JPS6346974B2 - - Google Patents
Info
- Publication number
- JPS6346974B2 JPS6346974B2 JP54120680A JP12068079A JPS6346974B2 JP S6346974 B2 JPS6346974 B2 JP S6346974B2 JP 54120680 A JP54120680 A JP 54120680A JP 12068079 A JP12068079 A JP 12068079A JP S6346974 B2 JPS6346974 B2 JP S6346974B2
- Authority
- JP
- Japan
- Prior art keywords
- exposed
- wafer
- mirror
- exposure
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Description
【発明の詳細な説明】 本発明はＸ線露光方法に関する。[Detailed description of the invention] The present invention relates to an X-ray exposure method.
従来のステツプ・アンドリピート方式の露光法
に於ては、各ステツプ内ではウエハに対し光源は
各々静置されているのが通例である。 In the conventional step-and-repeat exposure method, each light source is usually placed stationary relative to the wafer within each step.
そのためこの種のものでは装置の大きさを一定
以下に小さくできないと云う欠点がある。特にシ
ンクロトロンによるＸ線露光では、Ｘ線が一定方
向に指向性があるにもかかわらずフイールド領域
を一定の大きさに定める必要のある場合装置の長
さを大きくとる必要があると云う欠点がある。 Therefore, this type of device has the disadvantage that the size of the device cannot be reduced below a certain level. In particular, X-ray exposure using a synchrotron has the disadvantage that even though the X-rays are directional in a certain direction, if the field area needs to be set to a certain size, the length of the device must be large. be.
それゆえ、本発明はＸ線露光装置を小形にする
ことができるＸ線露光方法を提供することにあ
る。以下図面を用いて本発明を具体的に説明す
る。 Therefore, an object of the present invention is to provide an X-ray exposure method that allows an X-ray exposure apparatus to be made compact. The present invention will be specifically explained below using the drawings.
シンクロトロンによるＸ線露光装置を例にとる
と第１図に示すごとくシンクロトロンの電子軌道
１から輻射されるＸ線は、角度θという一方向に
指向性をもつた点線源から放射され、マスク２を
通してウエハ３上に図形露光される。この場合ス
テツプ・アンドリピートでウエハを露光操作する
と有利ではあるが、ウエハのステツプアンド・リ
ピートのみでは線源から例えば５ｍ程はなして５
mm幅程度のストライプ状の露光をつなぎ合わせる
こととなる。 Taking an X-ray exposure device using a synchrotron as an example, as shown in Fig. 1, the X-rays radiated from the electron orbit 1 of the synchrotron are radiated from a point source with directivity in one direction at an angle θ. 2 onto the wafer 3. In this case, it is advantageous to expose the wafer in a step-and-repeat manner, but if you only step-and-repeat the wafer, it is necessary to expose the wafer at a distance of, for example, 5 meters from the radiation source.
This involves joining together stripe-like exposures about mm wide.
上記のステツプアンドリピートでウエハを露光
操作する方式において第２図のごとくＸ線反射ミ
ラー４を線源近くに設置しそのミラー４を上下又
はθ1方向に振ることによりＸ線をストライプ状マ
スクの範囲内で走査あるいはステツプ走査するこ
とにより、線源と被露光物との距離を第１図の場
合に較べて小さくすることができる。Ｘ線の反射
ミラーに関しては、入射角を小さくとり全反射さ
せることにより100Å程度あるいはそれ以上のソ
フト（Soft）Ｘ線ではAu蒸着ミラーによりほぼ
100％近い反射率を得ることができることは知ら
れている（ただし反射角は小さい）。この様にす
ることにより線源から被露光物との距離は1/2以
下と小さくとることができ、装置が小さくでき
る。 In the step-and-repeat wafer exposure operation described above, an X-ray reflecting mirror 4 is installed near the radiation source as shown in Fig. 2, and by swinging the mirror 4 up and down or in the θ1 direction, X-rays are applied to a striped mask. By scanning or step scanning within the range, the distance between the radiation source and the object to be exposed can be made smaller than in the case of FIG. Regarding X-ray reflecting mirrors, by keeping the incident angle small and allowing total reflection, soft X-rays of about 100 Å or more can be almost completely reflected by Au evaporated mirrors.
