JP3275269B2 - Exposure apparatus, device manufacturing method, and device manufactured by the method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus having a mechanism for controlling the amount of exposure of a photosensitive substrate, and more particularly to a projection exposure apparatus having a relatively complicated illumination light optical system such as a so-called multi-tilt illumination system. It is suitable to be applied to.

[0002]

2. Description of the Related Art When manufacturing a semiconductor device or a liquid crystal display device using photolithography technology, an exposure apparatus for exposing a reticle pattern directly or at a predetermined ratio to a photosensitive material coated on a wafer by reducing the pattern at a predetermined ratio. Is used. In general, an appropriate exposure amount is determined for a photosensitive material applied to a wafer, and therefore, in a conventional exposure apparatus, a beam splitter is arranged in an illumination optical system of exposure light, and the exposure light branched by the beam splitter is used. By monitoring the amount of light, the amount of exposure on the wafer is monitored. Then, when the exposure amount on the wafer reaches the appropriate exposure amount, the exposure of the current shot area of the wafer is stopped, whereby the exposure amount is controlled.

FIG. 4 shows a projection exposure apparatus having a conventional exposure amount control mechanism. In FIG. 4, reference numeral 1 denotes a laser light source for generating KrF excimer laser light (wavelength: 248 nm). Brewster windows 2 and 3 are attached to both ends. A reflecting mirror 5 is disposed outside one Brewster window 2 via an etalon 4, and a semi-transmitting mirror 6 is disposed outside the other Brewster window 3.

An etalon 4 is provided to narrow the bandwidth of the wavelength of the natural oscillation of the laser light source 1. Although the etalon 4 is shown here, the band may be narrowed by a grating, a prism, or the like. Further, since the Brewster windows 2 and 3 are substantially non-reflective for polarized light of a specific angle, only light of this polarized component is amplified between the reflecting mirror 5 and the semi-transmitting mirror 6. As a result, the laser light source 1 oscillates with linearly polarized light, and a substantially linearly polarized laser beam LB0 is emitted to the outside via the semi-transmissive mirror 6. The excimer laser light is a pulsed laser light, and the oscillation state of the laser light source 1 and the power of the emitted laser beam are controlled by a laser power supply 7.

The laser beam LB0 emitted from the semi-transmissive mirror 6 is shaped into a parallel light beam having a desired cross-sectional shape by a beam shaping optical system including lenses 8 and 9, and the laser beam LB1 emitted from the beam shaping optical system. Is 1
The light is converted from linearly polarized light into circularly polarized light by the 波長 wavelength plate 10, reflected by the reflecting mirror 11, and then enters the fly-eye lens 12. The exit surface of the fly-eye lens 12 is
A secondary light source is formed, and laser light from the planar secondary light source is incident on the beam splitter 13 in a superimposed manner, and the laser light transmitted through the beam splitter 13 is transmitted to the first relay lens 14, the reticle blind 15, the second The reticle R is illuminated with a uniform illuminance distribution via the relay lens 16, the reflecting mirror 17, and the main condenser lens 18. The reticle blind 15 is conjugate with the reticle R with respect to the second relay lens 16 and the main condenser lens 18, and the reticle blind 15 sets an illumination field on the reticle R.

Under the laser beam, the pattern of the reticle R is imaged on the wafer W by the both-side (or one-sided) telecentric projection optical system PL, and the pattern of the reticle R is projected and exposed on the wafer W. The exit surface (secondary light source forming surface) of the fly-eye lens 12 and the pupil (entrance pupil) surface Ep of the projection optical system PL are conjugate. 19 is the wafer W
Indicates an XY stage for positioning the wafer W in a plane perpendicular to the optical axis of the projection optical system PL, and the wafer stage 19 for positioning the wafer W in the optical axis direction of the projection optical system PL. It is composed of a Z stage and the like.

