JPS6248393B2 - - Google Patents
Info
- Publication number
- JPS6248393B2 JPS6248393B2 JP56064050A JP6405081A JPS6248393B2 JP S6248393 B2 JPS6248393 B2 JP S6248393B2 JP 56064050 A JP56064050 A JP 56064050A JP 6405081 A JP6405081 A JP 6405081A JP S6248393 B2 JPS6248393 B2 JP S6248393B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- silicon compound
- semiconductor substrate
- compound
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000003377 silicon compounds Chemical class 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6405081A JPS57180184A (en) | 1981-04-30 | 1981-04-30 | Manufacturing method for fet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6405081A JPS57180184A (en) | 1981-04-30 | 1981-04-30 | Manufacturing method for fet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57180184A JPS57180184A (en) | 1982-11-06 |
| JPS6248393B2 true JPS6248393B2 (de) | 1987-10-13 |
Family
ID=13246873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6405081A Granted JPS57180184A (en) | 1981-04-30 | 1981-04-30 | Manufacturing method for fet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180184A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219765A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | シヨツトキ−障壁電極 |
| JPS61220376A (ja) * | 1985-03-26 | 1986-09-30 | Sumitomo Electric Ind Ltd | ショットキゲート電界効果トランジスタの製造方法 |
| EP0271346B1 (de) * | 1986-12-11 | 1995-05-03 | Gte Laboratories Incorporated | Transistor mit Zusammensetzung aus Halbleitermaterial und aus leitendem Material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5194775A (de) * | 1975-02-19 | 1976-08-19 | ||
| JPS5197383A (de) * | 1975-02-21 | 1976-08-26 |
-
1981
- 1981-04-30 JP JP6405081A patent/JPS57180184A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5194775A (de) * | 1975-02-19 | 1976-08-19 | ||
| JPS5197383A (de) * | 1975-02-21 | 1976-08-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57180184A (en) | 1982-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4566021A (en) | Semiconductor device | |
| US5536967A (en) | Semiconductor device including Schottky gate of silicide and method for the manufacture of the same | |
| JPS6248393B2 (de) | ||
| US4586063A (en) | Schottky barrier gate FET including tungsten-aluminum alloy | |
| US5200349A (en) | Semiconductor device including schotky gate of silicide and method for the manufacture of the same | |
| JPS5837967A (ja) | Ｍｉｓ型半導体装置の製造方法 | |
| JPS60169169A (ja) | 半導体装置の製造方法 | |
| JPS627165A (ja) | 半導体装置の製造方法 | |
| EP0201713A1 (de) | Verfahren zum Herstellen der Tor-Elektrode eines FET durch schräges Aufdampfen | |
| JPS6160591B2 (de) | ||
| JPH063814B2 (ja) | 半導体装置の製造方法 | |
| JP3072335B2 (ja) | 電界効果トランジスタの製造方法 | |
| JP2835398B2 (ja) | 電界効果トランジスタの製法 | |
| JPH0353774B2 (de) | ||
| JP2731194B2 (ja) | 化合物半導体装置の製造方法 | |
| JPH0810706B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPS6092666A (ja) | Ｍｉｓトランジスタの製造方法 | |
| DE1614356C3 (de) | Verfahren zur Herstellung eines nleitenden Kanals zwischen den n-leitenden Quelle- und Senkegebieten eines Feldeffekttransistors | |
| JPS6068662A (ja) | 半導体装置およびその製造方法 | |
| JPS5816566A (ja) | 半導体装置およびその製造方法 | |
| JPH03289142A (ja) | 化合物半導体装置の製造方法 | |
| JPS6323370A (ja) | 半導体装置の製造方法 | |
| JPS6086871A (ja) | 電界効果トランジスタの製造方法 | |
| JPS6323369A (ja) | 半導体装置の製造方法 | |
| JPH0472385B2 (de) |