JPS6273667A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法Info
- Publication number
- JPS6273667A JPS6273667A JP61147979A JP14797986A JPS6273667A JP S6273667 A JPS6273667 A JP S6273667A JP 61147979 A JP61147979 A JP 61147979A JP 14797986 A JP14797986 A JP 14797986A JP S6273667 A JPS6273667 A JP S6273667A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- layer
- polycrystalline silicon
- thickness
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 36
- 150000004767 nitrides Chemical class 0.000 claims description 34
- 238000001312 dry etching Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- -1 Arsenic ions Chemical class 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000009279 wet oxidation reaction Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- BMSYAGRCQOYYMZ-UHFFFAOYSA-N [As].[As] Chemical compound [As].[As] BMSYAGRCQOYYMZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/011—Bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/124—Polycrystalline emitter
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850005633A KR880000483B1 (ko) | 1985-08-05 | 1985-08-05 | 반도체소자의 제조방법 |
| KR5633/85 | 1985-08-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6273667A true JPS6273667A (ja) | 1987-04-04 |
| JPH0482180B2 JPH0482180B2 (ko) | 1992-12-25 |
Family
ID=19242148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61147979A Granted JPS6273667A (ja) | 1985-08-05 | 1986-06-24 | 半導体素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4686762A (ko) |
| JP (1) | JPS6273667A (ko) |
| KR (1) | KR880000483B1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4812417A (en) * | 1986-07-30 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Method of making self aligned external and active base regions in I.C. processing |
| US5114867A (en) * | 1987-07-15 | 1992-05-19 | Rockwell International Corporation | Sub-micron bipolar devices with method for forming sub-micron contacts |
| KR890003827B1 (ko) * | 1987-07-25 | 1989-10-05 | 재단법인 한국전자통신연구소 | 고속 고집적 반도체소자(Bicmos)의 제조방법 |
| JP3469251B2 (ja) * | 1990-02-14 | 2003-11-25 | 株式会社東芝 | 半導体装置の製造方法 |
| US5039625A (en) * | 1990-04-27 | 1991-08-13 | Mcnc | Maximum areal density recessed oxide isolation (MADROX) process |
| KR920007124A (ko) * | 1990-09-04 | 1992-04-28 | 김광호 | 폴리 에미터 바이폴라 트랜지스터의 제조방법 |
| KR100327329B1 (ko) * | 1998-12-11 | 2002-07-04 | 윤종용 | 저압하의실리콘산화막및산질화막형성방법 |
-
1985
- 1985-08-05 KR KR1019850005633A patent/KR880000483B1/ko not_active IP Right Cessation
-
1986
- 1986-06-24 JP JP61147979A patent/JPS6273667A/ja active Granted
- 1986-07-23 US US06/889,491 patent/US4686762A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR880000483B1 (ko) | 1988-04-07 |
| US4686762A (en) | 1987-08-18 |
| KR870002663A (ko) | 1987-04-06 |
| JPH0482180B2 (ko) | 1992-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0180325B1 (ko) | 얇은 베이스영역에 누설전류가 흐르지 않는 바이폴라 트랜지스터를 갖는 반도체장치 및 그 제조방법 | |
| JP2629644B2 (ja) | 半導体装置の製造方法 | |
| JPH0252422B2 (ko) | ||
| JPS6252963A (ja) | バイポ−ラトランジスタの製造方法 | |
| KR100321889B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| JPS6273667A (ja) | 半導体素子の製造方法 | |
| JPH0193159A (ja) | ＢｉＣＭＯＳ素子の製造方法 | |
| JPH0465528B2 (ko) | ||
| JP2842042B2 (ja) | 半導体装置 | |
| KR100216510B1 (ko) | 트렌치를 이용한 바이폴라 트랜지스터의 컬렉터 형성방법 | |
| KR100275537B1 (ko) | 컬렉터 단결정 박막의 과성장을 이용한 쌍극자 트랜지스터 제조방법 | |
| JP2763105B2 (ja) | 半導体装置の製造方法 | |
| JP2723539B2 (ja) | マスタースライス型半導体装置 | |
| KR0161200B1 (ko) | 바이폴러 트랜지스터의 제조방법 | |
| JP2532384B2 (ja) | バイポ−ラ・トランジスタとその製法 | |
| JP2729870B2 (ja) | 可変容量ダイオードとその製造方法 | |
| JPH0433343A (ja) | バイポーラ型半導体装置およびその製造方法 | |
| KR900000827B1 (ko) | 반도체 장치 제조방법 | |
| JP3131986B2 (ja) | バイポーラトランジスタ | |
| JP2892436B2 (ja) | 半導体装置の製造方法 | |
| JP2001068478A (ja) | 半導体装置およびその製造方法 | |
| JPH0451981B2 (ko) | ||
| JPH0327530A (ja) | バイポーラトランジスタの製造方法 | |
| JPS62298170A (ja) | 半導体装置の製造方法 | |
| JPS60257572A (ja) | 半導体装置の製造方法 |