In the vicinity of the wafer W on the wafer stage 19, an irradiation amount monitor 20 composed of a photoelectric conversion element is arranged. The height of the light receiving surface of the irradiation amount monitor 20 is provided so as to substantially match the height of the surface of the wafer W. Reference numeral 21 denotes a main control system for controlling the operation of the entire apparatus. The photoelectric conversion signal of the irradiation amount monitor 20 is supplied to a main control system 23.
Further, a movable mirror 22 is mounted on the wafer stage 19, and the laser beam from the laser interferometer 23 is reflected by the movable mirror 22 so that the laser interferometer 2
3 measures the coordinates of the wafer stage 19. Main control system 2
1 positions the wafer stage 19 via the driving device 24 based on the coordinates and the like obtained by the laser interferometer 23.

On the other hand, the laser light reflected by the beam splitter 13 immediately after the fly-eye lens 12 enters a light receiving surface of an integrator sensor 26 composed of a photoelectric conversion element via a condenser lens 25. Due to the condenser lens 25, the light receiving surface of the integrator sensor 26 is arranged at a position conjugate with the reticle blind 15 as a field stop on the main optical path. Therefore, the light receiving surface of the integrator sensor 26 is arranged on a surface conjugate with the exposure surface of the wafer W, and the photoelectric conversion signal of the integrator sensor 26 is also supplied to the main control system 21. When performing exposure on the wafer W, the integrator sensor 26 generates a photoelectric conversion signal proportional to the power (peak output of pulsed light) of the pulsed laser beam emitted from the laser light source 1,
By integrating the photoelectric conversion signal by the main control system 21, the integrated exposure amount for the wafer W can be monitored.

[0009]

As described above, in the conventional projection exposure apparatus, a part of the laser beam emitted from the fly-eye lens 12 is taken out by the beam splitter 13 arranged obliquely in the main optical path. The extracted laser light is made substantially non-uniform in illumination by the condenser lens 25 and is irradiated on the integrator sensor 26 at a position conjugate with the wafer W. However, arranging the beam splitter 13 obliquely on the main optical path and further arranging the condenser lens 25 for forming a conjugate plane has disadvantages in that the illumination optical system is complicated and large.

Particularly, recently, in order to further increase the resolution of the projection optical system PL, a so-called modified light source method (multiple tilt illumination) in which a reticle is illuminated with exposure light composed of a plurality of light beams whose principal rays are tilted with respect to the optical axis. Law) has been proposed. The illumination optical system of the modified light source method is more complicated than a conventional ordinary illumination optical system, and it is difficult to arrange the beam splitter 13 for the integrator sensor 26 obliquely in the main optical path. is there.

Further, in the projection exposure apparatus as shown in FIG. 4, the reflectance of the beam splitter 13 for splitting the light for the integrator sensor 26 slightly changes with time, and the output signal from the integrator sensor 26 and the actual And the proportional coefficient with the amount of light irradiated on the wafer W changes,
There is a possibility that the actual exposure amount on the wafer W cannot be accurately monitored.

In view of the foregoing, the present invention provides an exposure apparatus that transfers a mask pattern onto a photosensitive substrate under a photosensitive energy ray without using a large space on the optical path of the energy ray. It is an object of the present invention to provide a monitoring mechanism capable of monitoring the intensity of the energy ray with a simple structure and having a relatively small change in the monitoring amount with time.

[0013]

An exposure apparatus according to the present invention includes an exposure beam generating means, and an exposure beam generating means for the exposure beam.
An exposure apparatus having an illumination system for illuminating a mask with exposure beam generated in stages, is disposed within the illumination system, the
A fluorescent light generating means for generating fluorescent light in accordance with the intensity of the exposure beam in the illumination system is provided. Further, the device manufacturing method of the present invention includes a photosensitive substrate using the exposure apparatus of the present invention.
Exposure of the plate, using the photosensitive substrate exposed by the exposure device
To manufacture devices . Further, the device of the present invention is manufactured by the device manufacturing method of the present invention.

