JPS6229894B2 - - Google Patents

Info

Publication number
JPS6229894B2
JPS6229894B2 JP56142530A JP14253081A JPS6229894B2 JP S6229894 B2 JPS6229894 B2 JP S6229894B2 JP 56142530 A JP56142530 A JP 56142530A JP 14253081 A JP14253081 A JP 14253081A JP S6229894 B2 JPS6229894 B2 JP S6229894B2
Authority
JP
Japan
Prior art keywords
laser beam
sink
semiconductor
substrate
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56142530A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5844726A (ja
Inventor
Yasushi Sawada
Toshiro Karaki
Junji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56142530A priority Critical patent/JPS5844726A/ja
Publication of JPS5844726A publication Critical patent/JPS5844726A/ja
Publication of JPS6229894B2 publication Critical patent/JPS6229894B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

Landscapes

  • Semiconductor Lasers (AREA)
JP56142530A 1981-09-11 1981-09-11 ゲッタリング方法 Granted JPS5844726A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56142530A JPS5844726A (ja) 1981-09-11 1981-09-11 ゲッタリング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56142530A JPS5844726A (ja) 1981-09-11 1981-09-11 ゲッタリング方法

Publications (2)

Publication Number Publication Date
JPS5844726A JPS5844726A (ja) 1983-03-15
JPS6229894B2 true JPS6229894B2 (https=) 1987-06-29

Family

ID=15317497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56142530A Granted JPS5844726A (ja) 1981-09-11 1981-09-11 ゲッタリング方法

Country Status (1)

Country Link
JP (1) JPS5844726A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261192A (ja) * 2005-03-15 2006-09-28 Fujitsu Ltd シリコンウェーハの処理方法及び該方法を実施する装置
JP5365063B2 (ja) * 2008-05-07 2013-12-11 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP2010098105A (ja) * 2008-10-16 2010-04-30 Sumco Corp 固体撮像素子用エピタキシャル基板の製造方法、固体撮像素子用エピタキシャル基板
JP5544734B2 (ja) * 2009-03-23 2014-07-09 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、エピタキシャルウェーハの製造方法、および固体撮像素子の製造方法
WO2010044279A1 (ja) * 2008-10-16 2010-04-22 株式会社Sumco ゲッタリングシンクを有する固体撮像素子用エピタキシャル基板、半導体デバイス、裏面照射型固体撮像素子およびそれらの製造方法
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (https=) * 1971-08-11 1973-04-04
JPS566432A (en) * 1979-06-27 1981-01-23 Sony Corp Treatment of semiconductor substrate
JPS5618480A (en) * 1979-07-23 1981-02-21 Toshiba Corp Manufacture of display device
JPS5618430A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
JPS56105641A (en) * 1980-01-25 1981-08-22 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5844726A (ja) 1983-03-15

Similar Documents

Publication Publication Date Title
TWI637433B (zh) 使用雷射處理及溫度引起之應力的組合式晶圓製造方法
JP2006305586A (ja) 板状体切断方法並びにレーザ加工装置
KR870011666A (ko) 바아 코우드 패턴을 형성시킨 반도체 웨이퍼의 식별방법 및 반도체 장치의 제조방법
JPS641045B2 (https=)
JPS6229894B2 (https=)
JPH0731395B2 (ja) 光マスクとその製造方法
JPS58170037A (ja) 配線の切断方法及び切断装置
JPS6267834A (ja) レ−ザ処理方法
JPS61116820A (ja) 半導体のアニ−ル方法
JPS59117274A (ja) 太陽電池の製造方法
JPS61226916A (ja) 多結晶またはアモルファスの半導体材料を単結晶半導体材料に転化する方法
JP2022128560A (ja) 半導体チップの製造方法
JPS5837934A (ja) 半導体装置の製造方法
JPS5429573A (en) Fine machining method of semiconductor
JPS58189850A (ja) 光記録媒体およびその製造方法
JP2890617B2 (ja) 薄膜の形成方法
JPS58105579A (ja) 表面処理方法
JP3027642B2 (ja) 化合物半導体の応力低減法
JPS58124289A (ja) 半導体レ−ザパツケ−ジ
JPH01143274A (ja) 集積型光発電素子の製造方法
JPH03253035A (ja) 半導体ウェハーの裏面歪場形成装置
JPS6360519A (ja) アニ−ル方法
JPS6114727A (ja) 半導体装置の製造方法
JPH06302531A (ja) レーザードーピング方法
JPS6170714A (ja) シリコン膜再結晶化方法