JPS6346974B2 - - Google Patents

Info

Publication number
JPS6346974B2
JPS6346974B2 JP54120680A JP12068079A JPS6346974B2 JP S6346974 B2 JPS6346974 B2 JP S6346974B2 JP 54120680 A JP54120680 A JP 54120680A JP 12068079 A JP12068079 A JP 12068079A JP S6346974 B2 JPS6346974 B2 JP S6346974B2
Authority
JP
Japan
Prior art keywords
exposed
wafer
mirror
exposure
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54120680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5645024A (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP12068079A priority Critical patent/JPS5645024A/ja
Publication of JPS5645024A publication Critical patent/JPS5645024A/ja
Publication of JPS6346974B2 publication Critical patent/JPS6346974B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP12068079A 1979-09-21 1979-09-21 Lithography apparatus Granted JPS5645024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12068079A JPS5645024A (en) 1979-09-21 1979-09-21 Lithography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12068079A JPS5645024A (en) 1979-09-21 1979-09-21 Lithography apparatus

Publications (2)

Publication Number Publication Date
JPS5645024A JPS5645024A (en) 1981-04-24
JPS6346974B2 true JPS6346974B2 (enrdf_load_stackoverflow) 1988-09-20

Family

ID=14792278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12068079A Granted JPS5645024A (en) 1979-09-21 1979-09-21 Lithography apparatus

Country Status (1)

Country Link
JP (1) JPS5645024A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3270459D1 (en) * 1981-12-31 1986-05-15 Ibm A method and apparatus for providing a uniform illumination of an area
JPS58194339A (ja) * 1982-05-10 1983-11-12 Nec Corp Ｘ線マスクの作製方法
JPS60178627A (ja) * 1984-02-24 1985-09-12 Canon Inc Ｘ線転写装置
JP2611762B2 (ja) * 1986-12-01 1997-05-21 キヤノン株式会社 Ｓｏｒ露光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863046U (enrdf_load_stackoverflow) * 1971-11-16 1973-08-10
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern
JPS5393371A (en) * 1977-01-28 1978-08-16 Hitachi Ltd Device for drawing scan pattern

Also Published As

Publication number Publication date
JPS5645024A (en) 1981-04-24

Similar Documents

Publication Publication Date Title
EP0083394A2 (en) A method and apparatus for providing a uniform illumination of an area
JPH1070058A (ja) Ｘ線縮小投影露光装置及びこれを用いた半導体デバイス製造装置
JP2979667B2 (ja) 反射型のｘ線露光用マスク
US5268951A (en) X-ray beam scanning method for producing low distortion or constant distortion in x-ray proximity printing
EP0109193A2 (en) X-ray lithographic system
JPS6346974B2 (enrdf_load_stackoverflow)
JPH0196600A (ja) Ｘ線露光装置
JP3047983B2 (ja) 微細パターン転写方法およびその装置
JPS58215621A (ja) １「あ」１プロジエクシヨンアライナ
JP3275269B2 (ja) 露光装置、デバイス製造方法、及び該方法で製造されたデバイス
JP3013341B2 (ja) Ｘ線照射用光学系及びそれを用いたｘ線投影露光装置
JP3236012B2 (ja) Ｘ線露光装置
JPS61276223A (ja) Ｘ線露光方法
JP2731959B2 (ja) Ｘ線露光装置
JP2868028B2 (ja) Ｘ線照射装置
JPH04120717A (ja) Ｘ線露光装置
JP3254771B2 (ja) Ｘ線縮小投影露光装置および方法
JPS58222522A (ja) プロジエクシヨンアライナ
JP3284299B2 (ja) ブラインド装置
JPS63236321A (ja) Ｘ線露光装置
JP3715984B2 (ja) Ｘ線縮小投影露光方法、ｘ線縮小投影露光装置及びこれを用いた半導体デバイス製造方法
JP3055232B2 (ja) 半導体装置の製造方法
JP2891737B2 (ja) 反射装置及び転写装置
JP3733209B2 (ja) 露光装置
JPH0385719A (ja) 露光方法