[0014]

[0015]

[0016]

The exposure apparatus of the present invention widely includes not only an exposure apparatus using a so-called multiple tilt illumination method but also an exposure apparatus using a normal illumination method or an annular illumination method. In the present invention, the intensity of the predetermined energy ray (IL) as the exposure beam or the first beam is monitored by the amount of fluorescence from the transmission type fluorescence generating means (40A, 40B) as the light emitting means . Therefore, as compared with a case where a beam splitter for splitting the energy ray is arranged obliquely on the optical path of the energy ray and a condenser lens for forming a plane conjugate with the photosensitive substrate (W) is arranged. And the monitor mechanism is simple and its energy ray (IL)
The space occupied on the optical path can be reduced. Further, in the present invention, since the change with time in the fluorescence generation efficiency of the light emitting means or the change with time in the second beam generation efficiency is relatively small, the exposure amount on the photosensitive substrate can always be accurately monitored.

[0017]

[0018]

[0019]

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an exposure apparatus according to the present invention will be described below with reference to FIGS. In this example, the present invention is applied to a projection exposure apparatus that illuminates a reticle by a multiple tilt illumination method (modified light source method) disclosed in, for example, JP-A-4-101148 and JP-A-4-180613. . FIG. 1 shows a projection exposure apparatus according to the present embodiment. In FIG. 1, illumination light (exposure light) IL generated from a light source 27 composed of a mercury lamp is condensed at a second focal point of an elliptical mirror 28 and then bent. After passing through the mirror 29 and the input lens 30, it becomes a substantially parallel light beam.

Illumination light emitted from the input lens 30 enters a polyhedral prism 31 having a quadrangular pyramid-shaped (pyramid-shaped) concave portion. The four luminous fluxes split and emitted by, enter the fly-eye lenses 33A to 33D as optical integrators via the relay lens 32, respectively. Although only the fly-eye lenses 33A and 33B are shown in FIG. 1, the two fly-eye lenses 3 sandwich the optical axis in a direction perpendicular to the plane of FIG.
3C and 33D are arranged. A planar secondary light source is formed on the rear (reticle side) focal plane b of each of the fly-eye lenses 33A to 33D.

The light beams emitted from the rear focal plane b of the fly-eye lenses 33A to 33D are respectively shielded by light shielding plates 36A to 36A.
36D (only the light-shielding plates 36A and 36B are shown in FIG. 1) and the transmission-type fluorescent integrator 4
0A to 40D (FIG. 1 shows a fluorescent integrator 40A,
(Only 40B appears). Each of the fluorescent integrators 40A to 40D has a predetermined transmittance with respect to the illumination light IL, and generates fluorescence in proportion to the intensity of the illumination light IL passing therethrough within a saturation limit.
The fluorescent integrators 40A to 40D are provided with a phosphor (for example, a compound such as zinc, manganese, or silver,
Platinum cyanide, quinine sulfate, benzene, aniline, fluorescein, eosin, etc.) are applied thinly. Fluorite, lead glass, etc. are also used for the fluorescent integrator 40.
You may use as A-40D. All the light beams emitted from the fly-eye lenses 33A to 33D pass through the corresponding fluorescent integrators 40A to 40D, respectively. It should be noted that the fluorescence generated from the fluorescent integrators 40A to 40D has a small light amount and the auxiliary condenser lens 41, the mirror 42, the main condenser lens 43, and the optical characteristics of the projection optical system PL indicate that the wavelength of the fluorescence is a transmittance to the wafer W. Is extremely low, and the fluorescence is in a wavelength band where the photosensitivity of the wafer W to the resist is weak.
The resist on the wafer W is not exposed by the fluorescence.

The fluorescent integrators 40A to 40A
The illumination light transmitted through D is collected by the auxiliary condenser lens 41, the mirror 42, and the main condenser lens 43, respectively, and illuminates the reticle R with substantially uniform illuminance.
The 0th-order diffracted light and the 1st-order diffracted light generated from the pattern area PA of the reticle R are condensed on the wafer W by the both-side telecentric projection optical system PL, and the pattern of the reticle R is reduced to a predetermined size in each shot area of the wafer W. Magnification M
Is imaged. The wafer W is placed on the wafer stage 19 via the wafer holder 45,
An irradiation amount monitor 20 is fixed near the upper wafer W.

