JPS63131056A - Fet電極 - Google Patents
Fet電極Info
- Publication number
- JPS63131056A JPS63131056A JP61275250A JP27525086A JPS63131056A JP S63131056 A JPS63131056 A JP S63131056A JP 61275250 A JP61275250 A JP 61275250A JP 27525086 A JP27525086 A JP 27525086A JP S63131056 A JPS63131056 A JP S63131056A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- fet
- carbon
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 34
- 239000010408 film Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000012212 insulator Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 15
- 239000010980 sapphire Substances 0.000 abstract description 15
- 150000002500 ions Chemical class 0.000 abstract description 9
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 abstract description 7
- 229920006254 polymer film Polymers 0.000 abstract description 5
- 238000006116 polymerization reaction Methods 0.000 abstract description 4
- 102000004190 Enzymes Human genes 0.000 abstract description 3
- 108090000790 Enzymes Proteins 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 230000007935 neutral effect Effects 0.000 abstract description 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JEFSTMHERNSDBC-UHFFFAOYSA-N 1,2-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC=CCC1(C)O JEFSTMHERNSDBC-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000008055 phosphate buffer solution Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Thin Film Transistor (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61275250A JPS63131056A (ja) | 1986-11-20 | 1986-11-20 | Fet電極 |
US07/687,214 US5061976A (en) | 1986-11-20 | 1987-11-19 | Fet electrode with carbon gate |
PCT/JP1987/000900 WO1988004049A1 (en) | 1986-11-20 | 1987-11-19 | Fet electrode |
DE3789554T DE3789554T2 (de) | 1986-11-20 | 1987-11-19 | Feldeffektelektrode. |
KR1019880700857A KR900005618B1 (ko) | 1986-11-20 | 1987-11-19 | Fet 전극 |
EP87907678A EP0345347B1 (en) | 1986-11-20 | 1987-11-19 | Fet electrode |
DK403288A DK403288D0 (da) | 1986-11-20 | 1988-07-19 | Fet elektrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61275250A JPS63131056A (ja) | 1986-11-20 | 1986-11-20 | Fet電極 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63131056A true JPS63131056A (ja) | 1988-06-03 |
Family
ID=17552786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61275250A Pending JPS63131056A (ja) | 1986-11-20 | 1986-11-20 | Fet電極 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5061976A (da) |
EP (1) | EP0345347B1 (da) |
JP (1) | JPS63131056A (da) |
KR (1) | KR900005618B1 (da) |
DE (1) | DE3789554T2 (da) |
DK (1) | DK403288D0 (da) |
WO (1) | WO1988004049A1 (da) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6415647A (en) * | 1987-07-09 | 1989-01-19 | Terumo Corp | Ion sensor |
JPS6478146A (en) * | 1987-09-21 | 1989-03-23 | Terumo Corp | Lithium ion sensor |
EP0366566A2 (en) * | 1988-10-27 | 1990-05-02 | Terumo Kabushiki Kaisha | Reference electrode, ion sensor and method of manufacturing the same |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02296141A (ja) * | 1989-05-10 | 1990-12-06 | Terumo Corp | 機能性素子及びそれを備えたfetセンサ |
US5938917A (en) * | 1995-04-05 | 1999-08-17 | The Regents Of The University Of California | Electrodes for measurement of peroxides |
GB9705278D0 (en) * | 1997-03-14 | 1997-04-30 | Aromascan Plc | Gas sensor |
DE19856295C2 (de) * | 1998-02-27 | 2002-06-20 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von Kohlenstoffelektroden und chemischen Feldeffektransistoren sowie dadurch hergestellte Kohlenstoffelektroden und chemische Feldeffektransistoren und deren Verwendung |
