JPS6244440B2 - - Google Patents

Info

Publication number
JPS6244440B2
JPS6244440B2 JP18051181A JP18051181A JPS6244440B2 JP S6244440 B2 JPS6244440 B2 JP S6244440B2 JP 18051181 A JP18051181 A JP 18051181A JP 18051181 A JP18051181 A JP 18051181A JP S6244440 B2 JPS6244440 B2 JP S6244440B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
active layer
grooves
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18051181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5882587A (ja
Inventor
Mitsuhiro Kitamura
Ikuo Mito
Kenichi Kobayashi
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP18051181A priority Critical patent/JPS5882587A/ja
Publication of JPS5882587A publication Critical patent/JPS5882587A/ja
Publication of JPS6244440B2 publication Critical patent/JPS6244440B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
JP18051181A 1981-11-11 1981-11-11 埋め込みヘテロ構造半導体レ−ザの製造方法 Granted JPS5882587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18051181A JPS5882587A (ja) 1981-11-11 1981-11-11 埋め込みヘテロ構造半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18051181A JPS5882587A (ja) 1981-11-11 1981-11-11 埋め込みヘテロ構造半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS5882587A JPS5882587A (ja) 1983-05-18
JPS6244440B2 true JPS6244440B2 (ko) 1987-09-21

Family

ID=16084522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18051181A Granted JPS5882587A (ja) 1981-11-11 1981-11-11 埋め込みヘテロ構造半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS5882587A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017977A (ja) * 1983-07-11 1985-01-29 Nec Corp 半導体レ−ザダイオ−ド
US4870468A (en) * 1986-09-12 1989-09-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
JP4850886B2 (ja) * 2008-10-21 2012-01-11 リンナイ株式会社 ガス通路のフィルタ取付構造

Also Published As

Publication number Publication date
JPS5882587A (ja) 1983-05-18

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