FIG. 3 shows these fluorescent integrators 40A.
FIG. 3 is a front view of the 40D as viewed from the reticle side.
As shown in (1), when the orthogonal coordinate system is represented by an x-axis and a y-axis, the fly-eye lenses 33A to 33D are arranged along an axis that intersects the x-axis and the y-axis at 45 °, respectively.
Fluorescent integrators 40A to 40D are arranged to cover the fly-eye lenses 33A to 33D, respectively. Such an arrangement is such that the line and space pattern 51 arranged along the x-axis and the line and space pattern arranged along the y-axis on the reticle R assume no reflection on the mirror 42. 5
2 is particularly effective, the resolution is good, and the depth of focus of the projection optical system PL is deep. The center positions of the fly-eye lenses 33A to 33D (the positions of the centers of gravity of the light quantity distribution) are uniquely determined according to the pitch and the periodic direction of the reticle pattern.

Returning to FIG. 1, fly-eye lenses 33A to 33A
The 3D reticle-side focal plane b is a Fourier transform plane of the pattern formation plane of the reticle R, that is, a pupil plane EP of the projection optical system PL.
It is arranged in the vicinity of a plane conjugate with. In addition, each of the fly-eye lenses 33A to 33D is held by a movable member, and can be independently moved in a plane perpendicular to the optical axis AX. Similarly, the light shielding plates 36A to 36D are also fixed to the movable member, and when the positions of the fly-eye lenses 33A to 33D change, the positions of the light shielding plates 36A to 36D in a plane perpendicular to the optical axis AX are correspondingly changed. Adjusted. Therefore, the light shielding plates 36A to 36D are connected to the respective fly-eye lenses 33A.
It functions as a variable aperture stop of ~ 33D. The fly-eye lenses 33A to 33D and the light shielding members 36A to 36D
Is controlled by the drive system 37. The σ values (coherency factors) of the fly-eye lenses 33A to 33D are set to about 0.1 to 0.3.

In the optical path from the relay lens 32 to the fly-eye lens 33A, two filter plates 34A and 35A having different transmittances are disposed so as to be able to move forward and backward. That is, in the optical path from the relay lens 32 to the fly-eye lens 33A, the illumination light does not pass through the filter plate at all,
Or, it passes through one or two filter plates. Similarly, from the relay lens 32 to the fly-eye lenses 33A to 33A
Two filter plates 34B, 35B to 34D and 35D having different transmittances (the filter plates 34C, 35C and 34D and 35D are not shown in FIG. 1) are disposed in the middle of the optical path to 3D so as to be able to move forward and backward.

Filter plates 34A, 35A to 34D, 3
5D is formed of a light absorbing glass plate or a wire mesh mesh filter. The transmittance of each of the filter plates 34A to 34D is, for example, 99%, and the transmittance of each of the filter plates 35A to 35D is, for example, 98%.
%, Two filter plates (eg, filter plate 3
4A and 35A) realize four types of transmittance. That is, the transmittance when no filter plate is used is 100%, the transmittance when only the filter plate 34A is used is 99%, and the transmittance when only the filter plate 35A is used is 98%, and two filter plates are used. The transmission when using 34A and 35A is about 97%. The advancing and retreating operations of these filter plates 34A, 35A to 34D, 35D are also controlled by the drive system 37.

Reference numeral 38 denotes a main control system for controlling the entire operation. An operator sends a control command to the main control system 38 from a keyboard 39 or the like. Further, an output signal of the irradiation amount monitor 20 is supplied to a main control system 38, and the main control system 38
7 is also controlled. Furthermore, fluorescent integrator 4
In the direction away from the optical axis AX with respect to 0A to 40D, photoelectric conversion elements 44A to 44D such as a photomultiplier or a photodiode (the photoelectric conversion element 44A in FIG. 1).
And 44B only appear), and the photoelectric conversion signals S1 to S4 of the photoelectric conversion elements 44A to 44D are supplied to the main control system 38. At this time, for example, the optical axis A is set so that the fluorescent light from the fluorescent integrator 40A does not enter the other photoelectric conversion elements 44B to 44D of the photoelectric conversion element 44A.
A light-shielding plate or the like may be arranged near X. The fluorescent integrators 40A to 40D and the photoelectric conversion elements 44A to 44D
A light guide such as an optical fiber for efficiently transmitting the fluorescent light may be disposed between the light guides D and D.