KR100366705B1 (ko) * | 2000-05-26 | 2003-01-09 | 삼성에스디아이 주식회사 | 전기 화학 중합을 이용한 탄소나노튜브 에미터 제조 방법 |
TW465055B (en) | 2000-07-20 | 2001-11-21 | Univ Nat Yunlin Sci & Tech | Method and apparatus for measurement of temperature parameter of ISFET using amorphous silicon hydride as sensor membrane |
TW544752B (en) * | 2002-05-20 | 2003-08-01 | Univ Nat Yunlin Sci & Tech | Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof |
TWI241020B (en) * | 2004-03-31 | 2005-10-01 | Univ Nat Yunlin Sci & Tech | Method of manufacturing TiO2 sensing film, ISFET having TiO2 sensing film, and methods and apparatus for measuring the temperature parameter, drift, and hysteresis thereof |
TWI295729B (en) * | 2005-11-01 | 2008-04-11 | Univ Nat Yunlin Sci & Tech | Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems |
DE102012105283A1 (de) * | 2011-06-24 | 2012-12-27 | Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG | Messaufnehmer zur Bestimmung einer einen Gehalt von H+- und/oder OH--Ionen in einem Messmedium repräsentierenden Messgröße |
US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118153A (en) * | 1981-01-14 | 1982-07-22 | Terumo Corp | Ph sensor |
JPS59176662A (ja) * | 1983-03-25 | 1984-10-06 | Sumitomo Electric Ind Ltd | 半導体センサ |
JPS6111652A (ja) * | 1984-06-27 | 1986-01-20 | Sumitomo Electric Ind Ltd | 電界効果型半導体センサ |
JPS61155949A (ja) * | 1984-12-28 | 1986-07-15 | Terumo Corp | pHセンサ− |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU89314A1 (ru) * | 1949-04-23 | 1949-11-30 | П.Я. Мельников | Приспособление дл разравнивани штукатурного намета |
US3598713A (en) * | 1969-06-03 | 1971-08-10 | Corning Glass Works | Potassium ion sensitive electrode |
US3926764A (en) * | 1971-05-19 | 1975-12-16 | Radiometer As | Electrode for potentiometric measurements |
GB1437091A (en) * | 1972-10-02 | 1976-05-26 | Radiometer As | Calcium electrode and membrane and composition for use therein |
US3957612A (en) * | 1974-07-24 | 1976-05-18 | General Electric Company | In vivo specific ion sensor |
US4115209A (en) * | 1974-10-30 | 1978-09-19 | Research Corporation | Method of determining ion activity using coated ion selective electrodes |
US3957613A (en) * | 1974-11-01 | 1976-05-18 | General Electric Company | Miniature probe having multifunctional electrodes for sensing ions and gases |
US4052285A (en) * | 1975-03-20 | 1977-10-04 | National Research Development Corporation | Ion selective electrodes |
JPS5230490A (en) * | 1975-09-03 | 1977-03-08 | Denki Kagaku Keiki Co Ltd | Gas concentration measuring electrode stable in air |
US4280889A (en) * | 1976-03-11 | 1981-07-28 | Honeywell Inc. | Solid state ion responsive and reference electrodes |
US4214968A (en) * | 1978-04-05 | 1980-07-29 | Eastman Kodak Company | Ion-selective electrode |
US4198851A (en) * | 1978-05-22 | 1980-04-22 | University Of Utah | Method and structure for detecting the concentration of oxygen in a substance |
JPS5626250A (en) * | 1979-08-10 | 1981-03-13 | Olympus Optical Co Ltd | Composite chemical sensor |
US4282079A (en) * | 1980-02-13 | 1981-08-04 | Eastman Kodak Company | Planar glass ion-selective electrode |
JPS5763444A (en) * | 1980-10-02 | 1982-04-16 | Kuraray Co Ltd | Fet sensor with organic polymer film |
JPS57142356U (da) * | 1981-02-28 | 1982-09-07 | ||
US4563263A (en) * | 1982-01-15 | 1986-01-07 | Terumo Corporation | Selectively permeable film and ion sensor |
DK158244C (da) * | 1982-03-15 | 1990-09-10 | Radiometer As | Ionselektiv maaleelektrode og fremgangsmaade til fremstilling af denne elektrode |
JPS58167951A (ja) * | 1982-03-29 | 1983-10-04 | Hitachi Ltd | 塩素イオンセンサ |