It is known that nearly 100% reflectance can be obtained (however, the reflection angle is small). By doing this, the distance from the radiation source to the object to be exposed can be reduced to 1/2 or less, and the apparatus can be made smaller.
以上詳述したことからあきらかのように本発明
により露光装置の小型化が計れる。 As is clear from the above detailed description, the present invention allows the exposure apparatus to be miniaturized.
本発明の他の実施態様としては、ウエハの１ス
テツプ（1/2ステツプ送り×２回）間にマスクを
２枚入れかえる機構も考えられる。この場合はパ
ターンのつなぎの考慮が必要である。本実施例に
よると１枚のウエハに異なるパターンを露光する
ことも可能となる。 As another embodiment of the present invention, a mechanism may be considered in which two masks are exchanged during one wafer step (1/2 step feed x 2 times). In this case, it is necessary to consider the connection of patterns. According to this embodiment, it is also possible to expose different patterns on one wafer.
第１図は従来のＸ線露光装置を説明するための
概略図、第２図は本発明の露光方法を用いたＸ線
露光装置を説明するための概略図である。
１……シンクロトロンの電子軌道、２……マス
ク、３……ウエハ、４……ミラー。
FIG. 1 is a schematic diagram for explaining a conventional X-ray exposure apparatus, and FIG. 2 is a schematic diagram for explaining an X-ray exposure apparatus using the exposure method of the present invention. 1... synchrotron electron orbit, 2... mask, 3... wafer, 4... mirror.
Claims (1)
光を行うＸ線露光方法であつて、被露光物と露光
源との間の露光源側に前記露光源から放射される
Ｘ線を放射するミラーを配置し、前記被露光物と
前記露光源との間の被露光物側にマスクを配置
し、前記Ｘ線を前記ミラーを動作させることによ
り前記マスクの範囲で前記Ｘ線を走査して前記被
露光物をストライプ状に露光し、かつ、前記ミラ
ーを動作させることによる走査を前記被露光物を
ステツプ送りした位置ごとに行うことを特徴とす
るＸ線露光方法。1 An X-ray exposure method in which an object to be exposed is subjected to step-and-repeat exposure, in which a mirror that emits X-rays emitted from the exposure source is placed on the exposure source side between the object to be exposed and the exposure source. A mask is placed on the side of the exposed object between the exposed object and the exposure source, and the X-rays are scanned within the range of the mask by operating the mirror to expose the exposed object. An X-ray exposure method characterized in that an object is exposed in a stripe pattern, and scanning is performed by operating the mirror at each position of the object to be exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12068079A JPS5645024A (en) | 1979-09-21 | 1979-09-21 | Lithography apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12068079A JPS5645024A (en) | 1979-09-21 | 1979-09-21 | Lithography apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645024A JPS5645024A (en) | 1981-04-24 |
| JPS6346974B2 true JPS6346974B2 (en) | 1988-09-20 |
Family
ID=14792278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12068079A Granted JPS5645024A (en) | 1979-09-21 | 1979-09-21 | Lithography apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645024A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0083394B1 (en) * | 1981-12-31 | 1986-04-09 | International Business Machines Corporation | A method and apparatus for providing a uniform illumination of an area |
| JPS58194339A (en) * | 1982-05-10 | 1983-11-12 | Nec Corp | Preparation of x-ray mask |
| JPS60178627A (en) * | 1984-02-24 | 1985-09-12 | Canon Inc | X-ray transfer device |
| JP2611762B2 (en) * | 1986-12-01 | 1997-05-21 | キヤノン株式会社 | SOR exposure equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226902A (en) * | 1975-08-25 | 1977-02-28 | Hitachi Ltd | Method of making photomask pattern |
| JPS5393371A (en) * | 1977-01-28 | 1978-08-16 | Hitachi Ltd | Device for drawing scan pattern |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4863046U (en) * | 1971-11-16 | 1973-08-10 |
-
1979
- 1979-09-21 JP JP12068079A patent/JPS5645024A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226902A (en) * | 1975-08-25 | 1977-02-28 | Hitachi Ltd | Method of making photomask pattern |
| JPS5393371A (en) * | 1977-01-28 | 1978-08-16 | Hitachi Ltd | Device for drawing scan pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5645024A (en) | 1981-04-24 |
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