JPS63216966A - スパツタタ−ゲツト - Google Patents

スパツタタ−ゲツト

Info

Publication number
JPS63216966A
JPS63216966A JP62049940A JP4994087A JPS63216966A JP S63216966 A JPS63216966 A JP S63216966A JP 62049940 A JP62049940 A JP 62049940A JP 4994087 A JP4994087 A JP 4994087A JP S63216966 A JPS63216966 A JP S63216966A
Authority
JP
Japan
Prior art keywords
target
block
thin film
metal
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62049940A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0371510B2 (enExample
Inventor
Miharu Fukazawa
深沢　美治
Mitsuo Kawai
光雄 河合
Hideo Ishihara
石原　秀夫
Takashi Yamanobe
山野辺　尚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12845019&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS63216966(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62049940A priority Critical patent/JPS63216966A/ja
Priority to US07/162,898 priority patent/US4842706A/en
Priority to EP88103310A priority patent/EP0281141B2/en
Priority to DE3854609T priority patent/DE3854609T3/de
Priority to KR1019880002359A priority patent/KR910007947B1/ko
Publication of JPS63216966A publication Critical patent/JPS63216966A/ja
Publication of JPH0371510B2 publication Critical patent/JPH0371510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP62049940A 1987-03-06 1987-03-06 スパツタタ−ゲツト Granted JPS63216966A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62049940A JPS63216966A (ja) 1987-03-06 1987-03-06 スパツタタ−ゲツト
US07/162,898 US4842706A (en) 1987-03-06 1988-03-02 Sputtering target
EP88103310A EP0281141B2 (en) 1987-03-06 1988-03-03 Sputtering target
DE3854609T DE3854609T3 (de) 1987-03-06 1988-03-03 Zerstäubungstarget.
KR1019880002359A KR910007947B1 (ko) 1987-03-06 1988-03-05 스퍼터링 타겟

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62049940A JPS63216966A (ja) 1987-03-06 1987-03-06 スパツタタ−ゲツト

Publications (2)

Publication Number Publication Date
JPS63216966A true JPS63216966A (ja) 1988-09-09
JPH0371510B2 JPH0371510B2 (enExample) 1991-11-13

Family

ID=12845019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62049940A Granted JPS63216966A (ja) 1987-03-06 1987-03-06 スパツタタ−ゲツト

Country Status (5)

Country Link
US (1) US4842706A (enExample)
EP (1) EP0281141B2 (enExample)
JP (1) JPS63216966A (enExample)
KR (1) KR910007947B1 (enExample)
DE (1) DE3854609T3 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150356A (ja) * 1989-11-02 1991-06-26 Hitachi Metals Ltd タングステンまたはモリブデンターゲットおよびその製造方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
JPH06143581A (ja) * 1992-11-05 1994-05-24 Xerox Corp インクジェット印字ヘッド
JP2898515B2 (ja) * 1993-07-15 1999-06-02 株式会社ジャパンエナジー モザイクターゲット
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JPH1180942A (ja) * 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
JP2924891B1 (ja) * 1998-05-15 1999-07-26 日本電気株式会社 スパッタリング装置
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
EP1099777A1 (en) * 1998-06-29 2001-05-16 Kabushiki Kaisha Toshiba Sputter target
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6698647B1 (en) 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
US6514358B1 (en) * 2000-04-05 2003-02-04 Heraeus, Inc. Stretching of magnetic materials to increase pass-through-flux (PTF)
US6585870B1 (en) * 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
JP5341292B2 (ja) * 2000-05-22 2013-11-13 キャボット コーポレイション ニオブスパッタ要素、ニオブ金属およびそれを含む物品
CN101042903B (zh) * 2002-02-25 2010-06-09 日矿金属株式会社 相变型存储器用溅射靶的制造方法
TWI258514B (en) * 2002-06-24 2006-07-21 Kobelco Res Inst Inc Silver alloy sputtering target and process for producing the same
DE10392142B4 (de) * 2003-06-23 2007-08-02 Kobelco Research Institute, Inc., Kobe Sputtertarget aus einer Silberlegierung und Verfahren zur Herstellung desselben
US20070007505A1 (en) * 2005-07-07 2007-01-11 Honeywell International Inc. Chalcogenide PVD components
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
EE05493B1 (et) * 2006-03-07 2011-12-15 Cabot Corporation Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
JP5731770B2 (ja) * 2010-08-23 2015-06-10 株式会社東芝 スパッタリングターゲットの製造方法及びスパッタリングターゲット
JP6438906B2 (ja) * 2016-04-11 2018-12-19 ミネベアミツミ株式会社 角度調整装置及び照明装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116835A (ja) * 1984-11-13 1986-06-04 Shinku Yakin Kk Ｌｓｉ又は超ｌｓｉ電極配線材料用スパツタリングタ−ゲツト
JPS61139637A (ja) * 1984-12-12 1986-06-26 Hitachi Metals Ltd スパツタ用タ−ゲツトとその製造方法
JPS61145829A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd モザイク状スパツタリングタ−ゲツトとその製造方法
JPS61145828A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd スパツタリングタ−ゲツトとその製造方法
JPS61272371A (ja) * 1985-05-29 1986-12-02 O C C:Kk スパツタリングタ−ゲツト
JPS6289863A (ja) * 1985-10-16 1987-04-24 Hitachi Metals Ltd スパッター用ターゲット部材およびその製造方法
JPS6289862A (ja) * 1985-10-16 1987-04-24 Hitachi Metals Ltd スパッター用ターゲット部材およびその製造方法
JPS62186511A (ja) * 1986-02-12 1987-08-14 Hitachi Metals Ltd タ−ゲツト部材
JPS63111172A (ja) * 1986-10-29 1988-05-16 Hitachi Metals Ltd タ−ゲツト材の製造方法
JPS63145771A (ja) * 1986-12-10 1988-06-17 Kasei Naoetsu:Kk スパツタリングタ−ゲツト