The exposure operation of this embodiment will be described. First, the main control system 38 detects the intensity of the fluorescence in the fluorescent integrators 40A to 40D from the photoelectric conversion signals of the photoelectric conversion elements 44A to 44D, respectively, as a preparatory step for the exposure of the wafer W, whereby the fly-eye lens 33A ~ 33
The intensity of the illumination light emitted from D is individually measured. Based on this measurement result, the main control system 38
A, 35A to 34D, and 35D are controlled so as to equalize the intensity of illumination light emitted from the fly-eye lenses 33A to 33D. Note that the output signals of the photoelectric conversion elements 44A to 44D may be calibrated in advance with, for example, signals obtained by photoelectrically converting illumination light from the fly-eye lenses 33A to 33D using, for example, reference photoelectric conversion elements having a large light receiving surface. Good.

In this case, each of the fly-eye lenses 33A to 33A
Since 3D is arranged axially symmetrically at 90 ° intervals with respect to the optical axis AX, the position of the center of gravity of the illuminance distribution of the image on the pupil plane EP of the projection optical system PL of the illumination light from each of the fly-eye lenses 33A to 33D. The sum of the vectors (direction center of gravity) is 0. Therefore, the deviation of the telecentricity of the illumination light with respect to the projection optical system PL is zero, and the imaging characteristics are in the best state. However, depending on the directionality of the pattern formed on the reticle R or the existence ratio of the pattern extending in each direction, etc.
The value of the ratio of the intensity of the illumination light from each of the fly-eye lenses 33A to 33D may be set to an arbitrary value.

Next, the main control system 38 sets, for example, the dose monitor 20 on the wafer stage 19 to the exposure area of the projection optical system PL, and outputs the output signal of the dose monitor 20 and each photoelectric conversion element 44A at this time. The value of the ratio to the sum of the output signals of .about.44B is determined in advance. Then, when actually exposing each shot area of the wafer W, the main control system 38 calculates the integrated exposure energy to the shot area of the wafer W from the sum of the output signals of the photoelectric conversion elements 44A to 44D. The exposure is stopped when the integrated exposure energy reaches an appropriate exposure amount. As a result, the exposure amount for each shot area of the wafer W is controlled.

In FIG. 1, for example, a large-area fluorescent integrator 50 composed of a transmission-type fluorescent plate may be disposed between the auxiliary condenser lens 41 and the mirror 42. By detecting the fluorescence from the fluorescent integrator 50, the amount of all the illumination light traveling toward the wafer W can be monitored.

Next, for reference, the reason why the resolution is improved and the depth of focus is deepened by the modified light source method (multiple tilt illumination method) will be described with reference to FIG. However, for the sake of simplicity, the description will be made using two-beam oblique illumination. 2, it is assumed that the pattern 47 drawn on the reticle R is a line-and-space pattern having a pitch P in a direction parallel to the paper surface of FIG. First, the illumination light L1 from the reticle-side focal plane b of the fly-eye lens 33A is
After that, the light enters the reticle R at an incident angle ψ. Accordingly, from the pattern 47 of the reticle R, the 0th-order diffracted light D0,
± 1st order diffracted light Dp, Dm and higher order diffracted light components
It is emitted in a direction determined according to the pitch of the pattern.

Since the illumination light L1 is incident on the reticle R at an angle に with respect to the optical axis AX of the projection optical system PL which is telecentric on both sides, the zero-order diffracted light D0 is also inclined at an angle ψ with respect to the optical axis AX. The -1st-order diffracted light Dm is emitted from the pattern 47 at an angle θm inclined toward the optical axis AX with respect to the 0th-order diffracted light D0, and the + 1st-order diffracted light Dp is separated from the optical axis AX with respect to the 0th-order diffracted light D0. Angle θp
It is injected only tilted. Therefore, the + 1st-order diffracted light Dp travels in the direction of the angle (θp + ψ) with respect to the optical axis AX, and −1
The second-order diffracted light Dm has an angle (θm−) opposite to the optical axis AX.
Proceed in the direction of i). Assuming that the wavelength of the illumination light is λ, the diffraction angles θp and θm are as follows. sin (θp + ψ) −sinψ = λ / P (1) sin (θm−ψ) + sinψ = λ / P (2)

