JPS63110053U - - Google Patents
Info
- Publication number
- JPS63110053U JPS63110053U JP108687U JP108687U JPS63110053U JP S63110053 U JPS63110053 U JP S63110053U JP 108687 U JP108687 U JP 108687U JP 108687 U JP108687 U JP 108687U JP S63110053 U JPS63110053 U JP S63110053U
- Authority
- JP
- Japan
- Prior art keywords
- piezoresistive element
- conductivity type
- type
- semiconductor
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Description
第１図は本考案の一実施例の要部構成説明図、
第２図、第３図は第１図の工程説明図、第４図、
第５図は従来より一般に使用されている従来例の
構成説明図で、第４図は正面図、第５図は平面図
、第６図、第７図は第４図の要部構成説明図、第
８図は第４図の動作説明図でＡは高温時、Ｂは低
温時の動作説明図である。
１……支持台、２……ダイアフラム、２１……
基準室、３……剪断形ゲージ、３１１……酸化膜
、４１……入力リード、４２……配線アルミ、４
３……出力リード。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
Figures 2 and 3 are process explanatory diagrams of Figure 1, Figure 4,
Fig. 5 is an explanatory diagram of the configuration of a conventional example that has been commonly used. Fig. 4 is a front view, Fig. 5 is a plan view, and Figs. 6 and 7 are explanatory diagrams of the main part configuration of Fig. 4. , FIG. 8 is an explanatory diagram of the operation of FIG. 4, where A is an explanatory diagram of the operation at a high temperature and B is an explanatory diagram of the operation at a low temperature. 1... Support stand, 2... Diaphragm, 21...
Reference chamber, 3... Shear type gauge, 311... Oxide film, 41... Input lead, 42... Wiring aluminum, 4
3... Output lead.
Claims (1)
基板と、該基板の表面に形成され他方の伝導形の
半導体よりなるピエゾ抵抗素子と、該ピエゾ抵抗
素子に駆動電流を流す入力リードと、前記ピエゾ
抵抗素子より出力を取り出す出力リードとを具備
する半導体圧力センサにおいて、前記入力リード
と前記出力リードとが前記ピエゾ抵抗素子と同じ
伝導形のポリシリコンよりなるリードで構成され
た事を特徴とする半導体圧力センサ。 a silicon semiconductor substrate of one conductivity type, n-type or p-type, a piezoresistive element formed on the surface of the substrate and made of a semiconductor of the other conductivity type, an input lead for passing a drive current to the piezoresistive element; A semiconductor pressure sensor comprising an output lead for extracting an output from a piezoresistive element, characterized in that the input lead and the output lead are made of polysilicon of the same conductivity type as the piezoresistive element. Semiconductor pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP108687U JPS63110053U (en) | 1987-01-08 | 1987-01-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP108687U JPS63110053U (en) | 1987-01-08 | 1987-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63110053U true JPS63110053U (en) | 1988-07-15 |
Family
ID=30778662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP108687U Pending JPS63110053U (en) | 1987-01-08 | 1987-01-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63110053U (en) |
-
1987
- 1987-01-08 JP JP108687U patent/JPS63110053U/ja active Pending
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