JPWO2025191681A5 - - Google Patents

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Publication number
JPWO2025191681A5
JPWO2025191681A5 JP2024539066A JP2024539066A JPWO2025191681A5 JP WO2025191681 A5 JPWO2025191681 A5 JP WO2025191681A5 JP 2024539066 A JP2024539066 A JP 2024539066A JP 2024539066 A JP2024539066 A JP 2024539066A JP WO2025191681 A5 JPWO2025191681 A5 JP WO2025191681A5
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Japan
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region
silicon wafer
main surface
hydrogen
semiconductor device
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JP2024539066A
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English (en)
Japanese (ja)
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JP7584713B1 (ja
JPWO2025191681A1 (https=
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Priority claimed from PCT/JP2024/009540 external-priority patent/WO2025191681A1/ja
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Publication of JP7584713B1 publication Critical patent/JP7584713B1/ja
Publication of JPWO2025191681A1 publication Critical patent/JPWO2025191681A1/ja
Publication of JPWO2025191681A5 publication Critical patent/JPWO2025191681A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2024539066A 2024-03-12 2024-03-12 パワー半導体装置の製造方法 Active JP7584713B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/009540 WO2025191681A1 (ja) 2024-03-12 2024-03-12 パワー半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP7584713B1 JP7584713B1 (ja) 2024-11-15
JPWO2025191681A1 JPWO2025191681A1 (https=) 2025-09-18
JPWO2025191681A5 true JPWO2025191681A5 (https=) 2026-02-18

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ID=93432458

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Application Number Title Priority Date Filing Date
JP2024539066A Active JP7584713B1 (ja) 2024-03-12 2024-03-12 パワー半導体装置の製造方法

Country Status (2)

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JP (1) JP7584713B1 (https=)
WO (1) WO2025191681A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105814694B (zh) * 2014-10-03 2019-03-08 富士电机株式会社 半导体装置以及半导体装置的制造方法
JP7528628B2 (ja) * 2020-08-20 2024-08-06 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7729171B2 (ja) * 2021-10-21 2025-08-26 三菱電機株式会社 半導体装置および半導体装置の製造方法

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