Here, it is assumed that both the +1 diffracted light Dp and the -1st order diffracted light Dm are transmitted through the pupil 48 of the projection optical system PL. Then, when the pattern 47 of the reticle R becomes finer and the pitch P becomes smaller and the diffraction angle increases, firstly the + 1st-order diffracted light Dp traveling in the direction of the angle (θp + ψ) can pass through the stop of the pupil plane 48 of the projection optical system PL. Disappears. That is, assuming that the numerical aperture on the incident side of the projection optical system PL is NAr, the relationship becomes sin (θp + ψ)> NAr.
However, even in this case, sin (θm−ψ) <NAr holds for the −1st-order diffracted light Dm, and the −1st-order diffracted light Dm passes through the pupil 48 of the projection optical system PL.

Accordingly, an interference fringe of the 0th-order diffracted light D0 and the -1st-order diffracted light Dp, that is, an image of the pattern 47 of the reticle R is formed on the wafer W. The resolution limit at this time is when the following equation is satisfied. sin (θm−ψ) = NAr (3) Accordingly, the transferable minimum value _Pmin of the pitch P of the pattern 47 of the reticle R is as follows. NAr + sinψ = λ / P _min (4) P _min = λ / (NAr + sinψ) (5)

As an example, sinψ in equation (5) is set to 0.5
If it is determined to be about × NAr, the minimum transferable pitch P _min of the pattern 47 of the reticle R is as follows. P _min = λ / (NAr + 0.5NAr) = 2λ / (3NAr) (6) On the other hand, the illuminance distribution on the pupil 48 of the projection optical system PL is the optical axis A.
In the case of the conventional illumination optical system which is a circular area centered on X, the minimum transferable pitch P _min is about λ / NAr. Accordingly, it can be seen that a higher resolution than the conventional exposure apparatus can be obtained by the oblique illumination.

Next, the 0th-order diffracted light D0 and the -1st-order diffracted light Dm
The reason why the depth of focus is increased by forming an image on the wafer W using the above will be described. In FIG. 2, assuming that the magnification of the projection optical system PL from the reticle R to the wafer W is M and the incident angle of the 0th-order diffracted light D0 to the wafer W is α0, sinα0 = sinψ / M. Further, assuming that the incident angle of the -1st-order diffracted light Dm is αm, sinαm = sin
(Θm−ψ) / M. In this case, sin @ sin
(Θm−ψ) holds. Therefore, when the defocus amount of the exposure surface of the wafer W and [Delta] F, 0-order is wavefront aberration caused by diffracted light D0 ΔF · sin ² α0 / ² and -1 is a wavefront aberration caused by diffracted light Dm ΔF · sin ² αm / ²
And the depth of focus increases.

As described above, when the present invention is applied to the projection exposure apparatus of the multi-tilt illumination system, the intensity of the illumination light from each secondary light source can be increased without increasing the complexity and size of the complicated illumination optical system. Can be monitored individually, and the effect is great. However, the present invention can also be applied to a normal illumination type exposure apparatus as shown in FIG. In the case of FIG. 4, for example, exposure amount control can be performed only by disposing one fluorescent integrator in an extremely small space between the fly-eye lens 12 and the first relay lens 14. Further, the present invention can be similarly applied to a case where the exposure amount is controlled by a proximity type exposure apparatus. As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.

[0040]

According to the present invention , the exposure beam or the first beam
For example, it is only necessary to dispose a relatively thin fluorescent light generating means substantially perpendicular to the optical axis in the optical path of a predetermined energy ray as a beam, so that it is relatively simple without occupying a large space on the optical path of the energy ray. The configuration has the advantages that the intensity of the energy beam can be monitored and that the monitored amount has relatively little change with time. Further, according to the present invention, since the temporal change of the fluorescence generation efficiency of the light emitting means or the temporal change of the second beam generation efficiency is relatively small, it is possible to always accurately monitor the exposure amount on the photosensitive substrate.

