JPS6315475A - 電界効果型半導体装置の製造方法 - Google Patents

電界効果型半導体装置の製造方法

Info

Publication number
JPS6315475A
JPS6315475A JP15916986A JP15916986A JPS6315475A JP S6315475 A JPS6315475 A JP S6315475A JP 15916986 A JP15916986 A JP 15916986A JP 15916986 A JP15916986 A JP 15916986A JP S6315475 A JPS6315475 A JP S6315475A
Authority
JP
Japan
Prior art keywords
resist
recess
pattern
gate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15916986A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260216B2 (enrdf_load_stackoverflow
Inventor
Kinshiro Kosemura
小瀬村　欣司郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15916986A priority Critical patent/JPS6315475A/ja
Publication of JPS6315475A publication Critical patent/JPS6315475A/ja
Publication of JPH0260216B2 publication Critical patent/JPH0260216B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15916986A 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法 Granted JPS6315475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15916986A JPS6315475A (ja) 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15916986A JPS6315475A (ja) 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6315475A true JPS6315475A (ja) 1988-01-22
JPH0260216B2 JPH0260216B2 (enrdf_load_stackoverflow) 1990-12-14

Family

ID=15687786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15916986A Granted JPS6315475A (ja) 1986-07-07 1986-07-07 電界効果型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6315475A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165623A (ja) * 1988-12-20 1990-06-26 Nec Corp 微細電極の形成法
US5240869A (en) * 1990-10-30 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Method for fabricating a field effect transistor
US5470767A (en) * 1992-08-06 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Method of making field effect transistor
US5610090A (en) * 1993-04-27 1997-03-11 Goldstar Co., Ltd. Method of making a FET having a recessed gate structure
US6537865B2 (en) 1998-05-01 2003-03-25 Oki Electric Industry Co., Ltd. Semiconductor device and process of fabricating same
US8338241B2 (en) 2010-12-06 2012-12-25 Electronics And Telecommunications Research Institute Method of manufacturing high frequency device structure
US8722474B2 (en) 2011-12-13 2014-05-13 Electronics And Telecommunications Research Institute Semiconductor device including stepped gate electrode and fabrication method thereof
US8841154B2 (en) 2012-07-11 2014-09-23 Electronics And Telecommunications Research Institute Method of manufacturing field effect type compound semiconductor device
US9634112B2 (en) 2012-12-12 2017-04-25 Electronics And Telecommunications Research Institute Field effect transistor and method of fabricating the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165623A (ja) * 1988-12-20 1990-06-26 Nec Corp 微細電極の形成法
US5240869A (en) * 1990-10-30 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Method for fabricating a field effect transistor
US5470767A (en) * 1992-08-06 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Method of making field effect transistor
US5610090A (en) * 1993-04-27 1997-03-11 Goldstar Co., Ltd. Method of making a FET having a recessed gate structure
US6537865B2 (en) 1998-05-01 2003-03-25 Oki Electric Industry Co., Ltd. Semiconductor device and process of fabricating same
US8338241B2 (en) 2010-12-06 2012-12-25 Electronics And Telecommunications Research Institute Method of manufacturing high frequency device structure
US8722474B2 (en) 2011-12-13 2014-05-13 Electronics And Telecommunications Research Institute Semiconductor device including stepped gate electrode and fabrication method thereof
US8841154B2 (en) 2012-07-11 2014-09-23 Electronics And Telecommunications Research Institute Method of manufacturing field effect type compound semiconductor device
US9634112B2 (en) 2012-12-12 2017-04-25 Electronics And Telecommunications Research Institute Field effect transistor and method of fabricating the same

Also Published As

Publication number Publication date
JPH0260216B2 (enrdf_load_stackoverflow) 1990-12-14

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