pressure sensor in which a piezoresistive element is formed on the surface of a silicon semiconductor substrate and the surface of the silicon semiconductor substrate is covered with a passivation film, in which silicon and nitrogen ions on the surface of the semiconductor substrate A nitride film formed by directly reacting with
A semiconductor pressure sensor comprising: a stress buffer layer formed of the same material as the silicon semiconductor and provided on the outer surface of the passivation film so as to face at least the piezoresistive element. (2) The semiconductor pressure sensor according to claim 1, wherein the stress buffer layer is maintained at a predetermined potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7302885U JPS61188368U (en) | 1985-05-17 | 1985-05-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7302885U JPS61188368U (en) | 1985-05-17 | 1985-05-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61188368U true JPS61188368U (en) | 1986-11-25 |
Family
ID=30612003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7302885U Pending JPS61188368U (en) | 1985-05-17 | 1985-05-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61188368U (en) |
-
1985
- 1985-05-17 JP JP7302885U patent/JPS61188368U/ja active Pending