[0041]

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing an entire projection exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating the principle of a modified light source method (multiple tilt illumination method).

FIG. 3 is a front view showing an arrangement of a fly-eye lens 33A and the like and a fluorescent integrator 40A and the like in FIG. 1;

FIG. 4 is a configuration diagram showing an entire conventional projection exposure apparatus.

[Explanation of symbols]

 R Reticle PL Projection optical system W Wafer 20 Irradiation amount monitor 27 Light source 31 Polyhedral prism 32 Relay lens 33A, 33B Fly-eye lens 34A, 35A, 34B, 35B Filter plate 36A, 36B Light shield plate 38 Main control system 40A, 40B Fluorescent integrator 43 main condenser lens 44A, 44B photoelectric conversion element

Claims (10)

(57) [Claims] 1. An exposure beam generating means , comprising : an exposure beam generating means.
Illuminating the mask with the exposure beam generated by the
An exposure apparatus having an illumination system, arranged in the illumination system, an exposure apparatus characterized by having a fluorescent generating means for generating a fluorescence in response to the intensity of the exposure beam in the illumination system. 2. The exposure apparatus according to claim 1, wherein the exposure apparatus is configured to irradiate the mask with a pattern of a mask illuminated by the exposure beam.
Exposes the photosensitive substrate and emits the fluorescent light in accordance with the intensity of the exposure beam in the illumination system.
A first signal for outputting a signal based on the fluorescence generated by the generating means;
And signal output means, in response to the signal outputted from the first signal output means, before
Control means for controlling the amount of exposure to the photosensitive substrate.
An exposure apparatus characterized by the following. 3. An exposure apparatus according to claim 2, wherein said fluorescence generating means irradiates an exposure beam onto said photosensitive substrate.
During exposure, the intensity of the exposure beam in the illumination system
And the first signal output means emits an exposure beam on the photosensitive substrate.
During the irradiation, outputs a signal based on the fluorescence, and the control unit controls the irradiation of the exposure beam onto the photosensitive substrate.
Controlling the amount of exposure to the photosensitive substrate during the
Exposure equipment. 4. The exposure apparatus according to claim 2, wherein
The control means may include an exposure beam irradiated on the photosensitive substrate.
Light on the photosensitive substrate according to the integrated exposure energy of the system.
Controlling the amount of exposure of the emitted exposure beam.
Exposure equipment. 5. An exposure apparatus according to claim 2, 3 or 4.
A is a signal corresponding to the light amount of the exposure beam in the vicinity of the photosensitive substrate
A second signal output means for outputting the second signal and a signal output from the first signal output means and the second signal.
Operator for calculating the ratio to the signal output from the signal output means
An exposure apparatus comprising: a step; 6. The exposure apparatus according to any one of claims 1 to 5, wherein the fluorescent generating means comprises a transmission member that transmits the exposure beam, the intensity of the exposure beam transmitted through the translucent over-member < an exposure apparatus for generating the fluorescence according to the exposure light. 7. The exposure apparatus according to any one of claims 1 to 6, wherein the illumination system pupil plane, on a surface in the vicinity thereof, the illumination system pupil plane conjugate with the surface, Or an optical member for increasing a light amount distribution of the exposure beam on a surface in the vicinity thereof in accordance with a pattern formed on the mask in a region decentered from the optical axis more than near the optical axis of the illumination system. Exposure apparatus characterized by the above-mentioned. 8. The exposure apparatus according to claim 7 , wherein a plurality of regions decentered from the optical axis are provided, and the optical member includes a plurality of regions for the exposure beam in each of the plurality of regions. An exposure apparatus wherein the intensity is individually controlled. 9. The dew drop according to claim 1, wherein
Expose the photosensitive substrate using an optical device, and expose with the exposure device
A device manufacturing method, comprising manufacturing a device using the photosensitive substrate . 10. A device manufactured by the device manufacturing method according to claim 9 .