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145982A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
JPS59179783A (ja) * 1983-03-31 1984-10-12 Toshiba Corp スパツタリングタ−ゲツト
JPS59200761A (ja) * 1983-04-28 1984-11-14 Toshiba Corp スパツタリングタ−ゲツト支持装置
JPS59208073A (ja) * 1983-05-13 1984-11-26 Fujitsu Ltd スパツタリング用シリサイドタ−ゲツト
JPH0611029B2 (ja) * 1984-03-28 1994-02-09 株式会社日立製作所 スパツタタ−ゲツトおよびスパツタリング方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116835A (ja) * 1984-11-13 1986-06-04 Shinku Yakin Kk Ｌｓｉ又は超ｌｓｉ電極配線材料用スパツタリングタ−ゲツト
JPS61139637A (ja) * 1984-12-12 1986-06-26 Hitachi Metals Ltd スパツタ用タ−ゲツトとその製造方法
JPS61145829A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd モザイク状スパツタリングタ−ゲツトとその製造方法
JPS61145828A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd スパツタリングタ−ゲツトとその製造方法
JPS61272371A (ja) * 1985-05-29 1986-12-02 O C C:Kk スパツタリングタ−ゲツト
JPS6289863A (ja) * 1985-10-16 1987-04-24 Hitachi Metals Ltd スパッター用ターゲット部材およびその製造方法
JPS6289862A (ja) * 1985-10-16 1987-04-24 Hitachi Metals Ltd スパッター用ターゲット部材およびその製造方法
JPS62186511A (ja) * 1986-02-12 1987-08-14 Hitachi Metals Ltd タ−ゲツト部材
JPS63111172A (ja) * 1986-10-29 1988-05-16 Hitachi Metals Ltd タ−ゲツト材の製造方法
JPS63145771A (ja) * 1986-12-10 1988-06-17 Kasei Naoetsu:Kk スパツタリングタ−ゲツト

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150356A (ja) * 1989-11-02 1991-06-26 Hitachi Metals Ltd タングステンまたはモリブデンターゲットおよびその製造方法

Also Published As

Publication number Publication date
KR910007947B1 (ko) 1991-10-04
EP0281141A1 (en) 1988-09-07
DE3854609D1 (de) 1995-11-30
KR880011363A (ko) 1988-10-28
DE3854609T2 (de) 1996-04-25
EP0281141B2 (en) 2000-06-28
DE3854609T3 (de) 2000-11-23
US4842706A (en) 1989-06-27
EP0281141B1 (en) 1995-10-25
JPH0371510B2 (enExample) 1991-11-13

Similar Documents

Publication Publication Date Title
JPS63216966A (ja) スパツタタ−ゲツト
US6797137B2 (en) Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
JP6085531B2 (ja) 組織の均一性が改善された高融点金属プレート
JP2857015B2 (ja) 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
CN101155650A (zh) 溅射靶及制造方法
JP4405606B2 (ja) チタンスパッタリングターゲット及びその製造方法
JP5951599B2 (ja) 高純度Ｎｉスパッタリングターゲットおよびその製造方法
JPH08100255A (ja) 薄膜トランジスタの薄膜形成用スパッタリングターゲット材
JPH10330928A (ja) スパッタリングターゲット材およびその製造方法
JPH0864554A (ja) 薄膜トランジスタの薄膜形成用スパッタリングターゲット材
JPH1150244A (ja) スパッタリングターゲット材およびその製造方法
JP2003171760A (ja) タングステンスパッタリングターゲット
JPH08269698A (ja) スパッタリング用Ｔｉターゲット
JP2003201560A (ja) スパッタリングターゲットおよびその製造方法
JP2901854B2 (ja) 高純度チタニウムスパッタリングターゲット
JP7678496B2 (ja) 白金系スパッタリングターゲット及びその製造方法
JP2019163544A (ja) スパッタリングターゲット、窒化チタン膜、配線層、および半導体素子
JPH0790560A (ja) 高純度チタニウムスパッタリングターゲット
WO2000031316A1 (fr) CIBLE POUR PULVERISATION CATHODIQUE EN ALLIAGE Co-Ti ET PROCEDE DE FABRICATION CORRESPONDANT
JPH04276070A (ja) マグネトロンスパッタリング用ターゲット
JP2000319774A (ja) スパッターリングターゲット材
JPH05255843A (ja) スパッタリング用高純度チタンターゲット
JPH10245670A (ja) 高純度チタニウムスパッタリングターゲット
JP2001303240A (ja) スパッタリングターゲット
JP4286367B2 (ja) スパッタリングターゲット、配線膜および電子部品

Legal Events

Date Code Title Description
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313114

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

Free format text: JAPANESE INTERMEDIATE CODE: R313114

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term