JPS57180184A - Manufacturing method for fet - Google Patents
Manufacturing method for fetInfo
- Publication number
- JPS57180184A JPS57180184A JP6405081A JP6405081A JPS57180184A JP S57180184 A JPS57180184 A JP S57180184A JP 6405081 A JP6405081 A JP 6405081A JP 6405081 A JP6405081 A JP 6405081A JP S57180184 A JPS57180184 A JP S57180184A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- taper type
- gate
- exemplifiedly
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6405081A JPS57180184A (en) | 1981-04-30 | 1981-04-30 | Manufacturing method for fet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6405081A JPS57180184A (en) | 1981-04-30 | 1981-04-30 | Manufacturing method for fet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57180184A true JPS57180184A (en) | 1982-11-06 |
| JPS6248393B2 JPS6248393B2 (ja) | 1987-10-13 |
Family
ID=13246873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6405081A Granted JPS57180184A (en) | 1981-04-30 | 1981-04-30 | Manufacturing method for fet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180184A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219765A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | シヨツトキ−障壁電極 |
| JPS61220376A (ja) * | 1985-03-26 | 1986-09-30 | Sumitomo Electric Ind Ltd | ショットキゲート電界効果トランジスタの製造方法 |
| JPS63160375A (ja) * | 1986-12-11 | 1988-07-04 | ジー・ティー・イー・ラボラトリーズ・インコーポレイテッド | 電界効果トランジスタ及びその製造方法並びに半導体デバイスの製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5194775A (ja) * | 1975-02-19 | 1976-08-19 | ||
| JPS5197383A (ja) * | 1975-02-21 | 1976-08-26 |
-
1981
- 1981-04-30 JP JP6405081A patent/JPS57180184A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5194775A (ja) * | 1975-02-19 | 1976-08-19 | ||
| JPS5197383A (ja) * | 1975-02-21 | 1976-08-26 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219765A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | シヨツトキ−障壁電極 |
| JPS61220376A (ja) * | 1985-03-26 | 1986-09-30 | Sumitomo Electric Ind Ltd | ショットキゲート電界効果トランジスタの製造方法 |
| JPH0329301B2 (ja) * | 1985-03-26 | 1991-04-23 | Sumitomo Electric Industries | |
| JPS63160375A (ja) * | 1986-12-11 | 1988-07-04 | ジー・ティー・イー・ラボラトリーズ・インコーポレイテッド | 電界効果トランジスタ及びその製造方法並びに半導体デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248393B2 (ja) | 1987-10-13 |
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