JPS5917662A (ja) * | 1982-07-21 | 1984-01-28 | Sharp Corp | 電子式キヤツシユレジスタ |
JPS59102154A (ja) * | 1982-12-06 | 1984-06-13 | Olympus Optical Co Ltd | 化学的感応素子 |
US4454007A (en) * | 1983-01-27 | 1984-06-12 | E. I. Du Pont De Nemours And Company | Ion-selective layered sensor and methods of making and using the same |
JPS59164952A (ja) * | 1983-03-11 | 1984-09-18 | Hitachi Ltd | Fetイオンセンサ |
US4561962A (en) * | 1983-04-06 | 1985-12-31 | Fluilogic Systems Oy | Ion-selective electrode and procedure for manufacturing same |
JPS6052759A (ja) * | 1983-08-31 | 1985-03-26 | Terumo Corp | 酸素センサ− |
JPS6073351A (ja) * | 1983-09-30 | 1985-04-25 | Hitachi Ltd | Fet化学センサ用素子 |
NL8400916A (nl) * | 1984-03-22 | 1985-10-16 | Stichting Ct Voor Micro Elektr | Werkwijze voor het vervaardigen van een isfet en een aldus vervaardigde isfet. |
US4549951A (en) * | 1984-09-11 | 1985-10-29 | Sentech Medical Corporation | Ion selective electrode |
US4615954A (en) * | 1984-09-27 | 1986-10-07 | Eltech Systems Corporation | Fast response, high rate, gas diffusion electrode and method of making same |
DE3585915T2 (de) * | 1984-12-28 | 1993-04-15 | Terumo Corp | Ionensensor. |
KR900008847B1 (ko) * | 1985-05-27 | 1990-11-30 | 테루모가부시끼가이샤 | 이온센서 및 그 제조방법 |
DK626986A (da) * | 1985-12-25 | 1987-06-26 | Terumo Corp | Ionsensor |
DE3687123T2 (de) * | 1986-01-24 | 1993-05-13 | Terumo Corp | Ionenempfindlicher fet-fuehler. |
JPS62180263A (ja) * | 1986-02-04 | 1987-08-07 | Terumo Corp | 酸素センサ− |
JPS62277547A (ja) * | 1986-05-26 | 1987-12-02 | Terumo Corp | ガスセンサ− |
US4981570A (en) * | 1986-12-10 | 1991-01-01 | Terumo Kabushiki Kaisha | Ion carrier membrane, and ion sensor having same |
JPH02296141A (ja) * | 1989-05-10 | 1990-12-06 | Terumo Corp | 機能性素子及びそれを備えたfetセンサ |
JP2614002B2 (ja) * | 1992-07-06 | 1997-05-28 | 株式会社日本触媒 | 剥離性基材の製造方法 |
-
1986
- 1986-11-20 JP JP61275250A patent/JPS63131056A/ja active Pending
-
1987
- 1987-11-19 US US07/687,214 patent/US5061976A/en not_active Expired - Lifetime
- 1987-11-19 EP EP87907678A patent/EP0345347B1/en not_active Expired - Lifetime
- 1987-11-19 KR KR1019880700857A patent/KR900005618B1/ko not_active IP Right Cessation
- 1987-11-19 WO PCT/JP1987/000900 patent/WO1988004049A1/ja active IP Right Grant
- 1987-11-19 DE DE3789554T patent/DE3789554T2/de not_active Expired - Fee Related
-
1988
- 1988-07-19 DK DK403288A patent/DK403288D0/da not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118153A (en) * | 1981-01-14 | 1982-07-22 | Terumo Corp | Ph sensor |
JPS59176662A (ja) * | 1983-03-25 | 1984-10-06 | Sumitomo Electric Ind Ltd | 半導体センサ |
JPS6111652A (ja) * | 1984-06-27 | 1986-01-20 | Sumitomo Electric Ind Ltd | 電界効果型半導体センサ |
JPS61155949A (ja) * | 1984-12-28 | 1986-07-15 | Terumo Corp | pHセンサ− |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6415647A (en) * | 1987-07-09 | 1989-01-19 | Terumo Corp | Ion sensor |
WO1989000690A1 (en) * | 1987-07-09 | 1989-01-26 | Terumo Kabushiki Kaisha | Ion sensor |
JPS6478146A (en) * | 1987-09-21 | 1989-03-23 | Terumo Corp | Lithium ion sensor |
EP0366566A2 (en) * | 1988-10-27 | 1990-05-02 | Terumo Kabushiki Kaisha | Reference electrode, ion sensor and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US5061976A (en) | 1991-10-29 |
EP0345347B1 (en) | 1994-04-06 |
DK403288A (da) | 1988-07-19 |
DE3789554T2 (de) | 1994-08-18 |
DE3789554D1 (de) | 1994-05-11 |
WO1988004049A1 (en) | 1988-06-02 |
EP0345347A1 (en) | 1989-12-13 |
EP0345347A4 (en) | 1991-01-09 |
DK403288D0 (da) | 1988-07-19 |
KR900005618B1 (ko) | 1990-07-31 |
KR890700226A (ko) | 1989-03-10 |
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