JPWO2025191681A1 - - Google Patents
Info
- Publication number
- JPWO2025191681A1 JPWO2025191681A1 JP2024539066A JP2024539066A JPWO2025191681A1 JP WO2025191681 A1 JPWO2025191681 A1 JP WO2025191681A1 JP 2024539066 A JP2024539066 A JP 2024539066A JP 2024539066 A JP2024539066 A JP 2024539066A JP WO2025191681 A1 JPWO2025191681 A1 JP WO2025191681A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2024/009540 WO2025191681A1 (ja) | 2024-03-12 | 2024-03-12 | パワー半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7584713B1 JP7584713B1 (ja) | 2024-11-15 |
| JPWO2025191681A1 true JPWO2025191681A1 (https=) | 2025-09-18 |
| JPWO2025191681A5 JPWO2025191681A5 (https=) | 2026-02-18 |
Family
ID=93432458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024539066A Active JP7584713B1 (ja) | 2024-03-12 | 2024-03-12 | パワー半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7584713B1 (https=) |
| WO (1) | WO2025191681A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105814694B (zh) * | 2014-10-03 | 2019-03-08 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
| JP7528628B2 (ja) * | 2020-08-20 | 2024-08-06 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7729171B2 (ja) * | 2021-10-21 | 2025-08-26 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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2024
- 2024-03-12 JP JP2024539066A patent/JP7584713B1/ja active Active
- 2024-03-12 WO PCT/JP2024/009540 patent/WO2025191681A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP7584713B1 (ja) | 2024-11-15 |
| WO2025191681A1 (ja) | 2025-09-18 |
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