JPS5763444A - Fet sensor with organic polymer film - Google Patents
Fet sensor with organic polymer filmInfo
- Publication number
- JPS5763444A JPS5763444A JP55138439A JP13843980A JPS5763444A JP S5763444 A JPS5763444 A JP S5763444A JP 55138439 A JP55138439 A JP 55138439A JP 13843980 A JP13843980 A JP 13843980A JP S5763444 A JPS5763444 A JP S5763444A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic polymer
- metal chromium
- film
- chromium layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Abstract
PURPOSE:To improve water-resisting property, by a method wherein a metal chromium layer is provided onto a gate insulation layer and then organic polymer is provided thereon by means of coating. CONSTITUTION:A metal chrominum layer is provided by means of evaporation or spattering on an FET gate surface which is coated with an insulation film of silicon nitride, silicon dioxide, alumina, tantalum oxide or the like. A film of organic polymer is formed on the metal chromium layer by means of dipping, spattering or polymerization. By providing the metal chromium layer between the FET gate insulation film and the organic polymer film as above described, separation of the organic polymer film and the gate insulation film is prevented. For example, a metal chromium layer is provided on a gate insulation layer of silicon nitride. Crown compound represented by formula and styrene are copolymerized into polymer (crown compound content 20%) and, using the polymer of one part in weight and polyvinyl chloride of 100pts. as a plasticizer, dioctyl adipate of 100pts. is dissolved in cyclo hexane and applied onto the metal chromium layer thereby the formed layer is stable even after dipping in water for one month.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55138439A JPS5763444A (en) | 1980-10-02 | 1980-10-02 | Fet sensor with organic polymer film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55138439A JPS5763444A (en) | 1980-10-02 | 1980-10-02 | Fet sensor with organic polymer film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5763444A true JPS5763444A (en) | 1982-04-16 |
Family
ID=15222006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55138439A Pending JPS5763444A (en) | 1980-10-02 | 1980-10-02 | Fet sensor with organic polymer film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5763444A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839020A (en) * | 1986-05-26 | 1989-06-13 | Terumo Kabushiki Kaisha | Gas sensor |
EP0345347A1 (en) * | 1986-11-20 | 1989-12-13 | Terumo Kabushiki Kaisha | Fet electrode |
US4968400A (en) * | 1986-11-20 | 1990-11-06 | Terumo Kabushiki Kaisha | Enzyme sensor |
US5192417A (en) * | 1987-09-21 | 1993-03-09 | Terumo Kabushiki Kaisha | Lithium ion sensor |
-
1980
- 1980-10-02 JP JP55138439A patent/JPS5763444A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839020A (en) * | 1986-05-26 | 1989-06-13 | Terumo Kabushiki Kaisha | Gas sensor |
EP0345347A1 (en) * | 1986-11-20 | 1989-12-13 | Terumo Kabushiki Kaisha | Fet electrode |
US4968400A (en) * | 1986-11-20 | 1990-11-06 | Terumo Kabushiki Kaisha | Enzyme sensor |
EP0345347A4 (en) * | 1986-11-20 | 1991-01-09 | Terumo Kabushiki Kaisha | Fet electrode |
US5061976A (en) * | 1986-11-20 | 1991-10-29 | Terumo Kabushiki Kaisha | Fet electrode with carbon gate |
US5192417A (en) * | 1987-09-21 | 1993-03-09 | Terumo Kabushiki Kaisha | Lithium ion sensor |
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