JPS5645024A - Lithography apparatus - Google Patents

Lithography apparatus

Info

Publication number
JPS5645024A
JPS5645024A JP12068079A JP12068079A JPS5645024A JP S5645024 A JPS5645024 A JP S5645024A JP 12068079 A JP12068079 A JP 12068079A JP 12068079 A JP12068079 A JP 12068079A JP S5645024 A JPS5645024 A JP S5645024A
Authority
JP
Japan
Prior art keywords
mirror
ray source
permits
mask
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12068079A
Other languages
Japanese (ja)
Other versions
JPS6346974B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12068079A priority Critical patent/JPS5645024A/en
Publication of JPS5645024A publication Critical patent/JPS5645024A/en
Publication of JPS6346974B2 publication Critical patent/JPS6346974B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To permit a lithography apparatus to be more compact by placing a mask and a mirror between an object to be exposed and a ray source, and swinging the mirror to perform lithography. CONSTITUTION:The X-ray radiated from an electron orbit 1 of a synchrotron are emitted from a ray source having a directivity of an angle theta, and applied through a mask 2 to a wafer 3. In this case, an X-ray reflecting mirror 4 is placed near the ray source, and swinged vertically or in the direction of theta1. This permits the X-rays to perform a scan or step-scan within the range of the stripe-shaped mask. Allowing the mirror 4 to totally reflect by making the incidence angle small permits an Au evaporated mirror to obtain a reflection power close to 100% for soft X-rays of the order of 100Angstrom or more. This permits the distance between the ray source and the object to be exposed to be less than half. Consequently, the apparatus can be more compact.
JP12068079A 1979-09-21 1979-09-21 Lithography apparatus Granted JPS5645024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12068079A JPS5645024A (en) 1979-09-21 1979-09-21 Lithography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12068079A JPS5645024A (en) 1979-09-21 1979-09-21 Lithography apparatus

Publications (2)

Publication Number Publication Date
JPS5645024A true JPS5645024A (en) 1981-04-24
JPS6346974B2 JPS6346974B2 (en) 1988-09-20

Family

ID=14792278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12068079A Granted JPS5645024A (en) 1979-09-21 1979-09-21 Lithography apparatus

Country Status (1)

Country Link
JP (1) JPS5645024A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118999A (en) * 1981-12-31 1983-07-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Apparatus for uniform irradiation in two- dimensional area
JPS58194339A (en) * 1982-05-10 1983-11-12 Nec Corp Preparation of x-ray mask
JPS63138732A (en) * 1986-12-01 1988-06-10 Canon Inc Exposure system
JPH0620927A (en) * 1984-02-24 1994-01-28 Canon Inc X-ray transfer apparatus and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863046U (en) * 1971-11-16 1973-08-10
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern
JPS5393371A (en) * 1977-01-28 1978-08-16 Hitachi Ltd Device for drawing scan pattern

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863046U (en) * 1971-11-16 1973-08-10
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern
JPS5393371A (en) * 1977-01-28 1978-08-16 Hitachi Ltd Device for drawing scan pattern

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118999A (en) * 1981-12-31 1983-07-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Apparatus for uniform irradiation in two- dimensional area
JPS58194339A (en) * 1982-05-10 1983-11-12 Nec Corp Preparation of x-ray mask
JPH0526188B2 (en) * 1982-05-10 1993-04-15 Nippon Electric Co
JPH0620927A (en) * 1984-02-24 1994-01-28 Canon Inc X-ray transfer apparatus and method
JPS63138732A (en) * 1986-12-01 1988-06-10 Canon Inc Exposure system

Also Published As

Publication number Publication date
JPS6346974B2 (en) 1988-09-20

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